Spray Pyrolysis Deposition of Single and Mixed Oxide Thin Films

— Nano structure of mixed (SnO2)1-x(ZnO)x thin films were prepared by spray pyrolysis technique at a substrate temperature of 400°C. The films deposited were 190 nm thickness. The XRD analysis for its structural characteristic has been performed. The average grain size was found to be between 21.27 and 15.80 nm.AFM Atomic Force microscope gives good information about the surface topography of the film.It is understood that the crystallinity of SnO2increases with increasing ZnO Vol.%. Keywords— Spray pyrolysis, tin oxide, zinc oxide, structural properties, and thin films.

EPJ Web of Conferences, 2016

In this work we developed and tested spray pyrolysis system for layers deposition. In the system we have used ultrasonic apparatus (nebulizator) as a sprayer. A zinc nitrate aqueous solution has been used as a precursor solution. The idea of the method is the decomposition of nitrate on a hot substrate according to the reaction Zn(NO 3) 2 → ZnO +2 NO 2 +1/2O 2. The layers were grown on glass, (001)Si and KCl substrates at the temperatures 300-500 0 C. The thickness of the obtained layers was in the range 50-500 nm, depending on the growth time and rate. The influence of substrate temperature on the morphology of the layers has been studied by SEM method. The energy gap of the layers was found to be the range of 3.26-3.3 eV from their absorption spectra.

Volume 10: Micro- and Nano-Systems Engineering and Packaging, 2013

ABSTRACT Chemical Spray Pyrolysis (CSP) of ZnO and SnO2 is of interest for gas sensor applications. The structural properties of the deposited film can be strongly influenced by deposition conditions. In this work, two solutions consisting of Tin Chloride and Zinc Chloride was sprayed on a heated substrate, where temperature was varied from 400° C to 450° C for ZnO, and from 350° C to 500° C for SnO2. X-ray diffraction and scanning electron microscopy, indicating a non-homogenous-structured film formed at low temperature for both oxides. At 450° C, a porous structure is observed for SnO2. This structure becomes homogenous at higher temperature. It was also found that at temperatures lower than 450° C, substrate temperature has significant impact on the composition of the synthesized films.

Canadian Journal of Physics, 2008

ZnO:Al(ZAO) films with various amount of solution, in the range 10–120 mL, were prepared on a glass substrate. Deposition was carried out using a spray method, and the substrate temperature was held at 500 °C. It was found that increasing the amount of solution causes the ZnO:Al thin films to exhibit a strong orientation along (002). The variation in the structural properties due to variation in the volume of solution was investigated by means of X-ray diffraction. The lowest sheet resistance obtained was 40 Ω/cm2 for a 120 mL solution. PACS Nos.: 73.61.–r, 78.20.–e

e-Journal of Surface Science and Nanotechnology, 2006

Spray pyrolysis deposition technique has been used to grow ZnO thin films doped with different dopant species (Al, Cu, I). The optical and electrical properties of films were investigated as function of dopant type and concentration. The structural characteristics of undoped and doped ZnO films were studied using X-ray diffraction (XRD). The electrical resistivity as low as 4 × 10 −2 Ωcm was obtained for ZnO:Al with 5 at.% dopant concentration. ZnO:Cu films prepared at specific conditions exhibited p-type conductivity. The optical band gap of doped ZnO films varied from 3.09 eV to 3.2 eV. XRD investigation confirmed that the doped ZnO films had preferred orientation in the direction of (101) plane.

The effect of deposition temperature on the surface morphology and optical properties of zinc oxide (ZnO) thin films were studied. The ZnO films were deposited on microscopic glass substrates using the spray pyrolysis method for different substrate deposition temperatures. The deposited films were characterized by an X-ray diffractometer (XRD), a spectrophotometer, scanning electron microscopy (SEM), and atomic force microscopy (AFM). The transmittance spectra recorded through the spectrophotometer exhibits 85% transmittance. The XRD spectra showed polycrystalline nature of ZnO film. Surface parameters were calculated and compared for different thin films. It showed that the films were polycrystalline with hexagonal wurtzite structure and c-axis was perpendicular to the substrate. The grain size of the films changed from 240 to 440 nm with different substrate temperatures. The optical energy gap of thin films increases from 3.26 eV to 3.35 as the substrate temperature increasing fro...

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS

Transparent conducting oxides (TCOs) are widely used as electrodes in optoelectronic devices due to their optical transparency in the visible range and to their electrical conductivity. They can be found in various applications such as photovoltaic solar cells, liquid crystal displays, sensors and organic light emitting devices. Indium tin oxide (ITO) and zinc oxide (ZnO) are the two major TCO materials to be used. In our case, we have deposited Zinc oxide onto pyrex substrates by Spray Pyrolysis technique at temperatures ranging from 350 to 450°C by step of 25°C. The structural properties of the films were studied by X-Ray diffraction (XRD) and confirmed by selected area electron diffraction (SAED) mode. Surface morphology of ZnO thin films was analyzed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The films appear to be composed of ZnO nanoparticles (ZnO NPs), whom size increases with temperature. The results showed the presence of the wurtzite phase of ZnO with an orientation along the c-axis of the crystallites. Morphology images of the films obtained by Scanning electron microscopy revealed that pure ZnO film grew as quasi-aligned hexagonal shaped microrods with diameters varying between 100 and 400 nm. UV-visible spectroscopy measurements were also performed to determine the optical band gap.

Thin Solid Films, 1995

Undoped and In-doped ZnO thin films have been prepared on glass substrates from sohrtions of Zn(CH3C02)2'2H20 in a mixture of deionized water and isopropyl alcohol by spray pyrolysis. Their optical, morphological and structural qualities have been studied and the effect of the preparation conditions discussed. It was shown that the main factors determining the parameters of ZnO films are the growth temperature and the indium concentration. The growth temperatures of 625-675 K, indium doping levels of l-l.5 at.% and precursor concentrations of 0.1-0.2 mot I-' are preferable to achieve ZnO films with optical and structural qualities as required for solar cell applications.

Current Applied Physics, 2012

Zinc oxide (ZnO) thin films were deposited by spray pyrolysis technique using different precursors. Three starting solutions salts namely: zinc acetate, zinc chloride and zinc nitrate were used. The properties of these solutions and their influence upon ZnO films growth rate are investigated. The obtained results indicate that the dissociation energy of the starting solution plays an important role on films growth rate. A linear relationship between the solution dissociation energy and the growth rate activation energy was found. However, the surface tension of the used solution controls the droplet shape impact. Both solution surface tension and dissociation enthalpy alter the microstructure of the formed film. Films deposited with zinc acetate are characterized by a smooth surface, dense network and high transparency, while films deposited with zinc chloride have a better crystallinity and low optical transmittance.

ZnO thin films have been deposited on the glass substrates by spray pyrolysis method. In this work we have studied the structural and morphological properties of ZnO thin films. Zinc acetate dihydrate was used as the precursor material. The structural and morphological properties of the films have been investigated by X-ray diffraction and atomic force microscopy characterization methods. Scherrer's formula was used to calculate particle size. The thin films have (002) as the preferred orientation. The root mean square roughness of the films was calculated.