2003
Spectrum Description GaAs 25.1 ± 0.8 3.9 1 Global Kopin, AlGaAs window GaAs (thin film) 23.3 ± 0.7 4.0 1 Global Kopin, 5-mm GaAs(poly) 18.2 ± 0.5 4.0 1 Global Res. Triangle Inst. (RTI) Ge substrate InP 21.9 ± 0.7 4.0 1 Global Spire, epitaxial GaInP/GaAs 30.3 4.0 1 Global Japan Energy GaInP/GaAs/Ge 28.7 ± 1.4 29.93 1 Global Spectrolab Si 24.7 ± 0.5 4.0 1 Global UNSW, PERL GaAs 27.6 ± 1.0 0.13 255 Direct Spire GaInAsP 27.5 ± 1.4 0.08 171 Direct NREL, ENTECH cover InP 24.3 ± 1.2 0.08 99 Direct NREL, ENTECH cover GaInP/GaAs/Ge 32.4 ± 2.0 0.1025 414 Direct Spectrolab GaAs/GaSb 32.6 ± 1.7 0.053 100 Direct Boeing, four-terminal mechanical stack InP/GaInAs 31.8 ± 1.6 0.063 50 Direct NREL, three-terminal, monolithic GaInP/GaAs 30.2 ± 1.4 0.103 180 Direct NREL, monolithic Si 26.8 ± 0.8 1.6 96 Direct Sunpower, back contact of 30.3% [11]. The current record solar cell efficiencies for this device, along with the record efficiencies of other multijunction devices, are given in Table 9.1.