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Handbook of Photovoltaic Science and Engineering

2003

Abstract

Spectrum Description GaAs 25.1 ± 0.8 3.9 1 Global Kopin, AlGaAs window GaAs (thin film) 23.3 ± 0.7 4.0 1 Global Kopin, 5-mm GaAs(poly) 18.2 ± 0.5 4.0 1 Global Res. Triangle Inst. (RTI) Ge substrate InP 21.9 ± 0.7 4.0 1 Global Spire, epitaxial GaInP/GaAs 30.3 4.0 1 Global Japan Energy GaInP/GaAs/Ge 28.7 ± 1.4 29.93 1 Global Spectrolab Si 24.7 ± 0.5 4.0 1 Global UNSW, PERL GaAs 27.6 ± 1.0 0.13 255 Direct Spire GaInAsP 27.5 ± 1.4 0.08 171 Direct NREL, ENTECH cover InP 24.3 ± 1.2 0.08 99 Direct NREL, ENTECH cover GaInP/GaAs/Ge 32.4 ± 2.0 0.1025 414 Direct Spectrolab GaAs/GaSb 32.6 ± 1.7 0.053 100 Direct Boeing, four-terminal mechanical stack InP/GaInAs 31.8 ± 1.6 0.063 50 Direct NREL, three-terminal, monolithic GaInP/GaAs 30.2 ± 1.4 0.103 180 Direct NREL, monolithic Si 26.8 ± 0.8 1.6 96 Direct Sunpower, back contact of 30.3% [11]. The current record solar cell efficiencies for this device, along with the record efficiencies of other multijunction devices, are given in Table 9.1.

Key takeaways

  • This chapter discusses the principles and operation of multijunction solar cells fabricated from III-V semiconductor compounds and alloys, with a particular emphasis on the GaInP/GaAs tandem cell.
  • The adding of series J -V curves in this case is illustrated graphically in Figure 9.5, which shows J -V curves for a GaInP top subcell, a GaAs bottom subcell, and the twojunction series-connected combination of these two subcells.
  • These values are comparable to those used in actual GaInP/GaAs multijunction cells, which provide an optimal combination of high quantum efficiency, low dark current, and low series resistance.
  • Again taking the GaInP/GaAs tandem as an example, recall that GaAs subcell J SC depends not only on the GaAs band gap but also on the GaInP band gap, because the GaInP subcell filters the light to the GaAs subcell.
  • One very useful area that is common to both industrial and laboratory processes is the use of selective and nonselective etchants for the various materials used in GaInP/GaAs multijunction solar cells.