Papers by Christoph Brosinsky
2017 IEEE Power & Energy Society General Meeting
2018 IEEE International Energy Conference (ENERGYCON)
Applied Sciences
Synchrophasor based applications become more and more popular in today’s control centers to monit... more Synchrophasor based applications become more and more popular in today’s control centers to monitor and control transient system events. This can ensure secure system operation when dealing with bidirectional power flows, diminishing reserves and an increased number of active grid components. Today’s synchrophasor applications provide a lot of additional information about the dynamic system behavior but without significant improvement of the system operation due to the lack of interpretable and condensed results as well as missing integration into existing decision-making processes. This study presents a holistic framework for novel machine learning based applications analyzing both historical as well as online synchrophasor data streams. Different methods from dimension reduction, anomaly detection as well as time series classification are used to automatically detect disturbances combined with a web-based online visualization tool. This enables automated decision-making processes ...
Electric Power Systems Research
Users may download and print one copy of any publication from the public portal for the purpose... more Users may download and print one copy of any publication from the public portal for the purpose of private study or research. You may not further distribute the material or use it for any profit-making activity or commercial gain You may freely distribute the URL identifying the publication in the public portal If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.
IET Renewable Power Generation
IET Renewable Power Generation
2011 37th IEEE Photovoltaic Specialists Conference, 2011
ABSTRACT
For the passivation of p-type silicon surfaces, we investigate layer systems consisting of a thin... more For the passivation of p-type silicon surfaces, we investigate layer systems consisting of a thin layer of thermally grown SiO 2 and different dielectric capping layers deposited by means of plasma-enhanced chemical vapor deposition (PECVD). We find that the thermal SiO 2 layer thickness strongly impacts the passivation quality and interface parameters of the stacks. Capacitancevoltage measurements reveal that for Al 2 O 3 and SiN x capping layers, an increased thermal SiO 2 film thickness suppresses charge formation at the interface between SiO 2 and the capping layer. Interface trap density and effective carrier lifetime data suggest that a certain thermal SiO 2 thickness is required to achieve appropriate chemical passivation. The combination of a thin thermal SiO 2 layer (∼4 nm) and a PECVD-SiO x capping results in very low surface recombination velocities of a few centimeters per second, measured on p-type 1-Ω•cm float-zone silicon after contact firing and postmetallization annealing. The experimentally observed dependence of the surface recombination velocity on the fixed charge density, gate voltage, and injection density is reproduced very accurately by analytical calculations that use the measured interface trap density and total charge density at the Si/insulator interface. The model also includes additional recombination in the space charge region of inverted surfaces. Index Terms-Dielectric films, interface states, photovoltaic cells, SiO 2. I. INTRODUCTION C URRENTLY, different approaches for the realization of rear-surface-passivated silicon solar cells with local contacts are evaluated. These approaches use dielectric layers or stack systems applied by atomic layer deposition (ALD), plasma-enhanced chemical vapor deposition (PECVD) sput-Manuscript
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Papers by Christoph Brosinsky