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Silicon NPN Transistor 2SC4467 Specs

This document summarizes the specifications and characteristics of the 2SC4467 silicon NPN triple diffused planar transistor. It includes: 1) Absolute maximum ratings for voltage, current, power and temperature. 2) Typical electrical characteristics such as current gain, saturation voltage, and cutoff frequency under various conditions. 3) External dimensions and packaging information. 4) Graphs of key characteristics like current-voltage, gain-current, and thermal resistance over time.

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66 views1 page

Silicon NPN Transistor 2SC4467 Specs

This document summarizes the specifications and characteristics of the 2SC4467 silicon NPN triple diffused planar transistor. It includes: 1) Absolute maximum ratings for voltage, current, power and temperature. 2) Typical electrical characteristics such as current gain, saturation voltage, and cutoff frequency under various conditions. 3) External dimensions and packaging information. 4) Graphs of key characteristics like current-voltage, gain-current, and thermal resistance over time.

Uploaded by

perro s
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd

2SC4467

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 160 120 6 8 3 80(Tc=25C) 150 55 to +150 Unit V V V A A W C C

Application : Audio and General Purpose


(Ta=25C) Ratings 10max 10max 120min 50min 1.5max 20typ 200typ V pF
20.0min 4.0max

sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB hFE Rank Conditions VCB=160V VEB=6V IC=50mA VCE=4V, IC=3A IC=3A, IB=0.3A VCE=12V, IE=0.5A VCB=10V, f=1MHz

External Dimensions MT-100(TO3P)


5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1

Unit

A A
19.90.3

4.0

a b

3.20.1

MHz

2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4

O(50 to100), P(70 to140), Y(90 to180)


5.450.1 B C E

sTypical Switching Characteristics (Common Emitter)


VCC (V) 40 RL () 10 IC (A) 4 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.4 IB2 (A) 0.4 ton (s) 0.13typ tstg (s) 3.50typ tf (s) 0.32typ

5.450.1

Weight : Approx 6.0g a. Part No. b. Lot No.

I C V CE Characteristics (Typical)
350m

V CE ( sat ) I B Characteristics (Typical)


Collector-Emitter Saturation Voltage V C E (s at) (V ) 3

I C V BE Temperature Characteristics (Typical)


8 (V C E =4V)

20

m 50

0m

m 100

A
75 m A

Collector Current I C (A)

50m A

Collector Current I C (A)

4
mp)

mp)

Cas

C (

(Cas

I B =10mA

I C =8A 0 4A 2A 0.5 0.6 0.7 0.8 0.9 1.0 0

0.1 0.2 0.3 0.4

0.5

30C

25C

125

(Case

e Te

20mA

e Te

Temp

1.0

1.5

Collector-Emitter Voltage V C E (V)

Base Current I B (A)

Base-Emittor Voltage V B E (V)

h FE I C Characteristics (Typical)
(V C E =4V) 200 DC Curr ent Gain h FE

h FE I C Temperature Characteristics (Typical)


(V C E =4V) 200 125C DC Curr ent Gain h FE

j- a ( C/W)

j-a t Characteristics
3

Typ
100

100

25C 30C

Transient Thermal Resistance

50

50

0.5

20 0.02

0.1

0.5

20 0.02

0.3

0.1

0.5

10 Time t(ms)

100

1000

Collector Current I C (A)

Collector Current I C (A)

f T I E Characteristics (Typical)
(V C E =12V) 40 20

Safe Operating Area (Single Pulse)


80
10 m s

P c T a Derating

Cut-o ff Fr equ ency f T (M H Z )

30 Collector Cur rent I C (A)

M aximum Power Dissipa ti on P C ( W)

10 5

100ms

60

W ith

Typ

DC

In fin ite he

20

40

at si

nk

0.5 Without Heatsink Natural Cooling

10

20

Without Heatsink 0 0.02 0.1 1 Emitter Current I E (A) 8 0.1 5 10 50 100 200 3.5 0 0 25 50 75 100 125 150

Collector-Emitter Voltage V C E (V)

Ambient Temperature Ta(C)

108

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