Ting-wei Tang

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Haitao Gan

Muhammad EL-SABA

Ain Shams University

Siegfried Selberherr

Technische Universität Wien

Katerina Raleva

Mowfaq Ahmed

M. Lundstrom

Purdue University

Supriyo Bandyopadhyay

Virginia Commonwealth University

J. Cervenka

Davide Ventura

Thomas Windbacher

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Papers by Ting-wei Tang

Two formulations of semiconductor transport equations based on spherical harmonic expansion of the Boltzmann transport equation

IEEE Transactions on Electron Devices, 2000

Two different formulations of semiconductor transport models based on the spherical harmonic expa... more Two different formulations of semiconductor transport models based on the spherical harmonic expansion of the Boltzmann transport equation are presented. In the one-dimensional (1-D) case, macroscopic transport coefficients are defined through Legendre components of the distribution function. Although either formulation is permissible, the modeling of transport coefficients in one of the formulations is more tractable than the other. The validity of the Einstein and other relations are also examined. The two different transport formulations are then applied to the hydrodynamic simulation of an n +-n-n + structure and results are compared with the Monte Carlo simulation data.

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A non-local hydrodynamic model for impact ionization in submicron silicon BJT's

by P. Scrobohaci and Ting-wei Tang

Membrane Technology, 1993

A 1-D transport model for the high-energy electrons contributing to impact ionization (II) is pre... more A 1-D transport model for the high-energy electrons contributing to impact ionization (II) is presented. Application of the hydrodynamic II model to submicron silicon BJTs allows one to accurately predict the impact ionization coefficient αii and the multiplication factor M - 1. Comparison of the calculated results with the Monte Carlo simulation data is also presented

A general purpose hydrodynamic solver for the simulation of semiconductor devices

International Electron Devices and Materials Symposium, 1994

ABSTRACT

Impact ionization coefficient and energy distribution function at high fields in semiconductors

Journal of Applied Physics, 1989

ABSTRACT

Computer simulation of hot-carrier effects in asymmetric LDD and LDS MOSFET devices

IEEE Transactions on Electron Devices, 1989

ABSTRACT

Numerical simulation of avalanche hot-carrier injection in short-channel MOSFET's

IEEE Transactions on Electron Devices, 1988

Absfract-Based on two-dimensional MOSFET simulation, the substrate and gate currents resulting fr... more Absfract-Based on two-dimensional MOSFET simulation, the substrate and gate currents resulting from impact ionization generated electron-hole pairs and their injection into the gate oxide are calculated. Our improved injection model uses a non-Maxwellian distribution function and considers separate contributions to the gate current from both thermionic-emission and oxide-barrier tunneling. A fine structure in experimentally observed l; versus us curves for thin-oxide devices at I ) , = f u,, is simulated. Simulation of an LDD MOSFET also reveals the unusual feature of a double hump in the substrate current and an abrupt increase of the gate current beginning at v, = ud.

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Monte-Carlo simulation of noise in GaAs at electric fields up to the critical field

IEEE Electron Device Letters, 2000

ABSTRACT

Computer simulation of boundary condition for Schottky barrier diodes

Electronics Letters, 1989

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Location of turning points for lower hybrid waves in inhomogeneous magnetic fields

Plasma Physics, 1980

ABSTRACT The location and the nature of turning points (mode conversion layers) for the lower hyb... more ABSTRACT The location and the nature of turning points (mode conversion layers) for the lower hybrid wave propagating in a nonuniform magnetoplasma are studied analytically. The study confirms an earlier prediction that the second turning point may completely disappear under certain conditions. A simple graphic method has been developed to determine these conditions and locations of the turning points. This simple method is applicable to any arbitrary plasma density and magnetic field intensity profiles.

