Papers by Giuseppe Iannaccone
We present a numerical study of shot noise in diffusive mesoscopic conductors, aimed at a quantit... more We present a numerical study of shot noise in diffusive mesoscopic conductors, aimed at a quantitative understanding of the conditions needed for achieving the 1/3 suppression factor predicted from random matrix theory. We investigate both two-dimensional and three-dimensional conductors, with a hard-wall model in which elastic scatterers are represented by randomly positioned obstacles. Finally, we discuss the effect on noise of obstacles of finite height, comparable with the Fermi level, and comment on the possibility of similar effects in wires obtained by means of electrostatic depletion in modulation doped semiconductor heterostructures.
We present a code for the quantum simulation of ballistic MOSFETs in two-dimensions, which has be... more We present a code for the quantum simulation of ballistic MOSFETs in two-dimensions, which has been applied to the simulation of a so-called "Well-tempered" MOS-FET with channel length of 25 nm. Electron confinement at the Si/SiO ¾ interface and effective mass anisotropy are properly taken into account. In the assumption of negligible phonon scattering in nanoscale devices, transport is assumed to be purely ballistic. We show that our code can provide the relevant DC characteristics of the device, and can be a useful tool for the extraction of physics-based compact models of nanoscale MOSFETs.
Carbon Nanotube Field Effect Transistors (CNT-FETs) are considered a promising alternative to CMO... more Carbon Nanotube Field Effect Transistors (CNT-FETs) are considered a promising alternative to CMOS technology at end of the ITRS Roadmap . Fabrication technology still poses serious challenges, such as the selection of semiconducting CNTs, the poor control of the contacts and the large CNT diameter dispersion. As with silicon technology, device simulation tools capable to address very general structures with limited computational resources, can represent a precious tool to explore device architectures, and provide fabrication guidelines. In this work, we present a three-dimensional code that can deal with general architectures, based on the self-consistent solution of the Poisson and Schrödinger equations, within the NEGF formalism, using a tight-binding Hamiltonian with an atomistic (p z -orbitals) basis set both in the real [2] and in the mode space, by means of the Recursive Green's Functions method. In particular, the mode space approach is based on the reduction of the order of the real space Hamiltonian matrix, by means of a simple basis transformation. Compared to other mode space approaches, the one we propose intrinsically includes intersubband scattering, which is present when the coaxial symmetry of the potential is broken.
In this work we analyze the noise properties of the current at the hard-breakdown of a 6 nm thick... more In this work we analyze the noise properties of the current at the hard-breakdown of a 6 nm thick oxide in an MOS structure. It is shown that in the quantum point contact case single fluctuators, probably consisting of electron traps inside the oxide, can be resolved, whereas the current noise at the thermal breakdown presents a 1 /f spectrum, due to the averaging process between many of these fluctuators. 2001 Published by Elsevier Science B.V.
We present the design of a flash memory for passive RFID transponders, implemented in a standard ... more We present the design of a flash memory for passive RFID transponders, implemented in a standard - single poly - 0.35 mum CMOS process. The memory has 128 bits, sufficient for example to contain the EPC code for Class 0 tags, and is able to perform a complete read operation of all 128 bits with an access time of about 10 ms and a power consumption of only 160 nW. In the erase/program mode Fowler-Nordheim tunneling is used, and all 128 bits can be written in 0.8 s with a power consumption of about 3 muW. Such power causes an acceptable reduction of the operating range during a write operation to 1.74 m in the 2.45 GHz ISM band and 4.66 m in the UHF ISM band, for a transmitter EIRP of 500 mW, with respect to the read operating range, where 4 m at 2.45 GHz and 10.5 m at 916 MHz are achieved
A voltage reference has been implemented in a standard 0.35 mum CMOS process. A temperature coeff... more A voltage reference has been implemented in a standard 0.35 mum CMOS process. A temperature coefficient of 12 ppm/degC is achieved in virtue of a complete suppression of the temperature dependence of the carrier mobility. The line sensitivity is 0.46 %/V and the maximum supply current, measured at 80degC, is 130 nA. The PSSR at 100 Hz and 10 MHz is -59 dB and -52 dB, respectively
The customer domain of the smart grid naturally blends with smart home and smart building systems... more The customer domain of the smart grid naturally blends with smart home and smart building systems, but typical proposed approaches are “distributor-centric” rather than “customer-centric,” undermining user acceptance, and are often poorly scalable. To solve this problem, we propose a detailed architecture and an implementation of a “last-meter” smart grid-the portion of the smart grid on customer premises-embedded in an internet-of-things (IoT) platform. Our approach has four aspects of novelty and advantages with respect to the state of the art: 1) seamless integration of smart grid with smart home applications in the same infrastructure; 2) data gathering from heterogeneous sensor communication protocols; 3) secure and customized data access; and 4) univocal sensor and actuator mapping to a common abstraction layer on which additional concurrent applications can be built. A demonstrator has been built and tested with purposely-developed ZigBee smart meters and gateways, a distribu...
Theory, Experimentation and Prospects, 2006
Uploads
Papers by Giuseppe Iannaccone