The slow progress in the effectiveness of treatment
of diseases has stimulated treatment approach... more The slow progress in the effectiveness of treatment of diseases has stimulated treatment approaches from various disciplines in order to deliver therapeutics to the target tissues. From this, new ideas on controlling the efficacy of drugs have been generated. The aim of controlled-drug delivery system is to directly deliver drugs to the affected sites. Controlled-drug delivery with good targeting, precise amount and exact speed of release are crucial for drug effects. Therefore, in this study, the model of drug delivery system using PIC 16F873A and PIC 16F84A microcontrollers was developed and the effectiveness of releasing drug and distance at open area and with thicknesses of 0.85 m obstacle wall were determined. The development of Defence Mechanical Drug Delivery System (DmechD) model was divided into three parts that are 1) a capsule containing drug release system using DC geared motor, 2) Transmitter and Receiver Circuit using PIC 16F873A and PIC 16F84A microcontroller with IC Max 232, and a serial port RS 232, and 3) the interface control panel using visual basic 6.0 software to give the command control from work station. At the open area, the signal can be transmitted and received until 8 meters while only 6 meters at area with obstacle. At 6-meter distance, the releasing of drug was 4.72% delayed at obstacle area as compared to the open area. In this paper, a model for a controlled drug delivery capsule mechanical device was successfully developed and the drug release speed using PIC 16F873A and PIC 16F84A microcontrollers and DC geared motor was also discussed.
Gd-doped InGaN layers were prepared by plasma-assisted molecular-beam epitaxy in search of new fu... more Gd-doped InGaN layers were prepared by plasma-assisted molecular-beam epitaxy in search of new functional diluted magnetic semiconductors for their potential use in spintronics. The local structure around the Gd atoms was examined by the Gd LIII-edge of X-ray absorption fine structure. It was found that the majority of Gd atoms substitutionally occupied the cation sites in the InGaGdN layers. Clear hysteresis and saturation magnetization were observed from the magnetization versus field curves examined by means of a superconducting quantum interference device magnetometer at low and room temperatures. In addition, the incorporation of extra shallow donors by co-doping InGaN with both Gd and Si showed higher magnetization than the undoped InGaGdN.
InGaGdN single-layer and InGaGdN/GaN superlattice (SL) structures were grown on the MOVPE-grown G... more InGaGdN single-layer and InGaGdN/GaN superlattice (SL) structures were grown on the MOVPE-grown GaN (0 0 0 1) template substrates by radio frequency molecular beam epitaxy. X-ray diffraction spectroscopy and X-ray absorption fine structure data showed no existence of a secondary phase such as GdN or InN and the Gd atom occupation at the group-III site. Magnetization versus magnetic field curves exhibited clear hysteresis and saturation at both 10 and 300 K. The InGaGdN/GaN SL sample showed higher saturation magnetization per volume than the InGaGdN single-layer sample.
We report the investigation on the effects of Si-doping in the GaN barrier layers of InGaGdN/GaN ... more We report the investigation on the effects of Si-doping in the GaN barrier layers of InGaGdN/GaN multiple-quantum wells (MQWs) prepared by the molecular-beam epitaxy. X-ray diffraction results exhibit improved crystal and interfacial qualities for the Si-doped barrier samples as compared to the undoped barrier sample. The magnetic properties measured with the superconducting quantum interference device magnetometer indicate clear hysteresis and enhanced saturation magnetization with the increase of Si cell temperature for all the Si-doped barrier MQW samples.
Intermittent Gd-doping into InGaN has been attempted to obtain improved crystalline quality of th... more Intermittent Gd-doping into InGaN has been attempted to obtain improved crystalline quality of the InGaGdN samples for spintronic device applications. Intermittently Gd-doped InGaN samples with different layer thickness of the intercepting- undoped InGaN layers have been grown by the electron cyclotron resonance plasma-excited molecular-beam epitaxy (ECR-MBE) technique and their structural and magnetic properties were studied. The incorporation of Gd by this intermittent doping method was confirmed by the X-ray fine structure (XAFS) analysis. The rocking curves and the reciprocal space maps (RSM) of these samples revealed that under certain growth parameters, they exhibited formation of superlattice like structure. The superconducting quantum interference device magnetometer (SQUID) measurements revealed that they show room temperature ferromagnetism
Quaternary alloys InGaGdN with In content of 23% and 14% (Gd ≈ 1% in both) are successfully grown... more Quaternary alloys InGaGdN with In content of 23% and 14% (Gd ≈ 1% in both) are successfully grown with a sufficient quality to investigate the temperature behavior of photoluminescence (PL). A temperature-independent peak position is found for the sample with In content of 23%, while the sample with In content of 14% shows a weak temperature dependence. A theoretical model to explain the temperature dependence of the band gap of semiconductors is developed, where the inter-band mixing and the inner stress caused by the difference of the thermal expansion among the component alloys are taken into account.
