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Mark Zurbuchen

Oak Ridge National Laboratory, Science Stuff, Department Member

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Address: Cty, California, United States

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Ts. Dr. Mustaffa Ali Azhar Taib

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Medical University of Warsaw

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Papers by Mark Zurbuchen

Transmission electron microscopy study of (103)-oriented epitaxial SrBi2Nb2O9 films grown on (111) SrTiO3 and (111) SrRuO3/(111) SrTiO3

Journal of Materials Research, 2001

Portions of the same epitaxial (103)-oriented SrBi2Nb2O9 film grown on (111) SrTiO3 for which we ... more Portions of the same epitaxial (103)-oriented SrBi2Nb2O9 film grown on (111) SrTiO3 for which we recently reported the highest remanent polarization (Pr) ever achieved in SrBi2Nb2O9 (or SrBi2Ta2O9) films, i.e., Pr = 15.7 μC/cm2, have been characterized microstructurally by plan-view and cross-sectional transmission electron microscopy (TEM) along three orthogonal viewing directions. SrBi2Nb2O9 grows with its c axis tilted 57° from the substrate surface normal in a three-fold twin structure about the substrate [111], with the growth twins' c axes nominally aligned with the three 〈100〉 SrTiO3 directions. (103) SrBi2Nb2O9 films with and without an underlying epitaxial SrRuO3 bottom electrode have been studied. Dark-field TEM imaging over a 12 μm2 area shows no evidence of second phases (crystalline or amorphous). A high density of out-of-phase boundaries exists in the films.

Synthesis of the superlattice complex oxide Sr5Bi4Ti8O27 and its band gap behavior

Applied Physics Letters, 2012

The n = 8 member of the Aurivillius complex oxide superlattice series of phases, Sr5Bi4Ti8O27, wa... more The n = 8 member of the Aurivillius complex oxide superlattice series of phases, Sr5Bi4Ti8O27, was synthesized by pulsed-laser deposition on (001) SrTiO3 single-crystal substrates. This phase, with a c-axis lattice parameter of 7.25 ± 0.036 nm, and its purity were confirmed by x-ray diffraction and transmission electron microscopy. The film is observed to be single phase and free of intergrowths of other-n members of the series. Using spectroscopic ellipsometry, Sr5Bi4Ti8O27 was determined to exhibit an indirect band gap of 3.53 eV at room temperature.

Topotactic anion exchange in epitaxial films: Synthesis advantages and characterization challenges

Research and reviews: journal of material sciences, Jan 29, 2019

Topotactic anion exchange in epitaxial films: Synthesis advantages and characterization challenge... more Topotactic anion exchange in epitaxial films: Synthesis advantages and characterization challenges Statement of the Problem: Despite direct epitaxial deposition/facet-growth of innumerable materials in lab experiments, new lattice-matched buffer (interdiffusion-blocking) layers are desperately needed by the microelectronics industries. There is a need for "substrate agnostic" buffer layer(s) to template epitaxial growth on Si, GaN, Ni and others. Epitaxial templates, particularly ultra-thin oxide layers, have been demonstrated to be excellent epitaxial buffer layers, but the fabrication of epitaxial samples of many materials is frustrated by chemical or lattice mismatch. This talk focuses on a new, better approach to dealing with heterogeneous interfaces. A promising new approach-topotactic anion exchange (TAE) epitaxy. The approach is unique, with two steps-1 st epitaxial deposition of a precursor layer; and 2 nd a special gas anneal to exchange the anions in the solid for others; to ultimately yield a highly perfect epitaxial film of the product phase. Opportunities abound, as there are only two criteria to meet: (a) The initial film is formulated to match the surface-symmetry type and lattice parameter of the substrate; (b) A thermal, atmosphere-controlled step initiates the topotactic reaction. Ideally, compositions for TAE layers are chosen with end members commensurate-as the reaction front passes through the solid. Cations are sessile with anions are relatively mobile. Anions are exchanged diffusively; but because the resultant material is a different phase altogether, conversion can dramatically alter the magneto-opto-electrical behaviors of the layers. Characterization requires finesse at the atomic level. The typical anions all have roughly the same atomic mass, making a discernment between the two phases complicated. The results of ex situ and in situ anion exchange experiments towards an epi buffer for Si and GaN will be presented. Further discussion of analyses thus far will be presented. Biography Mark A Zurbuchen is an Adjunct Professor in EE and MS&E in the prestigious DRL (Device Research Lab) under the WIN and CEGN Programs and additionally leads the "2D Materials" subgroup and is affiliated with the "Quantum Physics & Devices" subgroup as well. He is a thin film scientist. Electron and X-ray beam methods (XRD, TEM, synchrotron). Expertise in epitaxial films and heteroepitaxial integration. Materials design, thin film deposition, microstructural characterization, crystallography and electrical behavior. 2D materials, oxide electronics, ferroelectrics, dielectrics, multiferroics, superconductors, nano-scale thermal behavior and biomaterials.

