FDS6982

June 1999

FDS6982
Dual N-Channel, Notebook Power Supply MOSFET
General Description
This part is designed to replace two single SO-8 MOSFETs in synchronous DC:DC power supplies that provide the various peripheral voltage rails required in notebook computers and other battery powered electronic devices. FDS6982 contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized for low conduction losses (less than 20m at VGS = 4.5V).

Features
Q2: 8.6A, 30V. RDS(on) = 0.015 @ VGS = 10V RDS(on) = 0.020 @ VGS = 4.5V Q1: 6.3A, 30V. RDS(on) = 0.028 @ VGS = 10V RDS(on) = 0.035 @ VGS = 4.5V

Fast switching speed. High performance trench technology for extremely low RDS(ON).

Applications Battery powered synchronous DC:DC converters. Embedded DC:DC conversion.

D1 D1 D2 D2 G1
6 7
Q2

Q1

4 3 2 1

SO-8
pin 1

G2 S2

S1
8

Absolute Maximum Ratings

Symbol
V DSS V GSS ID PD

T A = 25C unless otherwise noted

Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c) (Note 1a)

Q2
30 20 8.6 30 2 1.6 1 0.9 -55 to +150

Q1
30 20 6.3 20

Units
V V A W

TJ, Tstg

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

78 40

C/W C/W

Package Marking and Ordering Information

Device Marking
FDS 6982
1999 Fairchild Semiconductor Corporation

Device
FDS 6982

Reel Size
13

Tape Width
12mm

Quantity
2500 units
FDS6982, Rev. D1

FDS6982

Electrical Characteristics
Symbol Parameter

TA = 25C unless otherwise noted

Test Conditions

Type Min Typ Max Units

Off Characteristics
BVDSS BVDSS TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C Q2 Q1 Q2 Q1 All All All 30 30 27 26 1 100 -100 V mV/C A nA nA

Zero Gate Voltage Drain VDS = 24 V, VGS = 0 V Current Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V
(Note 2)

On Characteristics
VGS(th) VGS(th) TJ RDS(on)

Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance

VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 8.6 A VGS = 10 V, ID = 8.6 A, TJ = 125C VGS = 4.5 V, ID = 7.5 A VGS = 10 V, ID = 6.3 A VGS = 10 V, ID = 6.3 A, TJ = 125C VGS = 4.5 V, ID = 5.6 A VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 8.6 A VDS = 5 V, ID = 6.3 A

Q2 Q1 Q2 Q1 Q2

1 1

2.2 1.6 -5 -4 0.012 0.018 0.016 0.021 0.038 0.028

3 3

V mV/C

Q1

0.015 0.024 0.020 0.028 0.047 0.035

ID(on) gFS

On-State Drain Current Forward Transconductance

Q2 Q1 Q2 Q1

30 20 50 40

A S

Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10 V, VGS = 0 V, f = 1.0 MHz Q2 Q1 Q2 Q1 Q2 Q1 2085 760 420 160 160 70 pF pF pF

FDS6982, Rev. D1

FDS6982

Electrical Characteristics
Symbol Parameter

(continued)

TA = 25C unless otherwise noted

Test Conditions
(Note 2)

Type Min

Typ

Max Units

Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge

VDD = 15 V, ID = 1 A, VGS = 10V, RGEN = 6

Q2 VDS = 15 V, ID = 8.6 A, VGS = 5 V Q1 VDS = 15 V, ID = 6.3 A,VGS = 5 V

Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1

15 10 11 14 36 21 18 7 18.5 8.5 7.3 2.4 6.2 3.1

27 18 20 25 58 34 29 14 26 12

ns ns ns ns nC nC nC

Drain-Source Diode Characteristics and Maximum Ratings

IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A VGS = 0 V, IS = 1.3 A Voltage
(Note 2) (Note 2)

Q2 Q1 Q2 Q1

0.72 0.74

1.3 1.3 1.2 1.2

A V

Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board [Link] rating based on independant single device opperation.

a) 78 C/W when mounted on a 0.5 in2 pad of 2 oz. copper.

b) 125 C/W when mounted on a 0.02 in2 pad of 2 oz. copper.

c) 135 C/W when mounted on a minimum pad.

Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

FDS6982, Rev. D1

FDS6982

Typical Characteristics: Q2

50 VGS = 10V 40 5.0V 4.5V

2 1.8 1.6 1.4 VGS = 4.0V 4.5V 5.0V 1.2 6.0V 7.0V 1 10V

30

4.0V

20 3.5V 10 3.0V 0 1 2 3 4

0.8 0 10 20 30 40 50

VDS, DRAIN-SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.