InGaGdN layers and InGaGdN/GaN and InGaN/GaGdN superlattice (SL) structures were grown on (0001) ... more InGaGdN layers and InGaGdN/GaN and InGaN/GaGdN superlattice (SL) structures were grown on (0001) sapphire substrates or MOVPE-grown GaN templates by plasma-assisted molecular beam epitaxy. Si co-doping into InGaGdN and GaN barrier layers of SL structures were also conducted. Non-existence of secondary phase and the Gd atom substitution of Ga sites were confirmed by X-ray diffraction and X-ray absorption fine structure measurements. Luminescence properties of InGaGdN were also observed at room temperature with the emission peak energy red-shifts corresponding to the InN molar fraction. Clear hysteresis and saturation were observed in the magnetization versus magnetic field (M-H) curves measured at room temperature for the InGaGdN single-layers and InGaGdN/GaN SLs. The magnetic properties of the Gd-doped InGaN are understood to be closely related to the carrier-mediated magnetism.
Spintronics is an emerging field i n which the spin o f carriers in addition to the charge o f ca... more Spintronics is an emerging field i n which the spin o f carriers in addition to the charge o f carriers can be used to achieve new functionalities in electronic devices. The availability o f materials exhibiting ferromagnetism above room temperature is prerequisite for realizing such devices. Materials suitable for spintronic applications are desired to be compatible with conventional growth and fabrication techniques i n addition to exhibiting above room temperature ferromagnetic properties. I n this research, the growth o f InGaGdN epilayers have been achieved on (0001) sapphire substrates or metalorganic vapor phase epitaxy (M0VPE)-grown GaNIsapphire templates b y plasma-assisted molecular beam epitaxy (MBE) using elemental Ga, In, Gd and Si (co-doping) and gaseous N 2 as sources. Magnetic characterization o f the grown epilayers was performed b y a superconducting quantum interference device (SQUID) magnetometer. Ferromagnetic properties were observed at room temperature for this new type o f quaternary alloy material. Co-doping o f InGaGdN with Si was performed and increase i n shallow donor density as well as enhancement in ferromagnetic properties were achieved. Luminescence properties o f InGaGdN were also observed at room temperature with the emission peak energy red-shifts corresponding to the I n N molar fraction. Gd incorporation into InGaN epilayers were confirmed by X-ray absorption fine structure (XAFS) analysis revealing that ~d ? ' ions substitutionally occupy the cation sites o f Ga o f host material. M B E growth o f multi-layer structures i.e. InGaGdNIGaN multiple-quantum well (MQW) was also carried out and its characteristic were investigated. The InGaGdNIGaN M Q W samples showed clear hysteresis and clear saturation i n the magnetization versus magnetic field curve with larger magnetization per unit volume than the InGaNIGaGdN M Q W samples implying that carrier (electron) induced ferromagnetism occurs in such heterostructures. Better structural qualities have been achieved for the Si-doped barrier layers o f InGaGdNIGaN samples i n which more pronounced satellite peaks can be observed from the X-ray diffraction curves compared to the undoped barrier sample. Adding Si in the barrier layers has further enhanced the ferromagnetic properties as well as electrical properties of the MQW structure samples. This work has provided useful experimentally based insights into GaN-based diluted magnetic semiconductors (DMSs), resulting in the development of semiconducting materials that show room temperature ferromagnetism. These materials could pave the way for development of multifunctional microelectronic devices that integrate electrical, optical, and magnetic properties particularly for the development of spin-based-electronic devices.