Film topotactique d'oxyde echangeur d'anions et leur procede de fabrication

L'invention concerne des procedes servant a fabriquer des films d'oxyde metallique sur de... more L'invention concerne des procedes servant a fabriquer des films d'oxyde metallique sur des surfaces par echange d'anions topotactique, ainsi que des structures stratifiees obtenues au moyen de ces procedes. Ceci consiste a deposer un film precurseur metallique-non metallique sur la surface et a oxyder ensuite ce film par l'intermediaire d'un echange d'anions topotactique, de maniere a produire un film metal-oxyde topotactique. Les structures sont composees d'une ou de plusieurs couches metal-oxyde et/ou d'une ou de plusieurs couches metalliques-non metalliques.

Crossover in thermal transport properties of natural, perovskite-structured superlattices

Applied Physics Letters, 2009

Atomic-level simulations are used to analyze the thermal-transport properties of a naturally laye... more Atomic-level simulations are used to analyze the thermal-transport properties of a naturally layered material: the Ruddlesden-Popper phase, formed by interleaving perovskite layers of strontium titanate with strontium oxide rocksalt layers. The thermal conductivity parallel to the plane of structural layering is found to be systematically greater than that perpendicular to the layering. With decreasing number of perovskite blocks in the structure, a transition is seen from the thermal-transport properties of a bulk solid containing interfaces to that of an anisotropic monolithic material. The exact transition point should be temperature dependent and might enable tuning of the thermal conductance properties of the material.

Determination of the thermal conductivity tensor of the n = 7 Aurivillius phase Sr4Bi4Ti7O24

Applied Physics Letters, 2012

A challenge in the preparation of advanced materials that exist only as thin films is to establis... more A challenge in the preparation of advanced materials that exist only as thin films is to establish their properties, particularly when the materials are of low symmetry or the tensor properties of interest are of high rank. Using Sr 4 Bi 4 Ti 7 O 24 as an example, we show how the preparation of oriented epitaxial films of multiple orientations enables the thermal conductivity tensor of this tetragonal material with a c-axis length of 64.7 Å to be measured. The thermal conductivity tensor coefficients k 33 ¼ 1.10 W m À1 K À1 and k 11 ¼ k 22 ¼ 1.80 W m À1 K À1 were determined by growing epitaxial Sr 4 Bi 4 Ti 7 O 24 films on (100), (110), and (111) SrTiO 3 substrates. V

A Thin Film Approach to Engineering Functionality into Oxides

Journal of the American Ceramic Society, 2008

Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical Enhanced Atomic Layer Deposition

ACS Applied Materials & Interfaces

New Class of High Temperature Pseudo-Amorphous Oxide Materials

Enhanced voltage-controlled magnetic anisotropy in magnetic tunnel junctions with an MgO/PZT/MgO tunnel barrier

Applied Physics Letters, 2016

Compared with current-controlled magnetization switching in a perpendicular magnetic tunnel junct... more Compared with current-controlled magnetization switching in a perpendicular magnetic tunnel junction (MTJ), electric field-or voltage-induced magnetization switching reduces the writing energy of the memory cell, which also results in increased memory density. In this work, an ultrathin PZT film with high dielectric constant was integrated into the tunneling oxide layer to enhance the voltage-controlled magnetic anisotropy (VCMA) effect. The growth of MTJ stacks with an MgO/PZT/MgO tunnel barrier was performed using a combination of sputtering and atomic layer deposition techniques. The fabricated MTJs with the MgO/PZT/MgO barrier demonstrate a VCMA coefficient, which is $40% higher (19.8 6 1.3 fJ/V m) than the control sample MTJs with an MgO barrier (14.3 6 2.7 fJ/V m). The MTJs with the MgO/PZT/MgO barrier also possess a sizeable tunneling magnetoresistance (TMR) of more than 50% at room temperature, comparable to the control MTJs with an MgO barrier. The TMR and enhanced VCMA effect demonstrated simultaneously in this work make the MgO/PZT/MgO barrier-based MTJs potential candidates for future voltagecontrolled, ultralow-power, and high-density magnetic random access memory devices.