Excitation of electrostatic modes by mode conversion-numerical method

Physics of Fluids, 1974

The study of mode conversion between the extraordinary mode and the Bernstein mode in a warm inho... more

A Non-local Formulation Of Impact Ionization For Silicon

by P. Scrobohaci and Ting-wei Tang

[Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD), 1993

ABSTRACT

Monte Carlo Simulation of InGaAs/InA1As HEMTs with a Quantum

In Monte Carlo simulation of high electron mobility transistors (HEMTs), how to position the sour... more In Monte Carlo simulation of high electron mobility transistors (HEMTs), how to position the source and drain contacts will significantly affect the drain current. Unlike many Monte Carlo (MC) simulations of HEMTs in the past, in this work, the source and drain contacts are placed on the top of the caps as in the real device instead of on the side adjacent to the channel. In addition, to take quantum effects into consideration, the effective potential approach of quantum correction has been incorporated into our MC simulator. We have found that the simulated drain current is substantially increased compared to that of using the classical potential.

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Energy-Transport Models for Semiconductor Device Simulation

by Ting-wei Tang and Siegfried Selberherr

Comprehensive Investigation of Quantum Correction Models for Ultrathin Oxide MOS Structures

As MOSFET devices are further scaled into the nanoscale regime, it has become extremely necessary... more As MOSFET devices are further scaled into the nanoscale regime, it has become extremely necessary to include quantum mechanical effects when modeling device transport behavior. Two modeling approaches have been proposed to study the quantum effects: full quantum mechanical models, such as nonequilibrium Green¡¦s function and quantum corrections to the classical transport model. These approaches have been of great interests

Anatomy of Carrier Backscattering in Silicon Nanowire Transistors

2009 13th International Workshop on Computational Electronics, 2009

ABSTRACT We study the physics of carrier backscattering in silicon nanowire transistors by using ... more ABSTRACT We study the physics of carrier backscattering in silicon nanowire transistors by using the numerical solution of the multisubband Boltzmann transport equation, where relevant scattering mechanisms by acoustic and intervalley phonons, surface roughness, and ionized impurities are included, accounting for intrasubband and intersubband, and elastic and inelastic transitions. The validity of several assumptions in the virtual source model is checked against the numerical solution. We have found that scattering processes make it difficult to model the macroscopic quantities at the virtual source without self-consistent simulations.

Surface Roughness Scattering in Ultrathin-Body SOI MOSFETs

Simulation of Semiconductor Processes and Devices 2007, 2007

A rigorous surface roughness scattering model for ultrathin-body SOI MOSFETs is presented, which ... more A rigorous surface roughness scattering model for ultrathin-body SOI MOSFETs is presented, which extends Ando's model for bulk MOSFETs. The matrix element of the scattering potential includes a generalized Prange-Nee term and all the Coulomb interaction terms. Using this model, we study the effects of the silicon body thickness, effective field, and dielectric constant of the insulator on the roughness-limited low-field electron mobility in ultrathin-body SOI MOSFETs.

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A Quantum Correction Model for Nanoscale Double-Gate MOS Devices Under Inversion Conditions

Journal of Computational Electronics, 2003

ABSTRACT A quantum correction model for nanoscale double-gate MOSFETs under inversion conditions ... more ABSTRACT A quantum correction model for nanoscale double-gate MOSFETs under inversion conditions is proposed. Based on the solution of Schrödinger-Poisson equations, the developed quantum correction model is optimized with respect to (i) the left and right positions of the charge concentration peak, (ii) the maximum of the charge concentration, (iii) the total inversion charge sheet density, and (iv) the average inversion charge depth, respectively. This model can predict inversion layer electron density for various oxide thicknesses, silicon film thicknesses, and applied voltages. Compared to the Schrödinger-Poisson results, our model prediction is within 3.0% of accuracy. This quantum correction model has continuous derivatives and is therefore amenable to a device simulator.

Quantum corrected Boltzmann transport model for tunneling effects

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003., 2003

ABSTRACT A quantum correction method based on the effective total potential used for the Monte Ca... more ABSTRACT A quantum correction method based on the effective total potential used for the Monte Carlo simulation is presented. The Bohm-based and Wigner-based quantum correction models are unified under a single effective conduction-band edge (ECBE) method via a density-dependent quantum correction coefficient. The ECBE equation in thermal equilibrium as well as nonequilibrium is derived. This new equation is then applied to the MC simulation of quantum tunneling of a step potential barrier.

