1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, 1998
ABSTRACT The effects of (Gamma) X-valley mixing in (AlAs)n(GaAs)n (001) superlattices (SLs) on th... more ABSTRACT The effects of (Gamma) X-valley mixing in (AlAs)n(GaAs)n (001) superlattices (SLs) on the electronic and optical properties are theoretically investigated versus the SL period (n equals 1.25) and the band offsets. The calculations are based on both the empirical sp3s* tight-binding model and the surface Green-function-matching method. The results show that the top state of the valence band is always confined to the GaAs slabs, whereas the bottom state of the conduction band (CB) shows different behaviors as it is sensitive to band mixing and, therefore, can control the optical properties of the superlattice. For large values of n (n >= 9) the SL is found to have a direct bandgap at (Gamma) -point and, thus, forms of type-I heterostructure consisting of multiple quantum wells. Whereas for the ultrathin-layer SLs (n = 26 angstroms.
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