Automated Sectioning Tomographic Measurement System

Microstructure and electrical properties of epitaxial SrBi{sub 2}Nb{sub 2}O{sub 9} and SrBi{sub 2}Ta{sub 2}O{sub 9} films

SrBi 2 Nb 2 O 9 (and in some cases SrBi 2 Ta 2 O 9) epitaxial thin films were deposited on (001),... more SrBi 2 Nb 2 O 9 (and in some cases SrBi 2 Ta 2 O 9) epitaxial thin films were deposited on (001), (110), and (111) SrTiO 3 substrates by pulsed laser deposition (PLD), both with and without epitaxial SrRuO 3 bottom electrodes. Films grow epitaxially with the c-axis inclined by 0°, 45°, and 57° from the substrate surface normal, respectively. Greater tilts of the c-axis into the plane of the substrate surface provide a greater component of the polar axis (the a-axis of the orthorhombic unit cell) perpendicular to the substrate surface, leading to increased remanent polarization (P r) values. Portions of the same films used for electrical characterization were examined by transmission electron microscopy (TEM). Films have a single c-axis tilt angle and are fully crystalline with no observable second-phase inclusions. All films are observed to have a high density of out-of-phase boundaries (OPBs).

Epitaxial layer structures, precursors for topotactic anion exchange films

Photographic silver emulsion-based digital archival storage

Epitaxial growth of SrBi 2 Nb 2 O 9 on Ñ110Ö SrTiO 3 and the establishment of a lower bound on the spontaneous polarization of SrBi 2 Nb 2 O 9

Epitaxial Layer Structures and Precursors for Topotactic Anion Exchange Oxide Films

Ferroelectric domain structure of SrBiNbO epitaxial thin films

Phys Rev Lett, 2002

The domain structure in a ferroelectric with well-defined crystallography and negligible ferroela... more The domain structure in a ferroelectric with well-defined crystallography and negligible ferroelastic distortion (&lt;0.002%) is reported. In contrast to prototypical ferroelectrics in which long-range elastic strain dictates the domain structure, in SrBiNbO the elastic term is insignificant, allowing dipole-dipole interactions and domain wall energies to dominate in determining the domain structure. Electron microscopy reveals ferroelectric domains that are irregularly shaped and highly curved. Out-of-phase boundary defects are shown to be weakly correlated with 90 degree ferroelectric domain structure.

Microstructure and electrical properties of epitaxial SrBi2Nb2O9 And SrBi2Ta2O9 films

Http Dx Doi Org 10 1080 10584580108222285, Aug 19, 2006

SrBi 2 Nb 2 O 9 (and in some cases SrBi 2 Ta 2 O 9) epitaxial thin films were deposited on (001),... more SrBi 2 Nb 2 O 9 (and in some cases SrBi 2 Ta 2 O 9) epitaxial thin films were deposited on (001), (110), and (111) SrTiO 3 substrates by pulsed laser deposition (PLD), both with and without epitaxial SrRuO 3 bottom electrodes. Films grow epitaxially with the c-axis inclined by 0°, 45°, and 57° from the substrate surface normal, respectively. Greater tilts of the c-axis into the plane of the substrate surface provide a greater component of the polar axis (the a-axis of the orthorhombic unit cell) perpendicular to the substrate surface, leading to increased remanent polarization (P r) values. Portions of the same films used for electrical characterization were examined by transmission electron microscopy (TEM). Films have a single c-axis tilt angle and are fully crystalline with no observable second-phase inclusions. All films are observed to have a high density of out-of-phase boundaries (OPBs).

