Scribd
Upload
36 views2 pages

2SC3679 High Voltage Transistor Specs

This document provides specifications and characteristics for the 2SC3679 silicon NPN triple diffused planar transistor, which is suitable for high voltage switching applications. The document includes: - Absolute maximum ratings and electrical characteristics for the transistor. - External dimensions of the TO-3P package. - Typical switching and thermal characteristics, including switching times, current vs. voltage curves, and derating curves. - Graphs of characteristics like current gain and saturation voltage over temperature and current.

Uploaded by

vdăduică
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
36 views2 pages

2SC3679 High Voltage Transistor Specs

This document provides specifications and characteristics for the 2SC3679 silicon NPN triple diffused planar transistor, which is suitable for high voltage switching applications. The document includes: - Absolute maximum ratings and electrical characteristics for the transistor. - External dimensions of the TO-3P package. - Typical switching and thermal characteristics, including switching times, current vs. voltage curves, and derating curves. - Graphs of characteristics like current gain and saturation voltage over temperature and current.

Uploaded by

vdăduică
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

2SC3679

Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) IAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3679 900 800 7 5(Pulse10) 2.5 100(Tc=25C) 150 55 to +150 (Ta=25C) Unit V V V A A W C C

Application : Switching Regulator and General Purpose


(Ta=25C)

IElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=2A IC=2A, IB=0.4A IC=2A, IB=0.4A VCE=12V, IE=0.5A VCB=10V, f=1MHz 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 75typ

External Dimensions MT-100(TO3P)


5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1

2SC3679

Unit

A A
V V MHz pF
20.0min 19.90.3

4.0

a b

3.20.1

4.0max

2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4

ITypical Switching Characteristics (Common Emitter)


VCC (V) 250 RL () 125 IC (A) 2 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.3 IB2 (A) 1 ton (s) 1max tstg (s) 5max tf (s) 1max

5.450.1 B C E

5.450.1

Weight : Approx 6.0g a. Type No. b. Lot No.

I C V CE Characteristics (Typical)
5

V CE (sat),V BE (sat) I C Temperature Characteristics (Typical)


(I C /I B =5) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E (s a t) (V )

I C V BE Temperature Characteristics (Typical)


5 (V C E =4V)

700mA

600mA
500mA

Collector Current I C (A)

300mA

Collector Current I C (A)

400 mA

3
mp)

Temp (Case 25C

200mA

e Te

I B =100mA

Te m p) 25 C 5 5 C

V C E (sat) 0 0.03 0.05 0.1 0.5

Ca 125C (

se

10

0.2

0.4

0.6

0.8

55C (C

55C (Case Temp) 25C (Case Temp) e Temp) 125C (Cas

125C

(Cas

V B E (sat)

ase Tem

p)

1.0

1.2

Collector-Emitter Voltage V C E (V)

Collector Current I C (A)

Base-Emittor Voltage V B E (V)

(V C E =4V) 50 10

j - a ( C/ W)

h FE I C Characteristics (Typical)
t on t s t g t f ( s)

t on t stg t f I C Characteristics (Typical)

j-a t Characteristics
2

DC Cur rent Gain h F E

Transient Thermal Resistance

125C
25C

t s tg V C C 250V I C :I B 1 :I B2 =2:0.3:1Const.

55C

Switching T im e

0.5

1 0.5 t on 0.2 0.1 0.5

tf

10

5 0.02

0.05

0.1

0.5

0.1

10 Time t(ms)

100

1000

Collector Current I C (A)

Collector Current I C (A)

Safe Operating Area (Single Pulse)


20 10 5 Collector Curren t I C ( A)
10
10
1m

Reverse Bias Safe Operating Area


20 100

P c T a Derating

5 Collector Curren t I C (A)

0m

M aximum Power Dissipa ti on P C (W)

10

10
10

ith

DC ( Tc

In fin

1 0.5

1 0.5

ite

=2 5 C)

he

50

at si nk

0.1 0.05

Without Heatsink Natural Cooling

0.1 0.05

Without Heatsink Natural Cooling L=3mH IB2=1.0A Duty:less than1%

0.01 5

10

50

100

500

1000

0.01 50

100

500

1000

3.5 0

Without Heatsink 0 25 50 75 100 125 150

Collector-Emitter Voltage V C E (V)

Collector-Emitter Voltage V C E (V)

Ambient Temperature Ta(C)

68

This datasheet has been downloaded from: www.DatasheetCatalog.com Datasheets for electronic components.

You might also like