Papers by Yin-Cheng Chang
2022 IEEE/MTT-S International Microwave Symposium - IMS 2022, Jun 19, 2022
2016 46th European Microwave Conference (EuMC), 2016
A high gain 60-GHz on-chip dual-polarization dielectric resonator antenna (DRA) in silicon substr... more A high gain 60-GHz on-chip dual-polarization dielectric resonator antenna (DRA) in silicon substrate based on Integrated Passive Device (IPD) technology is presented in the paper. In the proposed structure, dielectric resonator (DR) was fed by using wire-bond structures for bandwidth and antenna efficiency improvement. The Simulation and measurement regarding the antenna reflection coefficient and isolation are conducted for design validation. The measurement results show that the antenna can operate in 60-GHz band, and the impedance bandwidth with |S11| less than −10 dB is from 52.5 GHz to 63.5 GHz. The peak gain is 5.5 dBi. The proposed design is well suited for System-in-Package millimeter-wave radio front-ends.
2017 Asia-Pacific International Symposium on Electromagnetic Compatibility (APEMC), 2017
Two on-chip electromagnetic compatibility (EMC) solutions realized in the standard 0.18 µm CMOS t... more Two on-chip electromagnetic compatibility (EMC) solutions realized in the standard 0.18 µm CMOS technology are proposed. A slew rate controller for electromagnetic interference (EMI) reduction is demonstrated by increasing the rise and fall time of signal to lower the harmonic energy on FFT spectrum. Besides, a MOS plus MOM decoupling capacitor for both EMI and electromagnetic susceptibility (EMS) issues is proposed to provide a 17.6 % added capacitance than the conventional decoupling capacitors under the same area. The experiment results prove that the proposed EMC strategies are effective and can be utilized in the chip design with low design complexity.
2018 20th International Conference on Electronic Materials and Packaging (EMAP), 2018
This paper presents a dual-band dual-polarization stacked dielectric resonator antenna (DRA) elem... more This paper presents a dual-band dual-polarization stacked dielectric resonator antenna (DRA) element design. Two mutually perpendicular bonding wire structures are used for realizing wide bandwidth feeding network. The DRA is implemented in low-cost integrated passive device (IPD) envirnoment. This millimeter wave DRA exhibits wide bandwidth, wide beamwidth and high gain characteristics. It is suitable for dual polarized millimeter wave scanning antenna array system application.
2014 Asia Pacific Microwave Conference, Nov 1, 2014
The design and characterization of a 24-GHz 0.18µm CMOS voltage-controlled oscillator are present... more The design and characterization of a 24-GHz 0.18µm CMOS voltage-controlled oscillator are presented. By utilizing the asymmetric-width transformer and the forward-body bias (FBB) techniques, the proposed VCO can be operated at reduced supply voltage and power consumption while maintaining the circuit performance in terms of phase noise and signal output swing. With these techniques, the transistor size can be reduced to reach a higher oscillation frequency under low power budget. Consuming a dc current of 8mA with the supply voltage of only 0.6V, the K-band VCO exhibits a frequency tuning range of 840MHz, a phase noise of −104.6dBc/Hz (1MHz offset), and a figure of merit up to 185dBc/Hz.
2015 IEEE International Wireless Symposium (IWS 2015), 2015
Different configurations and design techniques to achieve high performance Ku/Ka band down-conver... more Different configurations and design techniques to achieve high performance Ku/Ka band down-converter front-end for digital broadcast satellite (DBS) receivers are presented. The individual blocks of low-noise amplifier (LNA), mixer, balun, and IF amplifier suitable for DBS applications are reviewed and discussed in details. Also, our recent progress in the fully-integrated low-noise blocks (LNBs) using low cost 0.18-μm SiGe BiCMOS technology for DBS down-converter is reported, including a Ku-band design with a low NF (<; 5.8 dB) and a high conversion gain up to 47.7 dB, and also a Ka-band design achieving a NF <; 6.6 dB with a conversion gain up to 49.4 dB. The output P1dB of the two designs are 5.8 dBm and 4.2 dBm, respectively.
2018 IEEE International Workshop on Electromagnetics:Applications and Student Innovation Competition (iWEM), 2018
A fully integrated low dropout regulator (LDO) with decoupling capacitors (decaps) for high elect... more A fully integrated low dropout regulator (LDO) with decoupling capacitors (decaps) for high electromagnetic immunity is designed in the standard $\mathbf{0.18} \mu \mathbf{m}$ CMOS technology. The decaps composed of MOS and MoM capacitors are utilized to decouple the high frequency interference. The characteristic of electromagnetic susceptibility (EMS) of the LDO is performed by the direct RF power injection (DPI) measurement up to 18 GHz. The measured results demonstrate the immunity of LDO with decaps is superior to that of LDO without decaps (maximum improvement of 11.6 dB). Also, the wideband DPI measurement is shown to be capable of characterizing the EMS of ICs.