Transmission electron microscopy investigation of defects and domains in epitaxial films of Aurivillius and Ruddlesden-Popper phases

Proquest Dissertations and Theses Thesis the Pennsylvania State University 2002 Publication Number Aai3077601 Isbn 9780493981352 Source Dissertation Abstracts International Volume 64 01 Section B Page 0377 119 P, 2002

Topotactic Anion Exchange Oxide Films and Method of Producing the Same

Transmission electron microscopy study of (103)-oriented epitaxial SrBi2Nb2O9 films grown on (111) SrTiO3 and (111) SrRuO3/(111) SrTiO3

Journal of Materials Research, 2001

Portions of the same epitaxial (103)-oriented SrBi2Nb2O9 film grown on (111) SrTiO3 for which we ... more Portions of the same epitaxial (103)-oriented SrBi2Nb2O9 film grown on (111) SrTiO3 for which we recently reported the highest remanent polarization (Pr) ever achieved in SrBi2Nb2O9 (or SrBi2Ta2O9) films, i.e., Pr = 15.7 μC/cm2, have been characterized microstructurally by plan-view and cross-sectional transmission electron microscopy (TEM) along three orthogonal viewing directions. SrBi2Nb2O9 grows with its c axis tilted 57° from the substrate surface normal in a three-fold twin structure about the substrate [111], with the growth twins' c axes nominally aligned with the three 〈100〉 SrTiO3 directions. (103) SrBi2Nb2O9 films with and without an underlying epitaxial SrRuO3 bottom electrode have been studied. Dark-field TEM imaging over a 12 μm2 area shows no evidence of second phases (crystalline or amorphous). A high density of out-of-phase boundaries exists in the films.

Synthesis of the superlattice complex oxide Sr5Bi4Ti8O27 and its band gap behavior

Applied Physics Letters, 2012

The n = 8 member of the Aurivillius complex oxide superlattice series of phases, Sr5Bi4Ti8O27, wa... more The n = 8 member of the Aurivillius complex oxide superlattice series of phases, Sr5Bi4Ti8O27, was synthesized by pulsed-laser deposition on (001) SrTiO3 single-crystal substrates. This phase, with a c-axis lattice parameter of 7.25 ± 0.036 nm, and its purity were confirmed by x-ray diffraction and transmission electron microscopy. The film is observed to be single phase and free of intergrowths of other-n members of the series. Using spectroscopic ellipsometry, Sr5Bi4Ti8O27 was determined to exhibit an indirect band gap of 3.53 eV at room temperature.

Topotactic anion exchange in epitaxial films: Synthesis advantages and characterization challenges

Research and reviews: journal of material sciences, Jan 29, 2019

Topotactic anion exchange in epitaxial films: Synthesis advantages and characterization challenge... more Topotactic anion exchange in epitaxial films: Synthesis advantages and characterization challenges Statement of the Problem: Despite direct epitaxial deposition/facet-growth of innumerable materials in lab experiments, new lattice-matched buffer (interdiffusion-blocking) layers are desperately needed by the microelectronics industries. There is a need for "substrate agnostic" buffer layer(s) to template epitaxial growth on Si, GaN, Ni and others. Epitaxial templates, particularly ultra-thin oxide layers, have been demonstrated to be excellent epitaxial buffer layers, but the fabrication of epitaxial samples of many materials is frustrated by chemical or lattice mismatch. This talk focuses on a new, better approach to dealing with heterogeneous interfaces. A promising new approach-topotactic anion exchange (TAE) epitaxy. The approach is unique, with two steps-1 st epitaxial deposition of a precursor layer; and 2 nd a special gas anneal to exchange the anions in the solid for others; to ultimately yield a highly perfect epitaxial film of the product phase. Opportunities abound, as there are only two criteria to meet: (a) The initial film is formulated to match the surface-symmetry type and lattice parameter of the substrate; (b) A thermal, atmosphere-controlled step initiates the topotactic reaction. Ideally, compositions for TAE layers are chosen with end members commensurate-as the reaction front passes through the solid. Cations are sessile with anions are relatively mobile. Anions are exchanged diffusively; but because the resultant material is a different phase altogether, conversion can dramatically alter the magneto-opto-electrical behaviors of the layers. Characterization requires finesse at the atomic level. The typical anions all have roughly the same atomic mass, making a discernment between the two phases complicated. The results of ex situ and in situ anion exchange experiments towards an epi buffer for Si and GaN will be presented. Further discussion of analyses thus far will be presented. Biography Mark A Zurbuchen is an Adjunct Professor in EE and MS&E in the prestigious DRL (Device Research Lab) under the WIN and CEGN Programs and additionally leads the "2D Materials" subgroup and is affiliated with the "Quantum Physics & Devices" subgroup as well. He is a thin film scientist. Electron and X-ray beam methods (XRD, TEM, synchrotron). Expertise in epitaxial films and heteroepitaxial integration. Materials design, thin film deposition, microstructural characterization, crystallography and electrical behavior. 2D materials, oxide electronics, ferroelectrics, dielectrics, multiferroics, superconductors, nano-scale thermal behavior and biomaterials.