doped InGaN films and superlattices (SLs) were synthesized by electron cyclotron resonance (ECR) ... more doped InGaN films and superlattices (SLs) were synthesized by electron cyclotron resonance (ECR) plasma-assisted molecular beam epitaxy (MBE) in the pursuit of new functional diluted magnetic semiconductors (DMSs). X-ray diffraction profiles of InGa(Gd)N epilayers indicated no phase separation with the avoidance of InN and GdN formation. Gd incorporation into the epilayers was confirmed by electron probe microscope analyzer. Local structure around the Gd atom was investigated by XAFS measurement using Gd LIII edge. It was shown that Gd atoms were mainly incorporated into the Ga sites in the InGaGdN epilayers.
A new approach of academic assessment has been implemented in electronic engineering course in Un... more A new approach of academic assessment has been implemented in electronic engineering course in Universiti Tun Hussein Onn Malaysia (UTHM). The online assessment method is used as an alternative to conventional assessment method used for years. Unlike the conventional approach, the online assessment does not require the students and lecturer to be face-to-face during the assessment and it also gives more flexibility for students to choose the assessment time. Given the ease in implementing this type of assessment, it still maintains high quality of questions given to students. At the end of the assessment period, it does attain the objective of the assessment and it also reflects the understanding of students towards the intended topic of the assessment. We conclude that the implementation of this assessment approach is a success to gauge the performance of students and it also can serve as an effective complement to conventional assessment approach.
Problem-based learning (PBL) has been introduced at Universiti Tun Hussein Onn Malaysia (UTHM) fo... more Problem-based learning (PBL) has been introduced at Universiti Tun Hussein Onn Malaysia (UTHM) for almost two years as a new innovative teaching method for engineering education. This paper highlights an alternative way of teaching mask design for MOSFET fabrication using PBL approach as a student centered-learning approach. The learning process has been successful using the Facts-Ideas-Learning Issues-Action Plans (FILA) chart as a PBL technique. Four groups of students have been assigned a project topic which meets the curriculum objectives and have industrial relevance. In this project, the students work independently; learning new Computer Aided Design (CAD) tools to create their own mask design using contact printing method. It is said to be a cost effective and simple technique for mask design. The students also have the opportunity to be involved "hands-on" in fabrication process of MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) where they perform the photolithography technique in order to transfer the pattern from the masks onto the wafer and hence complete the fabrication process. The fabrication process was done in UTHM Microelectronics Cleanroom. In addition, the students also prepare the presentation and the documentation of the project. The paper concludes by discussing the benefits and advantages to the students after completing the project.
Kajian ini dijalankan adalah be
rtujuan untuk merekabentuk dan me
mfabrikasi suatu transistor
... more Kajian ini dijalankan adalah be
rtujuan untuk merekabentuk dan me
mfabrikasi suatu transistor
pMOS (MOSFET saluran-p) dengan struktur
peruang-poli yang mempunyai panjang salur
0.25μm bagi mendapatkan ciri elektrik yang le
bih baik berbanding rekabentuk pMOS dengan
struktur LDD
(Lightly Doped Drain).
Dua komponen utama perisian ini iaitu ATHENA dan
ATLAS masing-masing digunakan unt
uk menjalankan simulasi pr
oses dan juga simulasi
peranti yang bertujuan untuk me
ndapatkan ciri-ciri elektrik
peranti yang direkabentuk.
Rekabentuk pMOS peruang-polisilikon yang
dihasilkan adalah berdasarkan kepada
rekabentuk PMOS 0.25μm dengan struktur L
DD yang telah direkabentuk dan difabrikasi
dengan kaedah yang sama sebelum ini. Pros
es merekabentuk dibahagikan kepada empat
varian iaitu varian 1, 2, 3 dan 4. Varian 1 da
n 2 masing-masing adalah mewakili rekabentuk
pMOS peruang-poli yang mengguna
kan teknik penyahlindapan (
annealing
) relau
konvensional dan penyahlindapan terma pant
as (RTP) untuk proses resapan SOD (
Spin On-
Dopant
) dalam pembentukan kawasan sumber dan
salir masing-masing. Manakala varian 3
dan 4 pula mewakili rekabentuk yang menggunaka
n teknik implantasi ion dopan untuk
membentuk sumber dan salir yang juga secara
penyahlindapan relau konvensional dan terma
pantas masing-masing. Kajian lebih tertumpu kepada
simulasi yang dijalankan ke atas varian
1 dan 2. Hasil daripada simulasi tersebut, di
dapati nilai voltan ambang bagi pMOS varian 1
ialah 0.742V manakala pMOS varian 2 pula ad
alah 0.725V. Sebagai kesimpulan rekabentuk
pMOS bersrtuktur peruang poli lebih baik pres
tasinya di samping pros
es fabrikasinya yang
lebih mudah berbanding dengan pMOS berstruktur LDD.
