Ultrafast X-Ray Diffraction Maps Thermal Transport In GaN Thin Films (MIT, SLAC, Stanford, Argonne)


Researchers from MIT, SLAC, Stanford University, and Argonne National Laboratory published a technical paper titled “Spatiotemporal mapping of anisotropic thermal transport in GaN thin films via ultrafast X-ray diffraction.” Abstract Excerpt: The paper presents a “non-contact, spatiotemporal-resolved ultrafast X-ray diffraction method to extract in-plane thermal conductivity and therma... » read more

GaN Power Devices Power Up


Key Takeaways: GaN devices are gaining traction due to their ability to tolerate higher voltages. New approaches such as chiplets offer faster switching with less loss. The first applications to benefit from GaN will be low-voltage consumer devices; industrial applications require more work. As electrical power displaces fossil fuels in more applications, system designers ne... » read more

Research Bits: Oct. 7


Doping oxide insulator improves SiGe conductivity Researchers from TU Wien, Johannes Kepler University Linz, and TU Bergakademie Freiberg manufactured a silicon-germanium (SiGe) transistor using an alternative approach that involves doping the insulating oxide layer to produce a long-range effect that extends into the semiconductor. Called modulation acceptor doping (MAD), the technique ena... » read more

The Race To Replace Silicon


For over 75 years, silicon has been the dominant material in the evolution of modern electronics, powering everything from smartphones to satellites. But as chipmakers push toward smaller nodes, higher power efficiency, and quantum-scale precision, a pressing question is echoing across fabs and R&D labs worldwide: Is it time to move beyond silicon? In this blog post, we explore the growi... » read more

The Impact Of Parameter Uncertainties On The Lifetime Prediction of Power Devices (TU Delft)


A new technical paper titled "Impact of Parameter Uncertainties on Power Electronic Device Lifetime Predictions" was published by researchers at TU Delft. Abstract "Properly addressing uncertainties in reliability analysis is essential for realistic lifetime predictions of power devices. This paper investigates parameter uncertainties on the lifetime estimation of power devices using an emp... » read more

Research Bits: June 3


Imaging power electronics Researchers from the Institute of Science Tokyo, Harvard University, and Hitachi used diamond quantum sensors to analyze the magnetization response of soft magnetic materials used in power electronics. The method can simultaneously image both the amplitude and phase of AC stray fields over a wide frequency range up to 2.3 MHz. It uses a diamond quantum sensor with ... » read more

Simulations à la Carte: Infusing SPICE Models For A Tasty Design Experience


Have you ever noticed how the simplest dishes become unforgettable with just the right seasoning? As an Ecuadorian, I’ve learned this firsthand. A touch of “ají”—a traditional chili sauce—can transform any meal into something extraordinary. The tamarillo-based hot sauce is my personal favorite. It’s not just a condiment; it’s an experience. And when it comes to power electronics,... » read more

Board-Level Packaging Method For Device Encapsulation To Enable Water Immersion Cooling


A new technical paper titled "Thermally Conductive Electrically Insulating Electronics Packaging for Water Immersion Cooling" was published by researchers at University of Illinois, Urbana, University of Arkansas and UC Berkeley. Abstract "Power densification is making thermal design a key step in the development of future electrical devices. Systems such as data centers and electric vehicl... » read more

Challenges In Powering Electrification With GaN And SiC


The wish list of device properties that designers of power management systems would like to have is lengthy, but no single material is yet sufficient for the full range of power control applications. For control transistors to handle power surges, breakdown voltages should be at least triple the expected operating voltage — 1.2 kilovolts or more for many electric vehicle applications, and ... » read more

Sustainable Rail Transportation With High Power SiC Modules: Part 2


In the first part of this blog, we had a look at how energy-efficient high-power modules contribute to the decarbonization of railway transportation. This part will focus on the future of traction: high-power silicon carbide modules, their key features, and the multiple system benefits they enable. Silicon carbide power modules and hybrid-propulsion trains: It’s a match! As we inch toward... » read more

← Older posts