Dr. Mahesh Kumar

National Physical Laboratory, Surface Physics and Nano Structures Group, Faculty Member

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Joined NPL India, in DEC 2006 as a Scientist after completion of the Ph.D. from Delhi University. Currently working in the field of Photonics and Surface Science at National Physical Laboratory New Delhi INDIA.Research interest includes Ultrafast Laser Spectroscopy, Terahertz Spectroscopy, Surface Science, Semiconductors, (III-V, Si), Thin Films, and UHV Instrumentation.
Phone: 91-11-45721079
Address: TEC-7 Surface Physics and Ultrafast Dynamics Group,
NationalPhysical Laboratory, Dr.K.S. Krishnan Road,
New Delhi 110012 INDIA

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Papers by Dr. Mahesh Kumar

“A superstructural 2D-phase diagram for Ga on the Si(111)- 7x7 system”

The structural modifications of an Si(111)- 7x7 reconstructed surface and the evolution of growth... more The structural modifications of an Si(111)- 7x7 reconstructed surface and the evolution of growth induced by Ga adsorption in the submonolayer regime at various substrate temperatures ranging from room temperature (RT) to 600 °C, with a low Ga flux rate of 0.1 ML/min (1 ML∼6.8×1014 atoms/cm2) have been studied in-situ in Ultra High Vacuum (UHV) using Auger Electron Spectroscopy (AES), Low Energy Electron Diffraction (LEED) and Electron Energy Loss Spectroscopy (EELS) as characterization probes. Ga grows in the Stranski–Krastanov (SK) growth mode for temperatures ranging from RT to 350 °C, where 3D-islands form after one and two flat monolayers of Ga adsorption, while for higher temperatures ranging from 450 to 550 °C, Ga grows in the Volmer–Weber (VW) growth mode. A comprehensive 2D-phase diagram for this Ga/Si(111) system for adsorption, which provides pathways to attain the observed superstructural phases, viz., √3x√3-R30°, 6.3x6.3, 6.3√3x6.3√3-R30° and 11x11, has been investigated. The characteristic EELS spectrum for each superstructural phase is also reported in this study.► Arrived at a 2D-superstructural phase-diagram of this system for the first time. ► 2D-islands to 3D growth mode dependence on growth kinetics. ► Formation of √3x√3-R30° phase at room temperature.

“A superstructural 2D-phase diagram for Ga on the Si(111)- 7x7 system”

Dr. Mahesh Kumar

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Papers by Dr. Mahesh Kumar

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