Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, 1991
ABSTRACT MOCVD and PE-MOCVD are versatile growth techniques which are capable of producing high q... more ABSTRACT MOCVD and PE-MOCVD are versatile growth techniques which are capable of producing high quality YBCO superconducting films. The use of these methods to grow YBCO films with Tc in the range 88-90 K and Jc(77 K) repeatably in excess of 10 exp 6 A/sq cm is reported. This can be accomplished at substrate temperatures as low as 730 C, in the case of MOCVD, and 670 C for PE-MOCVD, through the use of N2O as the oxidant source gas. Growth at temperatures down to 570 C has been demonstrated but as the cost of Tc decreasing to 72 K. Still, these results are very promising for development of a low temperature process for the growth of YBCO which will be compatible with active device technologies.
Yttria-stabilized zirconia (YSZ) thin films with yttria content between 5 and 30 mol% were deposi... more Yttria-stabilized zirconia (YSZ) thin films with yttria content between 5 and 30 mol% were deposited onto r-plane (101̄2) Al2O3, c-plane (0001) Al2O3 and Si (001) substrates by solid single-source metal organic chemical vapor deposition (MOCVD) from Y(thd)3 and Zr(thd)4 precursors in the temperature range 450–850°C at a pressure of 0.40 kPa. With this delivery technique, growth rates as high as
... YQ Li,a) J. Zhao, CS Chern,b) W. Huang,b) GA Kulesha,@ P. Lu,) B. Gallois,a) P. Norris, 8. K... more ... YQ Li,a) J. Zhao, CS Chern,b) W. Huang,b) GA Kulesha,@ P. Lu,) B. Gallois,a) P. Norris, 8. Kear,b) and F. Cosandeyb) EMCORE Corporation, 35 Elizabeth Avenue, Somerset, New Jersey 08873 (Received ... 0. Marcy, LM Tonge, TJ Marks, BW Wessels, and CR Kannewurf, Appl. ...
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, 1991
ABSTRACT MOCVD and PE-MOCVD are versatile growth techniques which are capable of producing high q... more ABSTRACT MOCVD and PE-MOCVD are versatile growth techniques which are capable of producing high quality YBCO superconducting films. The use of these methods to grow YBCO films with Tc in the range 88-90 K and Jc(77 K) repeatably in excess of 10 exp 6 A/sq cm is reported. This can be accomplished at substrate temperatures as low as 730 C, in the case of MOCVD, and 670 C for PE-MOCVD, through the use of N2O as the oxidant source gas. Growth at temperatures down to 570 C has been demonstrated but as the cost of Tc decreasing to 72 K. Still, these results are very promising for development of a low temperature process for the growth of YBCO which will be compatible with active device technologies.
Yttria-stabilized zirconia (YSZ) thin films with yttria content between 5 and 30 mol% were deposi... more Yttria-stabilized zirconia (YSZ) thin films with yttria content between 5 and 30 mol% were deposited onto r-plane (101̄2) Al2O3, c-plane (0001) Al2O3 and Si (001) substrates by solid single-source metal organic chemical vapor deposition (MOCVD) from Y(thd)3 and Zr(thd)4 precursors in the temperature range 450–850°C at a pressure of 0.40 kPa. With this delivery technique, growth rates as high as
... YQ Li,a) J. Zhao, CS Chern,b) W. Huang,b) GA Kulesha,@ P. Lu,) B. Gallois,a) P. Norris, 8. K... more ... YQ Li,a) J. Zhao, CS Chern,b) W. Huang,b) GA Kulesha,@ P. Lu,) B. Gallois,a) P. Norris, 8. Kear,b) and F. Cosandeyb) EMCORE Corporation, 35 Elizabeth Avenue, Somerset, New Jersey 08873 (Received ... 0. Marcy, LM Tonge, TJ Marks, BW Wessels, and CR Kannewurf, Appl. ...
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