1.6

ID = 8.6A VGS = 10V

0.04

ID = 4.5A
0.03

1.4

1.2
0.02

TA = 125 C

1
0.01

TA = 25 C

0.8

0.6 -50 -25 0 25 50 75 100

o

125

150

10

TJ, JUNCTION TEMPERATURE ( C)

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Temperature.

Figure 4. On-Resistance Variation with Gate-to-Source Voltage.

50 VDS = 5V 40

100

TA = -55 C

25 C 125 C
o

VGS = 0V 10 TA = 125 C 1
o

30
0.1

25 C -55 C
o

20

0.01 0.001 0.0001

10

0 1 2 3 4 5 6

0.4

0.8

1.2

1.6

VGS, GATE TO SOURCE VOLTAGE (V)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

FDS6982, Rev. D1

FDS6982

Typical Characteristics: Q2

(continued)

10 ID = 8.6A 8 15V VDS = 5V 10V

3000 2500 CISS 2000 f = 1MHz VGS = 0 V

6 1500 4 1000 2 500 0 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30

COSS CRSS

Qg, GATE CHARGE (nC)

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate-Charge Characteristics.

Figure 8. Capacitance Characteristics.

100 RDS(ON) LIMIT 10 100s 1ms 10ms 100ms 1s 10s DC VGS = 10V SINGLE PULSE RJA = 135 C/W TA = 25 C 0.01 0.1 1 10 100
o o

30 SINGLE PULSE 25 20 15 10 5 0 0.01 0.1 1 10 100 1000 RJA = 135 C/W TA = 25 C

o o

0.1

VDS, DRAIN-SOURCE VOLTAGE (V)

SINGLE PULSE TIME (SEC)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum Power Dissipation.

FDS6982, Rev. D1

FDS6982

Typical Characteristics: Q1

40 VGS = 10V 6.0V 4.5V 4.0V

2 1.8 1.6 3.5V VGS = 3.5V 4.0V 4.5V 3.0V 1.2 1 2.5V 5.0V 6.0V 10V

30

20

1.4

10

0 0 1 2 3 4

0.8 0 10 20 ID, DRAIN CURRENT (A) 30 40

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 11. On-Region Characteristics.

Figure 12. On-Resistance Variation with Drain Current and Gate Voltage.

1.6

0.08

ID = 6.3A VGS = 10V

0.06

ID = 3.5A

1.4

1.2
0.04

TA = 125 C

1
0.02

0.8

TA = 25 C

0.6 -50 -25 0 25 50 75 100

o

125

150

10

TJ, JUNCTION TEMPERATURE ( C)

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 13. On-Resistance Variation with Temperature.

Figure 14. On-Resistance Variation with Gate-to-Source Voltage.

40 VDS = 5V 30

100 TA = -55 C
o

25 C

VGS = 0V 125 C
o

10 1 TA = 125 C 25 C
o o

20

0.1 0.01

-55 C

10 0.001 0 1 2 3 4 5 6 0.0001 0 0.4 0.8 1.2 1.6

VGS, GATE TO SOURCE VOLTAGE (V)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 15. Transfer Characteristics.

Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature.

FDS6982, Rev. D1

FDS6982

Typical Characteristics: Q1

(continued)

10 ID = 6.3A 8 15V VDS = 5V 10V

1200 1000 800 f = 1MHz VGS = 0 V

6 600 4 400 2 200 0 0 4 8 Qg, GATE CHARGE (nC) 12 16 0 5 10 15

CISS

COSS CRSS

20

25

30

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 17. Gate-Charge Characteristics.

Figure 18. Capacitance Characteristics.

100 RDS(ON) LIMIT 10 10ms 100ms 1s 10s DC VGS = 10V SINGLE PULSE RJA = 135 C/W TA = 25 C 0.01 0.1 1 10 100
o o

30 SINGLE PULSE 100s 1ms 25 20 15 10 5 0 0.01 0.1 1 10 100 1000 RJA = 135 C/W TA = 25 C
o o

0.1

VDS, DRAIN-SOURCE VOLTAGE (V)

SINGLE PULSE TIME (SEC)

Figure 19. Maximum Safe Operating Area.

Figure 20. Single Pulse Maximum Power Dissipation.

FDS6982, Rev. D1

FDS6982

Typical Characteristics: Q1 & Q2

(continued)

1 TRANSIENT THERMAL RESISTANCE 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01 0.1 t 1, TIME (sec) 1
D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk)

r(t), NORMALIZED EFFECTIVE

R JA (t) = r(t) * R JA R JA = 135C/W

t1

t2

TJ - TA = P * R JA (t) Duty Cycle, D = t1 /t2

10 100 300

Figure 21. Transient Thermal Response Curve.

FDS6982, Rev. D1

TRADEMARKS
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Preliminary

First Production

No Identification Needed

Full Production

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H4