Spintronics: A Spin-Based Electronics Vision for the Future

bvicam.ac.in

Spintronics is the field in which the spin degree of freedom of the electron plays an important role in addition to or in place of the charge degree of freedom in mainstream electronics. Spin of an electron, although not given sincere wattage till now can play a very vital role in understanding the transport phenomenon of charge in nano scale devices. Adding spin degree of freedom to electrons will provide significantly more capability and performance to the nano scale electronic devices . Spin transport effects and spin polarization have been very well defined using ferromagnetic materials. The electrons at or very near to the Fermi surface, in the ferromagnetic materials are partially spin polarized. The larger the degree of spin polarization of these electrons, the bigger the spin transport effects. Spin based devices such as Spin-FETs , Spin-LEDs , Spin-resonant tunneling devices ,spin coherent devices and spin quantization devices are now real and at the verge of implementation. Our Tutorial paper tries to exaplore the various possibilities of research in the field of Nano structured devices, using Spintronics as the basis of nano devices.

MRS Bulletin, 2003

This article introduces the October 2003 issue of MRS Bulletin on “New Materials for Spintronics.” As a result of quantum mechanics, the carriers in ferromagnetic metals such as Fe, Co, and Ni are spin-polarized due to an imbalance at the Fermi level in the number of spin-up and spin-down electrons. A carrier maintains its spin polarization as long as it does not encounter a magnetic impurity or interact with the host lattice by means of spin-orbit coupling. The discovery of optically induced, long-lived quantum coherent spin states in semiconductors has created a range of possibilities for a new class of devices that utilize spin. This discovery also points to the need for a wider range of spin-polarized materials that will be required for different device configurations. In this issue of MRS Bulletin, we focus on three classes of candidate spintronic materials and review the current state of our understanding of them: III–V and II–VI semiconductors, oxides, and Heusler alloys. The...

John Wiley & Sons, Inc. eBooks, 2007

IEEE Transactions on Magnetics, 2015

The Technical Committee of the IEEE Magnetics Society has selected seven research topics to develop their roadmaps, where major developments should be listed alongside expected timelines: 1) hard disk drives; 2) magnetic random access memories; 3) domain-wall devices; 4) permanent magnets; 5) sensors and actuators; 6) magnetic materials; and 7) organic devices. Among them, magnetic materials for spintronic devices have been surveyed as the first exercise. In this roadmap exercise, we have targeted magnetic tunnel and spin-valve junctions as spintronic devices. These can be used, for example, as a cell for a magnetic random access memory and a spin-torque oscillator in their vertical form as well as a spin transistor and a spin Hall device in their lateral form. In these devices, the critical role of magnetic materials is to inject spin-polarized electrons efficiently into a nonmagnet. We have accordingly identified two key properties to be achieved by developing new magnetic materials for future spintronic devices: 1) half-metallicity at room temperature (RT) and 2) perpendicular anisotropy in nanoscale devices at RT. For the first property, five major magnetic materials are selected for their evaluation for future magnetic/spintronic device applications: 1) Heusler alloys; 2) ferrites; 3) rutiles; 4) perovskites; and 5) dilute magnetic semiconductors. These alloys have been reported or predicted to be half-metallic ferromagnets at RT. They possess a bandgap at the Fermi level E F only for its minority spins, achieving 100% spin polarization at E F. We have also evaluated L1 0 alloys and D0 22-Mn alloys for the development of a perpendicularly anisotropic ferromagnet with large spin polarization. We have listed several key milestones for each material on their functionality improvements, property achievements, device implementations, and interdisciplinary applications within 35 years time scale. The individual analyses and the projections are discussed in the following sections.

IEEE Transactions on Magnetics, 2021

Development of future sensor, memory, and computing nanodevices based on novel physical concepts is one of the significant research endeavors in solid-state research. The field of spintronics is one such promising area of nanoelectronics which utilizes both the charge and spin of an electron for device operations. The advantage offered by spin systems is in their non-volatility and lowpower functionality. This paper reviews emerging spintronic phenomena and the research advancements in diverse spin based applications. Spin devices and systems for logic, memories, emerging computing schemes, flexible electronics and terahertz emitters are discussed in this report.

Nature Electronics, 2020

Spintronic devices exploit the spin, as well as the charge, of electrons and could bring new capabilities to the microelectronics industry. However, in order for spintronic devices to meet the ever-increasing demands of the industry, innovation in terms of materials, processes and circuits are required. Here, we review recent developments in spintronics that could soon have an impact on the microelectronics and information technology industry. We highlight and explore four key areas: magnetic memories, magnetic sensors, radio-frequency and microwave devices, and logic and non-Boolean devices. We also discuss the challenges-at both the device and the system level-that need be addressed in order to integrate spintronic materials and functionalities into mainstream microelectronic platforms.