Time-Dependent Solution of a Full Hydrodynamic Model Including Convective Terms and Viscous Effect

VLSI Design

Sub-picosecond turn-on transient behavior of ballistic diodes (N+ - N - N+ structures) is studied... more Sub-picosecond turn-on transient behavior of ballistic diodes (N+ - N - N+ structures) is studied by solving a system of time-dependent hydrodynamic (HD) equations. Convective terms as well as viscous effect are included in the study. The simulation result indicates that the diode undergoes approximately one quarter of a plasma oscillation before it relaxes to the steady-state value through collisions.

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Re-examination of the hot-carrier transport model using spherical harmonic expansion of the Boltzmann transport equation

by Haitao Gan and Ting-wei Tang

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116), 1998

The transport coefficients μ, μ&amp;epsi;, D and D &amp;epsi; are extracted from the sphe... more The transport coefficients μ, μ&amp;epsi;, D and D &amp;epsi; are extracted from the spherical harmonic expansion (SHE) of the electron distribution function. The truncation effect of the higher-order term in the SHE on these transport coefficients is studied. The Einstein relation is also examined for hot-carrier transport. Comparison with Monte Carlo (MC) data shows that the modeling of μ, μ&amp;epsi;,

Two formulations of semiconductor transport equations based on spherical harmonic expansion of the Boltzmann transport equation

IEEE Transactions on Electron Devices, 2000

Download

A non-local hydrodynamic model for impact ionization in submicron silicon BJT's

by P. Scrobohaci and Ting-wei Tang

Membrane Technology, 1993

A general purpose hydrodynamic solver for the simulation of semiconductor devices

International Electron Devices and Materials Symposium, 1994

ABSTRACT

Impact ionization coefficient and energy distribution function at high fields in semiconductors

Journal of Applied Physics, 1989

ABSTRACT

Computer simulation of hot-carrier effects in asymmetric LDD and LDS MOSFET devices

IEEE Transactions on Electron Devices, 1989

ABSTRACT

Numerical simulation of avalanche hot-carrier injection in short-channel MOSFET's

IEEE Transactions on Electron Devices, 1988

Download

Monte-Carlo simulation of noise in GaAs at electric fields up to the critical field

IEEE Electron Device Letters, 2000

ABSTRACT

Computer simulation of boundary condition for Schottky barrier diodes

Electronics Letters, 1989

Download

Location of turning points for lower hybrid waves in inhomogeneous magnetic fields

Plasma Physics, 1980

Excitation of electrostatic modes by mode conversion-numerical method

Physics of Fluids, 1974

The study of mode conversion between the extraordinary mode and the Bernstein mode in a warm inho... more

A Non-local Formulation Of Impact Ionization For Silicon

by P. Scrobohaci and Ting-wei Tang

[Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD), 1993

ABSTRACT

Monte Carlo Simulation of InGaAs/InA1As HEMTs with a Quantum

Download

Energy-Transport Models for Semiconductor Device Simulation

by Ting-wei Tang and Siegfried Selberherr

Comprehensive Investigation of Quantum Correction Models for Ultrathin Oxide MOS Structures

Anatomy of Carrier Backscattering in Silicon Nanowire Transistors

2009 13th International Workshop on Computational Electronics, 2009

Surface Roughness Scattering in Ultrathin-Body SOI MOSFETs

Simulation of Semiconductor Processes and Devices 2007, 2007

Download

A Quantum Correction Model for Nanoscale Double-Gate MOS Devices Under Inversion Conditions

Journal of Computational Electronics, 2003

Quantum corrected Boltzmann transport model for tunneling effects

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003., 2003

Time-Dependent Solution of a Full Hydrodynamic Model Including Convective Terms and Viscous Effect

VLSI Design

Download

Re-examination of the hot-carrier transport model using spherical harmonic expansion of the Boltzmann transport equation

by Haitao Gan and Ting-wei Tang

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116), 1998

Ting-wei Tang

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