2020 IEEE International Symposium on Antennas and Propagation and North American Radio Science Meeting, 2020
A wide-bandwidth V-band quarter-mode substrate-integrated waveguide (QM-SIW) antenna using integr... more A wide-bandwidth V-band quarter-mode substrate-integrated waveguide (QM-SIW) antenna using integrated passive device (IPD) process and flip-chip technology is proposed in this paper. The proposed antenna mainly comprises of four QM-SIW formed by flip-chip cavity structure surrounded a series-type power divider network to achieve circularly polarized radiation. The cavity size is of ${3.2\ \times\ 3.2\ \times\ 0.1}\ {\text{mm}^{3}}$. The proposed antenna is well suited for compact high-integrated millimeter-wave beam forming wireless communication systems.
2018 IEEE CPMT Symposium Japan (ICSJ), 2018
A 60 GHz high-gain millimeter-wave (mmW) left-handed circularly polarized dielectric resonator an... more A 60 GHz high-gain millimeter-wave (mmW) left-handed circularly polarized dielectric resonator antenna (DRA) array in silicon substrate integrated passive device (IPD) technology for unlicensed V-band (57-64 GHz) application is presented. In the proposed array structure, a 1-to-4 series-type ring-shape microstrip power divider is connected with four bondwire structures feeding four dielectric resonators (DRs). The results show that the antenna can operate in V-band, and the impedance bandwidths with $\vert \vert$ less than -10 dB are from 51.6 to 64.1 GHz. The gain are 9 dBi at 60 GHz. The axial ratio is less than 3 dB from 57.2 GHz to 63 GHz. The proposed antenna is well suited for millimeter-wave high-gain beam forming wireless communication systems.
IEICE Proceeding Series
A current probe based on IEC standard 61967-4 is proposed to investigate the conducted electromag... more A current probe based on IEC standard 61967-4 is proposed to investigate the conducted electromagnetic emission of IC above 1 GHz. The 1 Ω method in direct coupling method is revisited, and the concern for extending frequency range is discussed. The critical resistive network of 1 Ω probe is realized by a semiconductor process instead of the SMD resistors. With the advantage of reduced parasitic effect, the applicable bandwidth can be extended to 2.4 GHz. The proposed 1 Ω probe is verified to fulfill the EMI measurement of IC with operating frequency higher than 1 GHz.
2017 IEEE MTT-S International Microwave Symposium (IMS), 2017
A high performance X-band quadrature phase voltage controlled oscillator for direct-conversion tr... more A high performance X-band quadrature phase voltage controlled oscillator for direct-conversion transceivers in 0.18-μm CMOS is demonstrated. By using the novel 8-shaped transformer topology, the proposed quadrature phase VCO can be operated at reduced dc power consumption while maintaining low phase noise with suppressed EMC (Electro-Magnetic Compatibility) issues Consuming a dc bias current of 5.45 mA with the supply voltage of 1.8V, the QVCO has a frequency tuning range of 570 MHz, a phase noise of −121.12 dBc/Hz at 1MHz offset frequency away from the 10.5 GHz carrier frequency, and an FoM up to 191.9 dBc/Hz.
A DC bias board with 9 separate output voltages is proposed for high precision and noise sensitiv... more A DC bias board with 9 separate output voltages is proposed for high precision and noise sensitive measurements. The measured results demonstrated an improved baseband noise up to 30 dB at 20 kHz compared with the laboratory power supplier. A voltage-controlled oscillator (VCO) in CMOS is used to benchmark the impact of power supply noise on circuit performance. The proposed bias board achieves a great agreement with the signal source analyzer (SSA) built-in DC source for phase noise measurement at the frequency offset from 3 kHz to 10 MHz, while results based on the typical power suppliers directly show significant spurs and noises as expected. The proposed technique provides an effective and practical solution for the characterization of noise sensitive integrated circuits with the need of multiple biases.
2015 European Microwave Conference (EuMC), 2015
This paper presents the design and analysis of a high performance receiver front-end for various ... more This paper presents the design and analysis of a high performance receiver front-end for various X-band applications. The proposed circuits employ transformer feedback and resonant-coupled networks (RCNs) for the low-noise amplifier (LNA). The mixer design uses a double-balanced topology to achieve low power and also low noise characteristics. The IF post-amplifier adopts the Cherry-Hooper based variable gain amplifier (VGA) with 3D inductors for wideband and high linearity considerations. Implemented in a 90-nm CMOS process, the whole receiver front-end dissipates only 22.8 mA from a 1.2-V supply voltage. The measured NF is below 3.8 dB with a maximum conversion gain of 65.1 dB within the X-band of 8-12 GHz. The average output P1dB over this frequency range is measured as 1.12 dBm at the maximum gain.