The slow progress in the effectiveness of treatment
of diseases has stimulated treatment approach... more The slow progress in the effectiveness of treatment of diseases has stimulated treatment approaches from various disciplines in order to deliver therapeutics to the target tissues. From this, new ideas on controlling the efficacy of drugs have been generated. The aim of controlled-drug delivery system is to directly deliver drugs to the affected sites. Controlled-drug delivery with good targeting, precise amount and exact speed of release are crucial for drug effects. Therefore, in this study, the model of drug delivery system using PIC 16F873A and PIC 16F84A microcontrollers was developed and the effectiveness of releasing drug and distance at open area and with thicknesses of 0.85 m obstacle wall were determined. The development of Defence Mechanical Drug Delivery System (DmechD) model was divided into three parts that are 1) a capsule containing drug release system using DC geared motor, 2) Transmitter and Receiver Circuit using PIC 16F873A and PIC 16F84A microcontroller with IC Max 232, and a serial port RS 232, and 3) the interface control panel using visual basic 6.0 software to give the command control from work station. At the open area, the signal can be transmitted and received until 8 meters while only 6 meters at area with obstacle. At 6-meter distance, the releasing of drug was 4.72% delayed at obstacle area as compared to the open area. In this paper, a model for a controlled drug delivery capsule mechanical device was successfully developed and the drug release speed using PIC 16F873A and PIC 16F84A microcontrollers and DC geared motor was also discussed.
Gd-doped InGaN layers were prepared by plasma-assisted molecular-beam epitaxy in search of new fu... more Gd-doped InGaN layers were prepared by plasma-assisted molecular-beam epitaxy in search of new functional diluted magnetic semiconductors for their potential use in spintronics. The local structure around the Gd atoms was examined by the Gd LIII-edge of X-ray absorption fine structure. It was found that the majority of Gd atoms substitutionally occupied the cation sites in the InGaGdN layers. Clear hysteresis and saturation magnetization were observed from the magnetization versus field curves examined by means of a superconducting quantum interference device magnetometer at low and room temperatures. In addition, the incorporation of extra shallow donors by co-doping InGaN with both Gd and Si showed higher magnetization than the undoped InGaGdN.
InGaGdN single-layer and InGaGdN/GaN superlattice (SL) structures were grown on the MOVPE-grown G... more InGaGdN single-layer and InGaGdN/GaN superlattice (SL) structures were grown on the MOVPE-grown GaN (0 0 0 1) template substrates by radio frequency molecular beam epitaxy. X-ray diffraction spectroscopy and X-ray absorption fine structure data showed no existence of a secondary phase such as GdN or InN and the Gd atom occupation at the group-III site. Magnetization versus magnetic field curves exhibited clear hysteresis and saturation at both 10 and 300 K. The InGaGdN/GaN SL sample showed higher saturation magnetization per volume than the InGaGdN single-layer sample.
We report the investigation on the effects of Si-doping in the GaN barrier layers of InGaGdN/GaN ... more We report the investigation on the effects of Si-doping in the GaN barrier layers of InGaGdN/GaN multiple-quantum wells (MQWs) prepared by the molecular-beam epitaxy. X-ray diffraction results exhibit improved crystal and interfacial qualities for the Si-doped barrier samples as compared to the undoped barrier sample. The magnetic properties measured with the superconducting quantum interference device magnetometer indicate clear hysteresis and enhanced saturation magnetization with the increase of Si cell temperature for all the Si-doped barrier MQW samples.
