Papers by Delwin L . Elder
IEEE Photonics Technology Letters, 2017
We report on an optical chip-to-chip interconnect solution, thereby demonstrating plasmonics as a... more We report on an optical chip-to-chip interconnect solution, thereby demonstrating plasmonics as a solution for ultra-dense, high-speed short-reach communications. The interconnect comprises a densely integrated plasmonic Mach-Zehnder modulator array that is packaged with standard driving electronics. On the receiver side, a Germanium photodetector array is integrated with trans-impedance amplifiers. A multicore fiber provides a compact optical interface to the array. We demonstrate 4 × 20 Gbit/s on-off keying signaling with direct detection.
Plasmonic Organic Hybrid Modulators—Scaling Highest Speed Photonics to the Microscale
Proceedings of the IEEE, 2016
Direct RF-to-Optical Detection by Plasmonic modulator integrated into a four-leaf-clover antenna
Conference on Lasers and Electro-Optics, 2016
Plasmonic Organic Hybrid Modulators—Scaling Highest Speed Photonics to the Microscale
Proceedings of the IEEE, 2016
Improving the Environmental Performance of In Situ PECVD Chamber Cleaning Processes by studies of CVD Reactor Clean Performance and Field Evaluation of Optimised Processes
Using a common production platform and process (Applied Materials P-5000 DxL, 1.0 µm TEOS), labor... more Using a common production platform and process (Applied Materials P-5000 DxL, 1.0 µm TEOS), laboratory studies demonstrated that the standard C2F6 recipe can be successfully optimised, resulting in significant reduc- tions in emissions (51%) and gas usage (40%). Optimised clean recipes for alternative fluorocarbon gases (C3F8, C4F8 and C4F8O) yield similar reductions but exhibit no significant performance advantages over C2F6,
Surface-lithiated metal oxide nanoparticles for lithium battery electrolytes
Cleaning of processing chambers with dilute NF3 plasmas
Chip-scale frequency comb sources for terabit communications
2014 Xxxith Ursi General Assembly and Scientific Symposium, Aug 1, 2014
Optical Interconnect with Densely Integrated Plasmonic Modulator and Germanium Photodetector Arrays
Optical Fiber Communication Conference, 2016
Structure–function relationship exploration for enhanced thermal stability and electro-optic activity in monolithic organic NLO chromophores
J. Mater. Chem. C, 2016
![Research paper thumbnail of <title>Enhanced lifetime of polymer light-emitting diodes using poly(thieno[3,4-b]thiophene)-based conductive polymers</title>](https://a.academia-assets.com/images/blank-paper.jpg)
<title>Enhanced lifetime of polymer light-emitting diodes using poly(thieno[3,4-b]thiophene)-based conductive polymers</title>
Organic Light Emitting Materials and Devices X, 2006
Poly(thieno[3,4-b]thiophene) (PTT) based transparent conductive polymers have been developed for ... more Poly(thieno[3,4-b]thiophene) (PTT) based transparent conductive polymers have been developed for hole injection layer (HIL) applications in polymer light-emitting devices. Using a second generation material that uses a poly(perfluoroethylene-perfluoroethersulfonic acid) as polymeric dispersant/counter-ion (PTT:PFFSA), significant improvement (up to 6 times with LUMATION Green 1304 as the light emitting layer) in PLED lifetime has been achieved compared to the lifetime of first generation PTT:PSSA (PTT:poly(styrene sulfonic acid)) based devices. Compared with the work function of 5.2 eV for PTT:PSSA film, PTT:PFFSA films have a higher work function of 5.5~5.7 eV. Interestingly, we found that the resistivity of PTT:PFFSA films is dependent on the film preparation conditions such as annealing temperature and time; while the work function of PTT:PFFSA films is independent on the film annealing conditions. We also studied the dependence of the device leakage current and lifetime on the preparation conditions of PTT:PFFSA based HIL films. Higher HIL annealing temperature results in higher device leakage current mainly due to the lower resistivity of the PTT:PFFSA HIL film prepared under such condition. However, the device lifetime is almost independent on the annealing temperature in the studied temperature range from 130 to 210°C using dispersions with PFFSA-to-TT ratios of 12:1 and 18:1.
Conductivity enhancement of conductive polymers by solvent exposure
Antenna Coupled Plasmonic Modulator
Frontiers in Optics 2015, 2015
All-plasmonic Mach–Zehnder modulator enabling optical high-speed communication at the microscale
Nature Photonics, 2015
Plasmonic devices for communications
2015 17th International Conference on Transparent Optical Networks (ICTON), 2015
Coherent Terabit Communications using Chip-scale Frequency Comb Sources
Nonlinear Optics, 2015
Dense Plasmonic Mach-Zehnder Modulator Array for High-Speed Optical Interconnects
Advanced Photonics 2015, 2015
ABSTRACT A plasmonic Mach-Zehnder modulator array with 4x36 Gbit/s capacity is introduced. The de... more ABSTRACT A plasmonic Mach-Zehnder modulator array with 4x36 Gbit/s capacity is introduced. The densely packed devices are connected by a multicore fiber demonstrating a highly scalable interconnect solution in a most compact footprint.
Plasmonic-organic hybrid (POH) modulators for OOK and BPSK signaling at 40 Gbit/s
CLEO: 2015, 2015
We report on high-speed plasmonic-organic hybrid Mach-Zehnder modulators comprising ultra-compact... more We report on high-speed plasmonic-organic hybrid Mach-Zehnder modulators comprising ultra-compact phase shifters with lengths as small as 19 µm. Choosing an optimum phase shifter length of 29 µm, we demonstrate 40 Gbit/s on-off keying (OOK) modulation with direct detection and a BER &amp;amp;amp;amp;amp;amp;lt; 6 × 10(-4). Furthermore, we report on a 29 µm long binary-phase shift keying (BPSK) modulator and show that it operates error-free (BER &amp;amp;amp;amp;amp;amp;lt; 1 × 10(-10)) at data rates up to 40 Gbit/s and with an energy consumption of 70 fJ/bit.
High-Speed Silicon-Organic Hybrid (SOH) Modulators with 230 pm/V Electro-Optic Coefficient Using Advanced Materials
Optical Fiber Communication Conference, 2014
ABSTRACT We report on record-high electro-optic coefficients of up to 230 pm/V in silicon slot wa... more ABSTRACT We report on record-high electro-optic coefficients of up to 230 pm/V in silicon slot waveguide modulators. The modulators allow for low drive voltage at 40 Gbit/s at a device length of only 250 µm.
16QAM Silicon-Organic Hybrid (SOH) Modulator Operating with 0.6 V_pp and 19 fJ/bit at 112 Gbit/s
CLEO: 2014, 2014
ABSTRACT We demonstrate a silicon-based 16QAM modulator with a record-low drive voltage of 0.6Vpp... more ABSTRACT We demonstrate a silicon-based 16QAM modulator with a record-low drive voltage of 0.6Vpp and an energy consumption of 19fJ/bit. The device employs silicon slot waveguides with electro-optic organic cladding and enables data transmission at 112Gbit/s.
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Papers by Delwin L . Elder