Publisher Summary It is observed that the index of refraction of Indium Phosphide (InP) is reported over a wide range of photon energies, 1.2 meV to 20 eV. Various techniques are employed in these measurements, and there is an overlap in the data obtained from different sources. Cardona measures the reflectivity of InP in the 1-20-eV range. The sample surfaces are prepared by mechanical polishing with Linde A-5175 compound. The reflection spectra are measured and the samples are etched in a 1:1 solution of HNO3 and HCl to remove any damage and to improve the reflectivity. The reflection spectra are Kramers-Kronig (KK) analyzed. The 6-eV cutoff of Cardona's values of refractive index n and extinction coefficient k results from the availability of better measurements from 1.5 to 6 eV. Aspnes and Studna have obtained the optical constants of InP and of other semiconductors, through the use of spectroscopic ellipsometry.
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