Intermittent Gd-doping into InGaN has been attempted to obtain improved crystalline quality of th... more Intermittent Gd-doping into InGaN has been attempted to obtain improved crystalline quality of the InGaGdN samples for spintronic device applications. Intermittently Gd-doped InGaN samples with different layer thickness of the intercepting- undoped InGaN layers have been grown by the electron cyclotron resonance plasma-excited molecular-beam epitaxy (ECR-MBE) technique and their structural and magnetic properties were studied. The incorporation of Gd by this intermittent doping method was confirmed by the X-ray fine structure (XAFS) analysis. The rocking curves and the reciprocal space maps (RSM) of these samples revealed that under certain growth parameters, they exhibited formation of superlattice like structure. The superconducting quantum interference device magnetometer (SQUID) measurements revealed that they show room temperature ferromagnetism
Quaternary alloys InGaGdN with In content of 23% and 14% (Gd ≈ 1% in both) are successfully grown... more Quaternary alloys InGaGdN with In content of 23% and 14% (Gd ≈ 1% in both) are successfully grown with a sufficient quality to investigate the temperature behavior of photoluminescence (PL). A temperature-independent peak position is found for the sample with In content of 23%, while the sample with In content of 14% shows a weak temperature dependence. A theoretical model to explain the temperature dependence of the band gap of semiconductors is developed, where the inter-band mixing and the inner stress caused by the difference of the thermal expansion among the component alloys are taken into account.
InGaGdN layers and InGaGdN/GaN and InGaN/GaGdN superlattice (SL) structures were grown on (0001) ... more InGaGdN layers and InGaGdN/GaN and InGaN/GaGdN superlattice (SL) structures were grown on (0001) sapphire substrates or MOVPE-grown GaN templates by plasma-assisted molecular beam epitaxy. Si co-doping into InGaGdN and GaN barrier layers of SL structures were also conducted. Non-existence of secondary phase and the Gd atom substitution of Ga sites were confirmed by X-ray diffraction and X-ray absorption fine structure measurements. Luminescence properties of InGaGdN were also observed at room temperature with the emission peak energy red-shifts corresponding to the InN molar fraction. Clear hysteresis and saturation were observed in the magnetization versus magnetic field (M-H) curves measured at room temperature for the InGaGdN single-layers and InGaGdN/GaN SLs. The magnetic properties of the Gd-doped InGaN are understood to be closely related to the carrier-mediated magnetism.
Spintronics is an emerging field i n which the spin o f carriers in addition to the charge o f ca... more Spintronics is an emerging field i n which the spin o f carriers in addition to the charge o f carriers can be used to achieve new functionalities in electronic devices. The availability o f materials exhibiting ferromagnetism above room temperature is prerequisite for realizing such devices. Materials suitable for spintronic applications are desired to be compatible with conventional growth and fabrication techniques i n addition to exhibiting above room temperature ferromagnetic properties. I n this research, the growth o f InGaGdN epilayers have been achieved on (0001) sapphire substrates or metalorganic vapor phase epitaxy (M0VPE)-grown GaNIsapphire templates b y plasma-assisted molecular beam epitaxy (MBE) using elemental Ga, In, Gd and Si (co-doping) and gaseous N 2 as sources. Magnetic characterization o f the grown epilayers was performed b y a superconducting quantum interference device (SQUID) magnetometer. Ferromagnetic properties were observed at room temperature for this new type o f quaternary alloy material. Co-doping o f InGaGdN with Si was performed and increase i n shallow donor density as well as enhancement in ferromagnetic properties were achieved. Luminescence properties o f InGaGdN were also observed at room temperature with the emission peak energy red-shifts corresponding to the I n N molar fraction. Gd incorporation into InGaN epilayers were confirmed by X-ray absorption fine structure (XAFS) analysis revealing that ~d ? ' ions substitutionally occupy the cation sites o f Ga o f host material. M B E growth o f multi-layer structures i.e. InGaGdNIGaN multiple-quantum well (MQW) was also carried out and its characteristic were investigated. The InGaGdNIGaN M Q W samples showed clear hysteresis and clear saturation i n the magnetization versus magnetic field curve with larger magnetization per unit volume than the InGaNIGaGdN M Q W samples implying that carrier (electron) induced ferromagnetism occurs in such heterostructures. Better structural qualities have been achieved for the Si-doped barrier layers o f InGaGdNIGaN samples i n which more pronounced satellite peaks can be observed from the X-ray diffraction curves compared to the undoped barrier sample. Adding Si in the barrier layers has further enhanced the ferromagnetic properties as well as electrical properties of the MQW structure samples. This work has provided useful experimentally based insights into GaN-based diluted magnetic semiconductors (DMSs), resulting in the development of semiconducting materials that show room temperature ferromagnetism. These materials could pave the way for development of multifunctional microelectronic devices that integrate electrical, optical, and magnetic properties particularly for the development of spin-based-electronic devices.
