Nanostructure Formation Using Atomic-Layer Si Oxide Films

Hyōmen kagaku, 1998

Hyomen Kagaku, 2009

Hyōmen kagaku, 1999

The transactions of the Institute of Electrical Engineers of Japan.A, 1998

Preparation and Characterization of SrBi2Ta2O9 Thin Films by Low Oxygen Concentration Annealing Technique. Takaaki Suzuki, Non-member, Toshihide Nabatame, member, Kazutoshi Higashiyama, Non-member (Hitachi Ltd.

The Japan Society of Applied Physics, 2016

Journal of the Vacuum Society of Japan

Journal of Materials Science, 2004

The Review of Laser Engineering, 1996

Laser atomic layer epitaxy technique is reviewed, and growth characteristics and surface processes in laser Atomic Layer Epitaxy (ALE) are described. The self-limiting mechanism is the key to attain the ideal layer-by-layer controllability in growth rate. The self-limited growth is obtained in a wide range of several growth parameters. The self-limiting mechanism is induced by the site-selective decomposition of alkylgallium precursors (alkylgallium precursors decompose only at the As surface, but not at the Ga surface), and the direct absorption of laser light in the chemisorbed alkylgallium layer provides the site selectivity.

The Proceedings of Conference of Kanto Branch

Journal of the Japan Institute of Metals, 2009

We investigated the characteristics of a Si film with thicknesses of 1 and 50 nm those were irradiated by soft X ray from the undulator source. The cohesion of Si atoms were observed after X ray irradiation for 1 nm thick a Si, but it was not observed for 50 nm thick a Si. The average roughness Ra of 1 nm thick Si film were changed from 0.63 to 1.7 nm by soft X ray irradiation. The electric resistivity of it also increased corresponding to the change of the surface roughness. Although the TO phonon peak was not observed for 1 nm thick a Si, it was observed for 50 nm thick a Si. For these phenomena, the mechanism that the electron excitation by photon becomes the trigger of the cohesion was discussed.