
Rodrigo Picos
I received the M.S. and Ph.D. degrees from the Universitat de les Illes Balears (UIB), Palma (Illes Balears), Spain, in 1998 and 2006, respectively.
I am currently an Associate Professor with the Physics Department, UIB. My research interests include memristive systems and compact-device modeling, as well as analog circuit design and test.
I have authored or co-authored more than 120 journal and conference papers as well as participated, as a researcher, in several national and international (EU) funded projects.
Supervisors: Eugeni Garcia-Moreno and Miquel Roca
I am currently an Associate Professor with the Physics Department, UIB. My research interests include memristive systems and compact-device modeling, as well as analog circuit design and test.
I have authored or co-authored more than 120 journal and conference papers as well as participated, as a researcher, in several national and international (EU) funded projects.
Supervisors: Eugeni Garcia-Moreno and Miquel Roca
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Papers by Rodrigo Picos
capacitors, were first explicitly described in [1]. Their main characteristics are: (i) if there is no voltage
across its terminals, there is no current; and (ii) the I-V curve shows a hysteresis that depends on the
frequency of the forcing signal. Equations (1)-(3) describe the most general class of memristors [2],
including a “hidden” set of controlling variables (for instance, temperature).
v(t)=R(Q,X)i(t) (1)
dX/dt=g(Q,I,X) (2)
dQ/dt=i(t) (3)
v(t) and i(t) are respectively the voltage and the current in the device, R(Q,X) is the memristance of the
device, X is the set of controlling variables. A special case of (2) is the POP equation (power-off
portrait), which is the case of no external forcing stimuli. For a memristor to be used as a memory
(as ReRAMs or PCM are), the POP equation must be zero. Otherwise, X and, as a consequence,
R(Q,X) will change with time. An example of this are synapses, that show plasticity, this meaning
that they are capable of forgetting past stimuli.
capacitors, were first explicitly described in [1]. Their main characteristics are: (i) if there is no voltage
across its terminals, there is no current; and (ii) the I-V curve shows a hysteresis that depends on the
frequency of the forcing signal. Equations (1)-(3) describe the most general class of memristors [2],
including a “hidden” set of controlling variables (for instance, temperature).
v(t)=R(Q,X)i(t) (1)
dX/dt=g(Q,I,X) (2)
dQ/dt=i(t) (3)
v(t) and i(t) are respectively the voltage and the current in the device, R(Q,X) is the memristance of the
device, X is the set of controlling variables. A special case of (2) is the POP equation (power-off
portrait), which is the case of no external forcing stimuli. For a memristor to be used as a memory
(as ReRAMs or PCM are), the POP equation must be zero. Otherwise, X and, as a consequence,
R(Q,X) will change with time. An example of this are synapses, that show plasticity, this meaning
that they are capable of forgetting past stimuli.