doped InGaN films and superlattices (SLs) were synthesized by electron cyclotron resonance (ECR) ... more doped InGaN films and superlattices (SLs) were synthesized by electron cyclotron resonance (ECR) plasma-assisted molecular beam epitaxy (MBE) in the pursuit of new functional diluted magnetic semiconductors (DMSs). X-ray diffraction profiles of InGa(Gd)N epilayers indicated no phase separation with the avoidance of InN and GdN formation. Gd incorporation into the epilayers was confirmed by electron probe microscope analyzer. Local structure around the Gd atom was investigated by XAFS measurement using Gd LIII edge. It was shown that Gd atoms were mainly incorporated into the Ga sites in the InGaGdN epilayers.
A new approach of academic assessment has been implemented in electronic engineering course in Un... more A new approach of academic assessment has been implemented in electronic engineering course in Universiti Tun Hussein Onn Malaysia (UTHM). The online assessment method is used as an alternative to conventional assessment method used for years. Unlike the conventional approach, the online assessment does not require the students and lecturer to be face-to-face during the assessment and it also gives more flexibility for students to choose the assessment time. Given the ease in implementing this type of assessment, it still maintains high quality of questions given to students. At the end of the assessment period, it does attain the objective of the assessment and it also reflects the understanding of students towards the intended topic of the assessment. We conclude that the implementation of this assessment approach is a success to gauge the performance of students and it also can serve as an effective complement to conventional assessment approach.
Problem-based learning (PBL) has been introduced at Universiti Tun Hussein Onn Malaysia (UTHM) fo... more Problem-based learning (PBL) has been introduced at Universiti Tun Hussein Onn Malaysia (UTHM) for almost two years as a new innovative teaching method for engineering education. This paper highlights an alternative way of teaching mask design for MOSFET fabrication using PBL approach as a student centered-learning approach. The learning process has been successful using the Facts-Ideas-Learning Issues-Action Plans (FILA) chart as a PBL technique. Four groups of students have been assigned a project topic which meets the curriculum objectives and have industrial relevance. In this project, the students work independently; learning new Computer Aided Design (CAD) tools to create their own mask design using contact printing method. It is said to be a cost effective and simple technique for mask design. The students also have the opportunity to be involved "hands-on" in fabrication process of MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) where they perform the photolithography technique in order to transfer the pattern from the masks onto the wafer and hence complete the fabrication process. The fabrication process was done in UTHM Microelectronics Cleanroom. In addition, the students also prepare the presentation and the documentation of the project. The paper concludes by discussing the benefits and advantages to the students after completing the project.
Kajian ini dijalankan adalah be
rtujuan untuk merekabentuk dan me
mfabrikasi suatu transistor
... more Kajian ini dijalankan adalah be
rtujuan untuk merekabentuk dan me
mfabrikasi suatu transistor
pMOS (MOSFET saluran-p) dengan struktur
peruang-poli yang mempunyai panjang salur
0.25μm bagi mendapatkan ciri elektrik yang le
bih baik berbanding rekabentuk pMOS dengan
struktur LDD
(Lightly Doped Drain).
Dua komponen utama perisian ini iaitu ATHENA dan
ATLAS masing-masing digunakan unt
uk menjalankan simulasi pr
oses dan juga simulasi
peranti yang bertujuan untuk me
ndapatkan ciri-ciri elektrik
peranti yang direkabentuk.
