Researchers 'write' europium‑based light emitters on graphene with laser precision
Researchers from the University of Jyväskylä and Aalto University have developed a laser‑assisted area‑selective atomic/molecular layer deposition (AS‑ALD/MLD) method that grows europium‑organic thin films on graphene and other 2D materials with submicron precision, one molecular layer at a time. This resist‑free process turns chemically inert 2D surfaces into spatially defined growth templates, enabling patterned photoluminescent heterostructures and controllable electronic doping on a single chip.
The approach combines femtosecond laser two‑photon oxidation (TPO) with ALD/MLD to locally activate single‑layer graphene on a silicon chip. In selected regions, tightly focused fs‑laser pulses create hydroxyl and other oxygen‑containing functional groups, which act as nucleation sites for a europium‑organic Eu‑BDC network, while pristine graphene remains essentially non‑reactive. By tuning the laser dose, the researchers directly control nucleation density, achieving homogeneous Eu‑organic films up to about 11 nm thick with over 90% area selectivity and submicron feature sizes, without any resist or etching steps.
