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Silicon NPN Triple Diffused Planar Transistor: (Complement To Type 2SA1492)

This document provides specifications for a silicon NPN triple diffused planar transistor (2SC3856). Key parameters specified include maximum ratings, electrical characteristics like current gain and saturation voltage, switching characteristics, and thermal properties. Graphs illustrate characteristics like current gain, saturation voltage, and power dissipation in relation to variables like current, voltage, and temperature.

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68 views1 page

Silicon NPN Triple Diffused Planar Transistor: (Complement To Type 2SA1492)

This document provides specifications for a silicon NPN triple diffused planar transistor (2SC3856). Key parameters specified include maximum ratings, electrical characteristics like current gain and saturation voltage, switching characteristics, and thermal properties. Graphs illustrate characteristics like current gain, saturation voltage, and power dissipation in relation to variables like current, voltage, and temperature.

Uploaded by

eu
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

2SC3856

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492)

Conditions

2SC3856

Unit

ICBO

VCB=200V

100max

VCEO

180

IEBO

VEB=6V

100max

IC=50mA

180min

V(BR)CEO

IC

15

hFE

VCE=4V, IC=3A

50min

IB

VCE(sat)

IC=5A, IB=0.5A

2.0max

PC

130(Tc=25C)

fT

VCE=12V, IE=0.5A

20typ

MHz

Tj

150

COB

VCB=10V, f=1MHz

300typ

pF

55 to +150

hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)

19.90.3

VEBO

20.0min

VBB1
(V)

VBB2
(V)

IB1
(A)

IB2
(A)

ton
(s)

tstg
(s)

tf
(s)

40

10

10

0.5typ

1.8typ

0.6typ

0.5

1.0

1.5

(V C E =4V)
200

100
25C

50

30C

20
0.02

10 15

Collector Current I C (A)

0.1

0.5

f T I E Characteristics (Typical)

10 15

10

Typ

0.1

10

P c T a Derating

he
at
si
nk

Without Heatsink
Natural Cooling

ite

1
0.5

100

fin

Collect or Cur ren t I C (A)

130
s

In

10

1000 2000

ith

20

0m

100
Time t(ms)

10

3m

Temp)

0.5

40

10

(Case

Safe Operating Area (Single Pulse)

30

Collector Current I C (A)

(V C E =12V)

mp)
e Te

(Cas

j-a t Characteristics

Ma xim um Powe r Dissipat io n P C (W)

Transient Thermal Resistance

DC Curr ent Gain h FE

Typ

50

Cu t-of f Fr equen cy f T (MH Z )

D C Cur r ent Gai n h F E

125C

0.5

Base-Emittor Voltage V B E (V)

h FE I C Temperature Characteristics (Typical)

300

0.1

2.0

Base Current I B (A)

h FE I C Characteristics (Typical)
(V C E =4V)
www.DataSheet4U.com

20
0.02

mp)

I C =10A
5A

Collector-Emitter Voltage V C E (V)

100

30C

I B =20mA

e Te

50mA

10

Cas

100 mA

C (

20 0m A

10

(V CE =4V)

125

1.4

15

Collector Current I C (A)

300m

5.450.1
C

I C V BE Temperature Characteristics (Typical)

j - a (C /W)

0.65 +0.2
-0.1

Weight : Approx 6.0g


a. Type No.
b. Lot No.

V CE ( sat ) I B Characteristics (Typical)


Collector-Emitter Saturation Voltage V CE(s a t) (V )

1A
Collector Current I C (A)

70

m
00

2
3

IC
(A)

3.20.1

5.450.1

RL
()

0m

2.00.1

1.05 +0.2
-0.1

VCC
(V)

I C V CE Characteristics (Typical)

4.80.2

Typical Switching Characteristics (Common Emitter)

15

25C

Tstg

15.60.4
9.6

1.8

Unit

200

2.0

2SC3856

VCBO

5.00.2

Symbol

External Dimensions MT-100(TO3P)

(Ta=25C)

4.0

Symbol

Electrical Characteristics

4.0max

Absolute maximum ratings (Ta=25C)

Application : Audio and General Purpose

50

Without Heatsink
0
0.02

0.1

1
Emitter Current I E (A)

78

10

0.1

10

100

Collector-Emitter Voltage V C E (V)

200

3.5
0

25

50

75

100

125

Ambient Temperature Ta(C)

150

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