Rekabentuk pMOS peruang-polisilikon yang
dihasilkan adalah berdasarkan kepada
rekabentuk PMOS 0.25μm dengan struktur L
DD yang telah direkabentuk dan difabrikasi
dengan kaedah yang sama sebelum ini. Pros
es merekabentuk dibahagikan kepada empat
varian iaitu varian 1, 2, 3 dan 4. Varian 1 da
n 2 masing-masing adalah mewakili rekabentuk
pMOS peruang-poli yang mengguna
kan teknik penyahlindapan (
annealing
) relau
konvensional dan penyahlindapan terma pant
as (RTP) untuk proses resapan SOD (
Spin On-
Dopant
) dalam pembentukan kawasan sumber dan
salir masing-masing. Manakala varian 3
dan 4 pula mewakili rekabentuk yang menggunaka
n teknik implantasi ion dopan untuk
membentuk sumber dan salir yang juga secara
penyahlindapan relau konvensional dan terma
pantas masing-masing. Kajian lebih tertumpu kepada
simulasi yang dijalankan ke atas varian
1 dan 2. Hasil daripada simulasi tersebut, di
dapati nilai voltan ambang bagi pMOS varian 1
ialah 0.742V manakala pMOS varian 2 pula ad
alah 0.725V. Sebagai kesimpulan rekabentuk
pMOS bersrtuktur peruang poli lebih baik pres
tasinya di samping pros
es fabrikasinya yang
lebih mudah berbanding dengan pMOS berstruktur LDD.
Uploads
Papers by Siti Nooraya
of diseases has stimulated treatment approaches from various
disciplines in order to deliver therapeutics to the target tissues.
From this, new ideas on controlling the efficacy of drugs have
been generated. The aim of controlled-drug delivery system is
to directly deliver drugs to the affected sites. Controlled-drug
delivery with good targeting, precise amount and exact speed of
release are crucial for drug effects. Therefore, in this study, the
model of drug delivery system using PIC 16F873A and PIC
16F84A microcontrollers was developed and the effectiveness of
releasing drug and distance at open area and with thicknesses
of 0.85 m obstacle wall were determined. The development of
Defence Mechanical Drug Delivery System (DmechD) model
was divided into three parts that are 1) a capsule containing
drug release system using DC geared motor, 2) Transmitter
and Receiver Circuit using PIC 16F873A and PIC 16F84A
microcontroller with IC Max 232, and a serial port RS 232, and
3) the interface control panel using visual basic 6.0 software to
give the command control from work station. At the open area,
the signal can be transmitted and received until 8 meters while
only 6 meters at area with obstacle. At 6-meter distance, the
releasing of drug was 4.72% delayed at obstacle area as
compared to the open area. In this paper, a model for a
controlled drug delivery capsule mechanical device was
successfully developed and the drug release speed using PIC
16F873A and PIC 16F84A microcontrollers and DC geared
motor was also discussed.
rtujuan untuk merekabentuk dan me
mfabrikasi suatu transistor
pMOS (MOSFET saluran-p) dengan struktur
peruang-poli yang mempunyai panjang salur
0.25μm bagi mendapatkan ciri elektrik yang le
bih baik berbanding rekabentuk pMOS dengan
struktur LDD
(Lightly Doped Drain).
Dua komponen utama perisian ini iaitu ATHENA dan
ATLAS masing-masing digunakan unt
uk menjalankan simulasi pr
oses dan juga simulasi
peranti yang bertujuan untuk me
ndapatkan ciri-ciri elektrik
peranti yang direkabentuk.
Rekabentuk pMOS peruang-polisilikon yang
dihasilkan adalah berdasarkan kepada
rekabentuk PMOS 0.25μm dengan struktur L
DD yang telah direkabentuk dan difabrikasi
dengan kaedah yang sama sebelum ini. Pros
es merekabentuk dibahagikan kepada empat
varian iaitu varian 1, 2, 3 dan 4. Varian 1 da
n 2 masing-masing adalah mewakili rekabentuk
pMOS peruang-poli yang mengguna
kan teknik penyahlindapan (
annealing
) relau
konvensional dan penyahlindapan terma pant
as (RTP) untuk proses resapan SOD (
Spin On-
Dopant
) dalam pembentukan kawasan sumber dan
salir masing-masing. Manakala varian 3
dan 4 pula mewakili rekabentuk yang menggunaka
n teknik implantasi ion dopan untuk
membentuk sumber dan salir yang juga secara
penyahlindapan relau konvensional dan terma
pantas masing-masing. Kajian lebih tertumpu kepada
simulasi yang dijalankan ke atas varian
1 dan 2. Hasil daripada simulasi tersebut, di
dapati nilai voltan ambang bagi pMOS varian 1
ialah 0.742V manakala pMOS varian 2 pula ad
alah 0.725V. Sebagai kesimpulan rekabentuk
pMOS bersrtuktur peruang poli lebih baik pres
tasinya di samping pros
es fabrikasinya yang
lebih mudah berbanding dengan pMOS berstruktur LDD.