2013

Spintronics is a new paradigm for electronics which utilizes the electron's spin in addition to its charge for device functionality. It is a rapidly emerging field of science and technology that will most likely have a significant impact on the future of all aspects of electronics as we continue to move into the 21st century. The primary areas for potential applications are information storage, computing, and quantum information. The main objective of this paper is to present a current status of fundamentals of Spintronics including the recent advantages and well established results like MRAM, Quantum computer – only one step remain to come on Earth etc. The primary focus is on basics physical and quantum properties of electron underlying Spin mechanics, Spin polarization, Spin transport through metal and semiconductor, Spin injection etc., principal of GMR with their types and applications is also discussed in details in this

Iee Proceedings-circuits Devices and Systems, 2005

Spin-dependent phenomena in semiconductors may lead to devices with new or enhanced functionality, such as polarised solid-state light sources (spin light-emitting diodes), novel microprocessors and sensitive biological and chemical sensors. The realisation of robust semiconductor spin-device technology requires the ability to control the injection, transport and detection of polarised carriers, and to manipulate their density by a field gating. The absence of Sibased or room-temperature dilute magnetic semiconductors has subdued the initial excitement over semiconductor spintronics, but recent reports demonstrate that progress is far from dormant. The authors give examples of a number of different spin-device concepts for polarised light emission, spin field-effect transistors) and nanowire sensors. It is important to re-examine some of the earlier concepts for spintronics devices, such as the spin field-effect transistor, to account for the presence of the strong magnetic field which has deleterious effects. In some of these cases, the spin device appears to have no advantage relative to the conventional charge-control electronic analogue. There have been demonstrations of device-type operation in structures based on GaMnAs and InMnAs at low temperatures. The most promising materials for room-temperature polarised light emission are thought to be GaN and ZnO, but results to date on realising such devices have been disappointing. The short spin-relaxation time observed in GaN/InGaN heterostructures probably results from the Rashba effect. Possible solutions involve either cubic phase nitrides or the use of additional stressor layers to create a larger spin-splitting, to get polarised light emission from these structures, or to look at alternative semiconductors and fresh device approaches.

International Journal of Scientific Research in Computer Science, Engineering and Information Technology, 2020

We already know that electrons have a charge along with a spin, but until recently, these two have been considered separately. The motion of electric charge is considered as the heart of electronic circuits, and the flow of electron spin plays a crucial role in spintronic circuits. Adding the spin degree of freedom provides new capabilities, new effects, and new functionalities. It all started with the discovery of the Giant Magnetoresistance (GMR) in 1988, which opened the road to an effective control of the motion of the electron charges by focusing on their spin through the orientation of magnetization. Today, spintronics has entered into almost every household as the read sensors for the hard drives present in every desktop and most laptops. Magnetic Random Access Memory (MRAM) and Spin Transfer Torque (STT) RAM are replacing Static RAM where ultra-dense memories are not required. Soon these spintronic memories will penetrate the cell phone market because they offer lower power and are non-volatile. The potential held by Spintronics is very promising for new advancements in science and technology in the 21st century. This paper discusses the evolution of spintronics from the initial research of spin-dependent transport in ferromagnetic materials to the discovery of the giant magnetoresistance and to the most recent advances. Today, this field of research is extending considerably, with very encouraging new technologies like the phenomena of spin transfer, molecular spintronics, nanoscale spintronics, and single-electron spintronics.

Journal of Superconductivity and Novel Magnetism, 2020

Spintronics is a promising technology which aims to solve the major problems existing in today's conventional electronic devices. Realistically, this technology has the ability to combine the main functions of the modern semiconductor microelectronics and magnetic storage devices in single chip. Electrons have two fundamental degrees of freedom (DOF) called charge and spin. Conventional electronic devices used only the charge of electron for information processing using binary bits 0 and 1. The continuous developments in the conventional electronics are basically depending on reducing component size (transistors, capacitors, etc.) embedded in integrated circuits (random access memory, microprocessor, etc.). In 2019, the actual size of the transistor placed in commercial microprocessor is about 50 nm with gate length of 20 nm and node of 7 nm fabricated using TSMC's 7-nm FinFET (Taiwan Semiconductor Manufacturing Company 7-nm Fin Field Effect Transistor). The progress in the electronic devices will come to the end when the transistor node size reaches to 1 nm. Below this size, the fabrication, writing, and reading processes will be difficult or impossible due to quantum size effect. Spintronics is the alternative future technology, which is based on using the fundamental spin of electron in additions to its charge to carry and store information. Transfer from conventional electronics to spintronics technology opens the possibilities to construct devices with high storage density, low power consummation, and fast operation and that are cheap and robust. The main aim of this work is to give a simple and clear picture to researchers who are beginners of research in this field. In this review, basic outlines of spintronics technology and its fundamental properties were discussed. Here, we highlight two groups of materials strongly candidates to fabricate spintronics devices, denoted diluted magnetic semiconductor and multiferroic materials.

SPIN, 2012

Arxiv preprint cond-mat/0405528, 2004

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic ...

Magnetochemistry, 2016

In this paper, we present a comprehensive review of research on electrical and charge transport properties of spin crossover complexes. This includes both the effect of spin-state switching on the dielectric permittivity and electrical conductivity of the material and vice versa the influence of an applied electrical field (or current) on the spin-state of the system. The survey covers different size scales from bulk materials and thin films to nanoparticles and single molecules and embraces the presentation of several device prototypes and hybrid materials as well.

IEEE Transactions on Magnetics, 2000

SPIN TRansport eletrONICS or SPINTRONICS, in which the spin degree of freedom of the electron will play an important role in addition to or in place of the charge degree of freedom in mainstream electronics will be important as we start the new millennium. The prospects for this new electronics in nonvolatile radiation hard magnetic memory for the Department of Defense (DoD) will be described.