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NPN Silicon Transistor STD1766 Datasheet

This document provides specifications for an NPN silicon transistor, the STD1766. It is described as a medium power amplifier with a collector dissipation of 2W when mounted on a ceramic substrate. Key features include a low collector saturation voltage of 0.5V typical and compatibility with the complementary transistor STB1188. Electrical characteristic data is provided, including breakdown voltages, current ratings, gain, transition frequency and capacitance. Dimensional drawings of the SOT-89 package and pin connections are also included. Electrical characteristic curves illustrate properties like collector current vs base-emitter voltage, collector current vs collector-emitter voltage, and gain.

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85 views4 pages

NPN Silicon Transistor STD1766 Datasheet

This document provides specifications for an NPN silicon transistor, the STD1766. It is described as a medium power amplifier with a collector dissipation of 2W when mounted on a ceramic substrate. Key features include a low collector saturation voltage of 0.5V typical and compatibility with the complementary transistor STB1188. Electrical characteristic data is provided, including breakdown voltages, current ratings, gain, transition frequency and capacitance. Dimensional drawings of the SOT-89 package and pin connections are also included. Electrical characteristic curves illustrate properties like collector current vs base-emitter voltage, collector current vs collector-emitter voltage, and gain.

Uploaded by

yulianto_aje
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd

STD1766

Semiconductor

NPN Silicon Transistor

Descriptions
Medium power amplifier

Features
PC(Collector dissipation)=2W (Ceramic substate of 40400.8mm used)
Low collector saturation voltage : VCE(sat)=0.5V(Typ.)
Complementary pair with STB1188

Ordering Information
Type NO.

Marking

STD1766

Package Code
SOT-89

B2
: hFE rank, monthly code

Outline Dimensions

unit : mm
4.0
0.500.1

2.5

-0.3
+0.5

-0.3
+0.2

1.000.3

KST-8006-001

-0.02
+0.04

0.42

0~0.1

1.5

-0.1
+0.2

0.420.05

0.15 Typ.

2
0.520.05

4.5

-0.1
+0.2

1.820.05

PIN Connections
1. Base
2. Collector
3. Emitter

STD1766

(Ta=25C)

Absolute maximum ratings


Characteristic

Symbol

Ratings

Unit

Collector-Base voltage

VCBO

40

Collector-Emitter voltage

VCEO

32

Emitter-Base voltage

VEBO

IC

PC

0.5

Collector current
Collector dissipation

PC

Junction temperature

Tj

150

Storage temperature

Tstg

-55~150

* : When mounted on 40400.8mm ceramic substate

(Ta=25C)

Electrical Characteristics
Characteristic

Symbol

Test Condition

Min. Typ. Max.

Unit

Collector-Base breakdown voltage

BVCBO

IC=50A, IE=0

40

Collector-Emitter breakdown voltage

BVCEO

IC=1mA, IB=0

32

Emitter-Base breakdown voltage

BVEBO

IE=50A, IC=0

Collector cut-off current

ICBO

VCB=20V, IE=0

Emitter cut-off current

IEBO

VEB=4V, IC=0

DC current gain

hFE*

VCE=3V, IC=0.5A

100

320

Collector-Emitter saturation voltage


Transition frequency
Collector output capacitance

VCE(sat)

IC=2A, IB=200mA

0.5

0.8

fT

VCB=5V, IC=500mA

100

MHz

VCB=10V, IE=0, f=1MHz

30

pF

Cob

* : hFE rank / O : 100~200, Y : 160~320

KST-8006-001

STD1766
Electrical Characteristic Curves
Fig. 2 IC - VBE

Fig. 1 PC - Ta

Fig. 3 I C - VCE

Fig. 5 hFE

Fig. 4 VCE(sat) - IC

IC

KST-8006-001

This datasheet has been download from:


www.datasheetcatalog.com
Datasheets for electronics components.

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