2014 44th European Microwave Conference, 2014
An effective coupling topology for multi-phase oscillators is proposed and demonstrated in a stan... more An effective coupling topology for multi-phase oscillators is proposed and demonstrated in a standard 90nm CMOS technology. Compared with the conventional parallel or series coupling methods, the PMOS-source-follower coupled (PSFC) technique with the coupling transistors operated in the cutoff region can significantly reduce the flicker noise and hence the phase noise of VCO. The proposed PSFC QVCOs at 24.39GHz demonstrates a low phase noise of-106.05dBc/Hz at 1MHz offset with a tuning range of 3.22GHz under the supply voltage and current consumption of 1V and 6.2mA, respectively. The proposed PSFC-QVCO exhibits a better FOM T of 188.2dBc/Hz and smaller chip area (core area only 0.18 mm 2) than previous works.
IEEE Microwave and Wireless Components Letters, 2003
This letter presents a novel design for a small-size coplanar waveguide frequency tripler. In thi... more This letter presents a novel design for a small-size coplanar waveguide frequency tripler. In this study, a new BPF has been replaced the conventional stub lines in the output termination of the multiplier. Not only enhance the performance of the tripler, but also reduce the whole circuit size. to 2.125×2.275 cm2 in the frequency 0.8/2.4 GHz, The spurious suppressions are
A reliable DPI measurement is proposed to investigate the IC immunity above 1GHz. The direct RF p... more A reliable DPI measurement is proposed to investigate the IC immunity above 1GHz. The direct RF power injection (DPI) method is reviewed, and the concern for extending frequency range is discussed. Details of the measurement setup are reported in this work. The critical part, on-board injection network, in the power injection path is realized with a 3dB bandwidth of 14.5GHz. A low dropout regulator is used to demonstrate the test and setup. The proposed DPI measurement above 1GHz is validated by the experimental results.
2021 IEEE MTT-S International Microwave Symposium (IMS), 2021
A low electromagnetic susceptibility voltage-controlled oscillator (VCO) utilizing a four-leaf-cl... more A low electromagnetic susceptibility voltage-controlled oscillator (VCO) utilizing a four-leaf-clover-shaped inductor is demonstrated at 5 GHz by 0.18-µm CMOS. A novel chip-level near-field coupling measurement setup resembling the modern 3D stacked packaging scheme is proposed using the integrated passive device (IPD) technology. The IPD coil embedded in the test carrier can generate EM interference on the flip-chip bonded VCO to verify the proposed high EMI immunity VCO. Compared to a VCO with the conventional spiral inductor, a significant improvement over 30 dB in a wide frequency range (maximum of 32.2 dB) in susceptibility is demonstrated by the VCO with the four-leaf-clover-shaped inductor.
2017 IEEE CPMT Symposium Japan (ICSJ)
A dual-band millimeter-wave (mmW) dielectric resonator antenna (DRA) in silicon based integrated ... more A dual-band millimeter-wave (mmW) dielectric resonator antenna (DRA) in silicon based integrated passive device (IPD) technology for unlicensed V-band (57–64 GHz) and E-band (71–86 GHz) applications is proposed in this paper. In the proposed structure, dielectric resonator (DR) was fed by using vertical coupling feed architecture to improve the antenna efficiency and gains. The simulated results show that the antenna can operate in V-band and E-band, and the impedance bandwidths with |S11| less than −10 dB are from 57.6 to 62.1 GHz and from 77.1 to 81.2 GHz, respectively. The simulated gains are 5.1 dBi at 60 GHz and 5.9 dBi at 80 GHz, respectively. The proposed antenna is well suited for dual-band millimeter-wave high-gain wireless communication systems.
2020 IEEE USNC-CNC-URSI North American Radio Science Meeting (Joint with AP-S Symposium)
The IC stripline, an IEC radiated electromagnetic susceptibility (EMS) method, is utilized for ev... more The IC stripline, an IEC radiated electromagnetic susceptibility (EMS) method, is utilized for evaluating the injection pulling and locking effects of the voltage-controlled oscillator (VCO). An IC stripline with the bandwidth of 2.5 GHz is realized and the test setup is built. A commercial VCO is tested for demonstration. Another IEC conducted EMS test, direct power injection, is also performed for comparison. The results show the effectiveness of characterizing injection pulling and locking of VCO by using the proposed solution.
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Papers by Yin-Cheng Chang