Film topotactique d'oxyde echangeur d'anions et leur procede de fabrication

L'invention concerne des procedes servant a fabriquer des films d'oxyde metallique sur de... more L'invention concerne des procedes servant a fabriquer des films d'oxyde metallique sur des surfaces par echange d'anions topotactique, ainsi que des structures stratifiees obtenues au moyen de ces procedes. Ceci consiste a deposer un film precurseur metallique-non metallique sur la surface et a oxyder ensuite ce film par l'intermediaire d'un echange d'anions topotactique, de maniere a produire un film metal-oxyde topotactique. Les structures sont composees d'une ou de plusieurs couches metal-oxyde et/ou d'une ou de plusieurs couches metalliques-non metalliques.

Crossover in thermal transport properties of natural, perovskite-structured superlattices

Applied Physics Letters, 2009

Atomic-level simulations are used to analyze the thermal-transport properties of a naturally laye... more Atomic-level simulations are used to analyze the thermal-transport properties of a naturally layered material: the Ruddlesden-Popper phase, formed by interleaving perovskite layers of strontium titanate with strontium oxide rocksalt layers. The thermal conductivity parallel to the plane of structural layering is found to be systematically greater than that perpendicular to the layering. With decreasing number of perovskite blocks in the structure, a transition is seen from the thermal-transport properties of a bulk solid containing interfaces to that of an anisotropic monolithic material. The exact transition point should be temperature dependent and might enable tuning of the thermal conductance properties of the material.

Determination of the thermal conductivity tensor of the n = 7 Aurivillius phase Sr4Bi4Ti7O24

Applied Physics Letters, 2012

A challenge in the preparation of advanced materials that exist only as thin films is to establis... more A challenge in the preparation of advanced materials that exist only as thin films is to establish their properties, particularly when the materials are of low symmetry or the tensor properties of interest are of high rank. Using Sr 4 Bi 4 Ti 7 O 24 as an example, we show how the preparation of oriented epitaxial films of multiple orientations enables the thermal conductivity tensor of this tetragonal material with a c-axis length of 64.7 Å to be measured. The thermal conductivity tensor coefficients k 33 ¼ 1.10 W m À1 K À1 and k 11 ¼ k 22 ¼ 1.80 W m À1 K À1 were determined by growing epitaxial Sr 4 Bi 4 Ti 7 O 24 films on (100), (110), and (111) SrTiO 3 substrates. V

A Thin Film Approach to Engineering Functionality into Oxides

Journal of the American Ceramic Society, 2008

Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical Enhanced Atomic Layer Deposition

ACS Applied Materials & Interfaces

New Class of High Temperature Pseudo-Amorphous Oxide Materials

Enhanced voltage-controlled magnetic anisotropy in magnetic tunnel junctions with an MgO/PZT/MgO tunnel barrier

Applied Physics Letters, 2016

Compared with current-controlled magnetization switching in a perpendicular magnetic tunnel junct... more Compared with current-controlled magnetization switching in a perpendicular magnetic tunnel junction (MTJ), electric field-or voltage-induced magnetization switching reduces the writing energy of the memory cell, which also results in increased memory density. In this work, an ultrathin PZT film with high dielectric constant was integrated into the tunneling oxide layer to enhance the voltage-controlled magnetic anisotropy (VCMA) effect. The growth of MTJ stacks with an MgO/PZT/MgO tunnel barrier was performed using a combination of sputtering and atomic layer deposition techniques. The fabricated MTJs with the MgO/PZT/MgO barrier demonstrate a VCMA coefficient, which is $40% higher (19.8 6 1.3 fJ/V m) than the control sample MTJs with an MgO barrier (14.3 6 2.7 fJ/V m). The MTJs with the MgO/PZT/MgO barrier also possess a sizeable tunneling magnetoresistance (TMR) of more than 50% at room temperature, comparable to the control MTJs with an MgO barrier. The TMR and enhanced VCMA effect demonstrated simultaneously in this work make the MgO/PZT/MgO barrier-based MTJs potential candidates for future voltagecontrolled, ultralow-power, and high-density magnetic random access memory devices.

