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Darlington: Silicon NPN Triple Diffused Planar Transistor

This document provides specifications and characteristics for a silicon NPN triple diffused planar transistor (2SD2438). It includes maximum ratings, electrical characteristics like current gain and saturation voltage, switching characteristics, and thermal properties like thermal resistance. Graphs show characteristics like current gain and cutoff frequency varying with collector current and temperature.

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silvertronic
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186 views1 page

Darlington: Silicon NPN Triple Diffused Planar Transistor

This document provides specifications and characteristics for a silicon NPN triple diffused planar transistor (2SD2438). It includes maximum ratings, electrical characteristics like current gain and saturation voltage, switching characteristics, and thermal properties like thermal resistance. Graphs show characteristics like current gain and cutoff frequency varying with collector current and temperature.

Uploaded by

silvertronic
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Equivalent circuit

2SD2438

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1587)

Application : Audio, Series Regulator and General Purpose

ICBO

VCB=160V

100max

IEBO

VEB=5V

100max

V(BR)CEO

IC=30mA

150min

hFE

VCE=4V, IC=6A

5000min

IC=6A, IB=6mA

2.5max

150

VEBO
IC

PC

75(Tc=25C)

VBE(sat)

IC=6A, IB=6mA

3.0max

Tj

150

fT

VCE=12V, IE=1A

80typ

MHz

55 to +150

COB

VCB=10V, f=1MHz

85typ

pF

1.75

16.2

Tstg

3.0

VCE(sat)

1.05 +0.2
-0.1
5.450.1

Typical Switching Characteristics (Common Emitter)


RL
()

IC
(A)

VBB1
(V)

VBB2
(V)

IB1
( mA)

IB2
(mA)

ton
(s)

tstg
(s)

tf
(s)

60

10

10

0.6typ

10.0typ

0.9typ

I B =0.3mA

I C =4A

0.2

0.5

Collector-Emitter Voltage V C E (V)

10

50

100 200

h FE I C Temperature Characteristics (Typical)


(V C E =4V)

40000

50000

Typ
10000
5000

Transient Thermal Resistance

DC C urrent G ain h FE

125C

25C

10000
5000

30C

1000
1

500
0.2

0.5

Collector Current I C (A)

2.5

j-a t Characteristics
4

0.5

0.2

10

50 100

500 1000 2000

Time t(ms)

Collector Current I C (A)

f T I E Characteristics (Typical)

Safe Operating Area (Single Pulse)

P c T a Derating

(V C E =12V)
120

80

20
10
m

Collect or Cur ren t I C (A)


Emitter Current I E (A)

10

50

100

Collector-Emitter Voltage V C E (V)

200

40

nk

si

0.1

0.05
3

at

0.1
0
0.02

he

Without Heatsink
Natural Cooling

20

ite

40

1
0.5

60

fin

60

In

80

0m

ith

DC

Typ

M aximum Power Dissipa ti on P C (W)

10

100

10
Cut- off F req uenc y f T (MH Z )

DC C urrent G ain h FE

Base-Emittor Voltage V B E (V)

(V C E =4V)

0.5

Base Current I B (mA)

h FE I C Characteristics (Typical)

1000
02

4
)
Temp
)

I C =6A

Temp

I C =8A

mp)

0.5mA

(Case

25C

0.8 mA

(V C E =4V)

e Te

1.0m A

Weight : Approx 6.5g


a. Type No.
b. Lot No.

(Cas

1. 3m A

125C

Collector Current I C (A)

1.5m

3.35

1.5

I C V BE Temperature Characteristics (Typical)

j- a ( C/W)

5m
2. A
0m
A

2.

10mA

1.

Collector-Emitter Saturation Voltage V C E (sa t) (V )

Collector Current I C (A)

4.4

V CE ( sat ) I B Characteristics (Typical)

A
8m

0.65 +0.2
-0.1

5.450.1

1.5

VCC
(V)

0.8

2.15

hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)

I C V CE Characteristics (Typical)

3.45 0.2

3.30.2

a
b

IB

5.50.2

5.5

VCEO

15.60.2

(Case

23.00.3

160

0.80.2

Unit

VCBO

External Dimensions FM100(TO3PF)

(Ta=25C)

3.3

Symbol

2SD2438

Unit

1.6

Electrical Characteristics
Conditions

2SD2438

Symbol

30C

Absolute maximum ratings (Ta=25C)

(7 0 )

9.50.2

Darlington

20

3.5
0

Without Heatsink
0

50

100

150

Ambient Temperature Ta(C)

151

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