Scribd
Upload
154 views2 pages

Assi1 (Eec201)

The document contains an electronics engineering assignment with 4 questions. Q1 defines key terms related to PN junctions like depletion layer, barrier potential, and asks to draw and explain the V-I characteristics of a PN diode. Q2 explains ideal and practical diodes, their applications, and differences between N-type and P-type semiconductors. Q3 calculates current and voltages in diode circuits. Q4 explains half wave and full wave rectifiers, and calculates no load voltage, load voltage, and regulation for a full wave rectifier.

Uploaded by

Harsh Tiwari
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOC, PDF, TXT or read online on Scribd
154 views2 pages

Assi1 (Eec201)

The document contains an electronics engineering assignment with 4 questions. Q1 defines key terms related to PN junctions like depletion layer, barrier potential, and asks to draw and explain the V-I characteristics of a PN diode. Q2 explains ideal and practical diodes, their applications, and differences between N-type and P-type semiconductors. Q3 calculates current and voltages in diode circuits. Q4 explains half wave and full wave rectifiers, and calculates no load voltage, load voltage, and regulation for a full wave rectifier.

Uploaded by

Harsh Tiwari
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOC, PDF, TXT or read online on Scribd

JSS ACADEMY OF TECHNICAL EDUCATION, NOIDA

Subject: Electronics Engineering (EEC201)


Assignment 1(submit on 17.2.2011)

Q1. (a) Define and explain the following terms in respect of PN Junction.
(i) Depletion Layer (ii) Barrier Potential (iii) AC&DC Resistance
(vi) PIV (v) Ripple Factor (VI) Diffusition &Transition Capacitance
(b) Draw and explain the V-I characteristics of PN Diode with the help of current
Equation.

Q2. (a) Explain about Ideal and Practical Diode with proper symbol &its
characteristics.
(b) List the applications of PN diode.
( c) Explain the difference of N-type and P-type Extrinsic Semiconductor.

Q3. (a) Calculate Forward Current IF for the silicon diode with dynamic resistance
Rd=0.25Ω in the circuit below:
(Given: si diode VT=0.7v) [Ans :IF =78.04mA]
Fig1

R1 1B

10k

V1 D1
1.5dc DIODE

(b )Determine Vo and I for the following Circuit: (Given: (D1) Si diode=0.7v,


(D2) Ge Diode VT=0.2v)
[Ans: I=9.8mA, Vo=9.8V]
[Hint: Since Ge Diode VT=0.2V, so it will conduct first.]

D 1

I=?
D 2
D IO D E
V 1 I=?
10V=Vi R 1
1k
D IO D E 1B

Fig:2
(c) Find VA &I. (D1&D2=Si Diode)
[Ans:VA=13.6V,I=1.924mA]

D 1 D 2

Va=?
V1 Si si
15V=Vi R 1
7K

Fig3

Q4. (a)Explain the working of Half Wave &Full Wave Rectifier with diagram &
Waveforms.

(b) A full wave Rectifier uses a diode with forward resistance of 1Ω. The
transformer secondary is centre tapped with output 10-0-10 V RMS and has resistance
of 5Ω for each half section.

Calculate: (i) No Load DC Voltage.


(ii)DC Output Voltage At 100mA
(iii)% Regulation at 100mA.

[Ans: (i) EDC (NL)=9.0031V (ii) EDC(On Load)=8.4031V (iii) 7.14%]

You might also like