Automated Sectioning Tomographic Measurement System

Microstructure and electrical properties of epitaxial SrBi{sub 2}Nb{sub 2}O{sub 9} and SrBi{sub 2}Ta{sub 2}O{sub 9} films

SrBi 2 Nb 2 O 9 (and in some cases SrBi 2 Ta 2 O 9) epitaxial thin films were deposited on (001),... more SrBi 2 Nb 2 O 9 (and in some cases SrBi 2 Ta 2 O 9) epitaxial thin films were deposited on (001), (110), and (111) SrTiO 3 substrates by pulsed laser deposition (PLD), both with and without epitaxial SrRuO 3 bottom electrodes. Films grow epitaxially with the c-axis inclined by 0°, 45°, and 57° from the substrate surface normal, respectively. Greater tilts of the c-axis into the plane of the substrate surface provide a greater component of the polar axis (the a-axis of the orthorhombic unit cell) perpendicular to the substrate surface, leading to increased remanent polarization (P r) values. Portions of the same films used for electrical characterization were examined by transmission electron microscopy (TEM). Films have a single c-axis tilt angle and are fully crystalline with no observable second-phase inclusions. All films are observed to have a high density of out-of-phase boundaries (OPBs).

Epitaxial layer structures, precursors for topotactic anion exchange films

Photographic silver emulsion-based digital archival storage

Epitaxial growth of SrBi 2 Nb 2 O 9 on Ñ110Ö SrTiO 3 and the establishment of a lower bound on the spontaneous polarization of SrBi 2 Nb 2 O 9

Epitaxial Layer Structures and Precursors for Topotactic Anion Exchange Oxide Films

Ferroelectric domain structure of SrBiNbO epitaxial thin films

Phys Rev Lett, 2002

The domain structure in a ferroelectric with well-defined crystallography and negligible ferroela... more The domain structure in a ferroelectric with well-defined crystallography and negligible ferroelastic distortion (&lt;0.002%) is reported. In contrast to prototypical ferroelectrics in which long-range elastic strain dictates the domain structure, in SrBiNbO the elastic term is insignificant, allowing dipole-dipole interactions and domain wall energies to dominate in determining the domain structure. Electron microscopy reveals ferroelectric domains that are irregularly shaped and highly curved. Out-of-phase boundary defects are shown to be weakly correlated with 90 degree ferroelectric domain structure.

Microstructure and electrical properties of epitaxial SrBi2Nb2O9 And SrBi2Ta2O9 films

Http Dx Doi Org 10 1080 10584580108222285, Aug 19, 2006

SrBi 2 Nb 2 O 9 (and in some cases SrBi 2 Ta 2 O 9) epitaxial thin films were deposited on (001),... more SrBi 2 Nb 2 O 9 (and in some cases SrBi 2 Ta 2 O 9) epitaxial thin films were deposited on (001), (110), and (111) SrTiO 3 substrates by pulsed laser deposition (PLD), both with and without epitaxial SrRuO 3 bottom electrodes. Films grow epitaxially with the c-axis inclined by 0°, 45°, and 57° from the substrate surface normal, respectively. Greater tilts of the c-axis into the plane of the substrate surface provide a greater component of the polar axis (the a-axis of the orthorhombic unit cell) perpendicular to the substrate surface, leading to increased remanent polarization (P r) values. Portions of the same films used for electrical characterization were examined by transmission electron microscopy (TEM). Films have a single c-axis tilt angle and are fully crystalline with no observable second-phase inclusions. All films are observed to have a high density of out-of-phase boundaries (OPBs).

Transmission electron microscopy investigation of defects and domains in epitaxial films of Aurivillius and Ruddlesden-Popper phases

Proquest Dissertations and Theses Thesis the Pennsylvania State University 2002 Publication Number Aai3077601 Isbn 9780493981352 Source Dissertation Abstracts International Volume 64 01 Section B Page 0377 119 P, 2002

Topotactic Anion Exchange Oxide Films and Method of Producing the Same