Laser atomic layer epitaxy

Journal of the Surface Finishing Society of Japan, 1989

The Review of Laser Engineering, 1996

Laser atomic layer epitaxy technique is reviewed, and growth characteristics and surface processes in laser Atomic Layer Epitaxy (ALE) are described. The self-limiting mechanism is the key to attain the ideal layer-by-layer controllability in growth rate. The self-limited growth is obtained in a wide range of several growth parameters. The self-limiting mechanism is induced by the site-selective decomposition of alkylgallium precursors (alkylgallium precursors decompose only at the As surface, but not at the Ga surface), and the direct absorption of laser light in the chemisorbed alkylgallium layer provides the site selectivity.

The Japan Society of Applied Physics, 2017

The Review of Laser Engineering, 2013

We studied the material dependence of electron acceleration with ultra-intense laser light at an intensity of 5 10 19 W/cm 2. Recent particle simulations have shown that the average energy of fast electrons stays lower than the prediction of ponderomotive scaling if intense laser light interacts directly with the target material. To control the fast electron energy spectra, we performed an experiment at the J-KAREN laser facility. The observed electron spectra show that the slope temperature for aluminum is 1.4 times higher than gold. The enhancement is strongly related to the average ioniation degree in the thin preplasma region in the PIC simulation result. The maximum proton energy reaches 10 MeV, and it shows the same values for Al, Cu and Au. The PIC simulations exhibit the values of the sheath Þ eld at the target rear for Al, Cu, and Au, all of which are the same as the experiment.

The Review of Laser Engineering, 2012

Laser-driven proton beam attracts many fields of potential applications because of its peculiar characteristics. However, in order to apply, for example, to the medical application, we need to increase the energy of the proton beam. We have been trying to increasing the energy of the laser-driven proton beam at JAEA. We established the beam transport line by using the beam optics of the conventional accelerator for the laser-driven MeV proton beam and have made beam transport test.

Molecular Science, 2011

SHINKU, 1993

Nippon Laser Igakkaishi, 1993

Journal of the Japan Institute of Metals, 2007

A novel low temperature crystallization method is proposed; the excimer laser annealing (ELA) of amorphous silicon (a Si) with a hydrogen modulation doped layer (ELHMD). The effects of hydrogen on low energy crystallization by conventional ELA and ELHMD were investigated. As the hydrogen concentration increases, the crystallinity of the polycrystalline silicon (poly Si) prepared at a low energy density improves. It is considered that the nucleation is enhanced by the desorption energy of hydrogen from the Si H 2 bond during the Si melting. In addition, the film exfoliation by H 2 burst can be suppressed using HMD a Si film.

Nippon Laser Igakkaishi, 1993