ABSTRACT Defects formation under UV-irradiation in the impurity-induced absorption bands at 4.2 K has been studied for crystals with and without traps for electrons (CsI:Pb and Eu2+-doped alkali halides, respectively). In both cases the results have been explained by an electron transfer from the impurity-perturbed halogen ion states, resulting in the appearance of electrons and holes in the crystal. In CsI:Pb, the electrons are trapped by lead ions and the holes are self-trapped. In Eu2+-doped crystals, the electrons and the holes recombine with the formation of excitons, whose decay results in the creation of Frenkel defects.
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