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This document contains the homework assignment for a microelectronic circuits course. It includes 9 problems covering various topics: 1) Calculating the number of germanium atoms per cubic centimeter given the lattice constant, and calculating the density of silicon using similar parameters. 2) Five problems from Pierret involving diodes, transistors, and other circuit elements. 3) A problem on the Fermi function and calculating probabilities of states being occupied at different energy levels near the Fermi level. 4) Two additional problems from Pierret on transistor characteristics and circuit analysis.

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201 views7 pages

Homework+ 1 Solution

This document contains the homework assignment for a microelectronic circuits course. It includes 9 problems covering various topics: 1) Calculating the number of germanium atoms per cubic centimeter given the lattice constant, and calculating the density of silicon using similar parameters. 2) Five problems from Pierret involving diodes, transistors, and other circuit elements. 3) A problem on the Fermi function and calculating probabilities of states being occupied at different energy levels near the Fermi level. 4) Two additional problems from Pierret on transistor characteristics and circuit analysis.

Uploaded by

mehtajay1993
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Homework #1

Solution
ECE 3040 C Fall 2014
Microelectronic Circuits
School of Electrical and Computer Engineering
Georgia Institute of Technology
1. Diamond Lattice (20 points)
a. The lattice constant of Ge at room temperature is a = 5.65 . Determine the
number of Ge atoms per cm3.
b. Calculate the density of crystalline silicon at room temperature using the lattice
constant a = 5.43 , the atomic weight m = 28.09 g/mol, and the Avogadros
number 6.023 * 1023 mol-1.
Each diamond type crystal (e.g. Si and Ge) has 8 atoms per unit cell:
1) 8 atoms at the corners each of them shared between 8 unit cells
2) 6 atoms on the faces each shared between 2 cells
3) 4 atoms at inside locations, e.g. (, , ) and similar.
So, 8* (1/8) + 6*(1/2) + 4 = 8.
(a) Number of Ge atoms per cm3 = Number of atoms per unit cell divided by unit
cell volume a3:

# of Ge atoms

8
4.4 1022 cm3
3
a

(b) Density of silicon = # of atoms per cm-3 (= 5 * 1022 cm-3 from class, or
calculated similar to part (a)) * weight of 1 mol (28.09g/mol) / # atoms per mol (6
* 1023 mol-1)

5 10 22 m
8 28.09 g
g

2.33 3
23
3
Navogadro
6.023 10 cm
cm

2. Pierret, Problem 1.5, parts (a)-(d) (20 points)

3. Pierret, Problem 1.6 (20 points)

4. Pierret, Problem 1.7 (20 points)

5. Fermi Function (10 Points)


a. Under equilibrium conditions and T > 0 K, what is the probability of an electron
state being occupied if it is located at the Fermi level?
b. If EF is positioned at EC, determine the probability of finding electrons in states at
EC + kT.
c. The probability of a state is filled at EC + kT is equal to the probability a state is
empty at EC + kT. Where is the Fermi level located?
d. What is the probability of a state being occupied by a hole at an energy E = EF
kT?

(d) Probability that a state is occupied by a hole is 1 f(E), i.e. the probability for
a state being occupied with a hole at EF kT is
1 f(EF kT) 1

1
1 e

6. Pierret, Problem 2.3 (20 Points)

E kT E /kT
F
F

1
0.269
1 e1

7. Pierret, Problem 2.14, parts (a) and (b) (20 Points)

8. Pierret, Problem 2.17 (25 Points)

9. Pierret, Problem 2.18 (25 Points)

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