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Quantum corrected Boltzmann transport model for tunneling effects

Quantum corrected Boltzmann transport model for tunneling effects

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003., 2003
Abstract
ABSTRACT A quantum correction method based on the effective total potential used for the Monte Carlo simulation is presented. The Bohm-based and Wigner-based quantum correction models are unified under a single effective conduction-band edge (ECBE) method via a density-dependent quantum correction coefficient. The ECBE equation in thermal equilibrium as well as nonequilibrium is derived. This new equation is then applied to the MC simulation of quantum tunneling of a step potential barrier.

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