Xingguang Zhu

Southwest Jiaotong University, School of Electrical Engineering, Graduate Student

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Simone Hochgreb

University of Cambridge

Galal Nadim

Fayoum University

Suresh Muthusamy

Kongu Engineering College

Yasna L Schifferli

Heather Rosmarin

Hakeem Niyas

Rajiv Gandhi Institute Of Petroleum Technology

Mayra Zahra

State University of Jakarta

Ali Durusu

Yildiz Technical University

dara lamerdian

State University of Jakarta

Akram A A Al-Khazzar

University of Baghdad

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Papers by Xingguang Zhu

The effect of oxide impurities on the performance of 4H-SiC MOSFETs

Bulletin of the American Physical Society, Jan 1, 2007

Recent studies for SiC [1] show that oxidation in the presence of metal impurities (especially Na... more

The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H-SiC MOS devices

Solid-State …, Jan 1, 2011

We report results on the introduction of nitrogen at the SiC/SiO2 interface using a plasma proces... more

Alternative Growth and Interface Passivation Techniques for SiO2 on 4H-SiC

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Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs

… IEEE Transactions on, Jan 1, 2011

The direct impact of the SiO 2 /4H-SiC interface state density (D it ) on the channel mobility of... more The direct impact of the SiO 2 /4H-SiC interface state density (D it ) on the channel mobility of lateral field-effect transistors is studied by tailoring the trap distribution via nitridation of the thermal gate oxide. We observe that mobility scales like the inverse of the charged state density, which is consistent with Coulomb-scattering-limited transport at the interface. We also conclude that the D it further impacts even the best devices by screening the gate potential, yielding small subthreshold swings and poor turn-ON characteristics.

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Nitridation of the 4H-SiC/Oxide interface via NO anneal and plasma injection

… , 2009. ISDRS'09. …, Jan 1, 2009

Abstract In this paper, nitridation of thermally oxidized (0001) 4H-SiC will be discussed using n... more

Alternative growth and interface passivation techniques for silicon dioxide on 4H-silicon carbide

The silicon-based microelectronic industry has played an essential role in the development of mod... more

Three Dimensional Heat Transfer Temperature Distribution of Thrust Bearing [J]

JOURNAL OF XI'AN JIAOTONG UNIVERSITY, Jan 1, 1998

A conjugate solution method is used where temperature and heat flux continuity are invoked at the... more

Structure and stoichiometry of (0001) 4H–SiC/oxide interface

Applied Physics Letters, Jan 1, 2010

The 4H -SiC/ SiO 2 interface is a major obstacle that hampers SiC device applications. The nature... more The 4H -SiC/ SiO 2 interface is a major obstacle that hampers SiC device applications. The nature of the transition region stoichiometry and structure need to be elucidated to both understand and improve such devices. In this paper, we use medium energy ion scattering on device grade structures to examine critical aspects of this dielectric/semiconductor structure. Our findings indicate no excess C greater than 1.8ϫ 10 14 cm −2 from the oxide surface down to a few monolayers beneath the SiC/ SiO 2 interface, setting limits on the previously predicted nonstoichiometric transition region on the dielectric side.

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Britain and Russia Partition Pamir and the Standpoint of Qing government [J]

CHINA'S BORDERLAND HISTORY AND …, Jan 1, 2000

This paper particularly discusses the course that Britain and Russia Partitioned Pamir in Central... more

The effect of oxide impurities on the performance of 4H-SiC MOSFETs

Bulletin of the American Physical Society, Jan 1, 2007

Recent studies for SiC [1] show that oxidation in the presence of metal impurities (especially Na... more

The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H-SiC MOS devices

Solid-State …, Jan 1, 2011

We report results on the introduction of nitrogen at the SiC/SiO2 interface using a plasma proces... more

Alternative Growth and Interface Passivation Techniques for SiO2 on 4H-SiC

Download

Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs

… IEEE Transactions on, Jan 1, 2011

Download

Nitridation of the 4H-SiC/Oxide interface via NO anneal and plasma injection

… , 2009. ISDRS'09. …, Jan 1, 2009

Abstract In this paper, nitridation of thermally oxidized (0001) 4H-SiC will be discussed using n... more

Alternative growth and interface passivation techniques for silicon dioxide on 4H-silicon carbide

The silicon-based microelectronic industry has played an essential role in the development of mod... more

Three Dimensional Heat Transfer Temperature Distribution of Thrust Bearing [J]

JOURNAL OF XI'AN JIAOTONG UNIVERSITY, Jan 1, 1998

A conjugate solution method is used where temperature and heat flux continuity are invoked at the... more

Structure and stoichiometry of (0001) 4H–SiC/oxide interface

Applied Physics Letters, Jan 1, 2010

Download

Britain and Russia Partition Pamir and the Standpoint of Qing government [J]

CHINA'S BORDERLAND HISTORY AND …, Jan 1, 2000

This paper particularly discusses the course that Britain and Russia Partitioned Pamir in Central... more

Xingguang Zhu

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