of diseases has stimulated treatment approaches from various
disciplines in order to deliver therapeutics to the target tissues.
From this, new ideas on controlling the efficacy of drugs have
been generated. The aim of controlled-drug delivery system is
to directly deliver drugs to the affected sites. Controlled-drug
delivery with good targeting, precise amount and exact speed of
release are crucial for drug effects. Therefore, in this study, the
model of drug delivery system using PIC 16F873A and PIC
16F84A microcontrollers was developed and the effectiveness of
releasing drug and distance at open area and with thicknesses
of 0.85 m obstacle wall were determined. The development of
Defence Mechanical Drug Delivery System (DmechD) model
was divided into three parts that are 1) a capsule containing
drug release system using DC geared motor, 2) Transmitter
and Receiver Circuit using PIC 16F873A and PIC 16F84A
microcontroller with IC Max 232, and a serial port RS 232, and
3) the interface control panel using visual basic 6.0 software to
give the command control from work station. At the open area,
the signal can be transmitted and received until 8 meters while
only 6 meters at area with obstacle. At 6-meter distance, the
releasing of drug was 4.72% delayed at obstacle area as
compared to the open area. In this paper, a model for a
controlled drug delivery capsule mechanical device was
successfully developed and the drug release speed using PIC
16F873A and PIC 16F84A microcontrollers and DC geared
motor was also discussed.
rtujuan untuk merekabentuk dan me
mfabrikasi suatu transistor
pMOS (MOSFET saluran-p) dengan struktur
peruang-poli yang mempunyai panjang salur
0.25μm bagi mendapatkan ciri elektrik yang le
bih baik berbanding rekabentuk pMOS dengan
struktur LDD
(Lightly Doped Drain).
Dua komponen utama perisian ini iaitu ATHENA dan
ATLAS masing-masing digunakan unt
uk menjalankan simulasi pr
oses dan juga simulasi
peranti yang bertujuan untuk me
ndapatkan ciri-ciri elektrik
peranti yang direkabentuk.
Rekabentuk pMOS peruang-polisilikon yang
dihasilkan adalah berdasarkan kepada
rekabentuk PMOS 0.25μm dengan struktur L
DD yang telah direkabentuk dan difabrikasi
dengan kaedah yang sama sebelum ini. Pros
es merekabentuk dibahagikan kepada empat
varian iaitu varian 1, 2, 3 dan 4. Varian 1 da
n 2 masing-masing adalah mewakili rekabentuk
pMOS peruang-poli yang mengguna
kan teknik penyahlindapan (
annealing
) relau
konvensional dan penyahlindapan terma pant
as (RTP) untuk proses resapan SOD (
Spin On-
Dopant
) dalam pembentukan kawasan sumber dan
salir masing-masing. Manakala varian 3
dan 4 pula mewakili rekabentuk yang menggunaka
n teknik implantasi ion dopan untuk
membentuk sumber dan salir yang juga secara
penyahlindapan relau konvensional dan terma
pantas masing-masing. Kajian lebih tertumpu kepada
simulasi yang dijalankan ke atas varian
1 dan 2. Hasil daripada simulasi tersebut, di
dapati nilai voltan ambang bagi pMOS varian 1
ialah 0.742V manakala pMOS varian 2 pula ad
alah 0.725V. Sebagai kesimpulan rekabentuk
pMOS bersrtuktur peruang poli lebih baik pres
tasinya di samping pros
es fabrikasinya yang
lebih mudah berbanding dengan pMOS berstruktur LDD.