Chi-Chang Wu

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National Sun Yat-sen University

冠余陳

University of California, Los Angeles

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Papers by Chi-Chang Wu

Determination of polarization charge density on interface of AlGaN∕GaN heterostructure by electroreflectance

Applied Physics Letters, 2006

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Well aligned ultrasharp nanotip arrays for high-efficiency field emission

The 4th IEEE International NanoElectronics Conference, 2011

ABSTRACT We have fabricated a large area and well aligned ultrasharp nanotip arrays by using phot... more ABSTRACT We have fabricated a large area and well aligned ultrasharp nanotip arrays by using photolithography and reactive ion etching techniques. The apex of the tip can be as sharp as about 3 nm in radius. The mechanism of nanotip formation is that the remained photoresist on top of the tip is gradually reduced with increasing the etching time, and hence sidewall of the tip is pared to form a pointier nanotip. At the end, the photoresist is fully etched away and a pyramid-like shape is formed at the tip-end due to the etch probability of incident ion on the sidewall. The field emission property of the ultrasharp nanotip is measured, and the turn-on field is about 20 MV-cm.

Alternative method of wavelength drift free dual-wavelength heterodyne interferometry for the absolute distance measurement

Optical Review, 2009

Based on the technique of dual-wavelength and principle of heterodyne interferometry, a modified ... more Based on the technique of dual-wavelength and principle of heterodyne interferometry, a modified method for measuring the absolute distance is proposed. Because two test lights suffer from the same influence of wavelength drift in the measurement setup, the minus effect coming from the wavelength drift can be offset. Therefore, the measurement accuracy can be significantly increased. The feasibility of this method was demonstrated with a measurement resolution of about 1.50 mm. This method provides the advantages of a simple optical setup, easy operation and rapid measurement. #

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Nanowire field effect transistor with its sub-picomolar label-free biosensing capability toward a gene mutation

2010 3rd International Nanoelectronics Conference (INEC), 2010

We describe the efficiency of deoxyribonucleic acid (DNA) immobilization onto a nanowire (NW) aft... more We describe the efficiency of deoxyribonucleic acid (DNA) immobilization onto a nanowire (NW) after employing various surface cleaning methods. From surface tension measurements and fluorescence microscopy images of the silicon oxide surfaces, we determined that the effectiveness of surface cleaning using an acetone/ethanol mixture was similar to that of piranha solution (sulfuric acid/hydrogen peroxide). Thus, we employed surface cleaning with

Novel sol-gel derived SONOS-type nanocrystal memory

2010 3rd International Nanoelectronics Conference (INEC), 2010

A nanocrystal (NC) memory by sol-gel spin-coating method was demonstrated. The high-density and i... more A nanocrystal (NC) memory by sol-gel spin-coating method was demonstrated. The high-density and isolated NC was formed by depositing a mixed solution of nickel tetrachloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride with a post-rapid thermal annealing process. The electrical properties in terms of memory window, charge retention, program/erase speed, and endurance were demonstrated. The memory window of the NC memory can be up to 2.8 V; the retention times were extrapolated up to 106 sec for about 5% and 10% charge loss at 25 and 85°C measurement, respectively. The voltage shift after 104 program/erase cycles is less than 1 V. The good electrical performance was attributed to the effects of the high-density isolated NCs.

Absolute distance measurement by using modified dual-wavelength heterodyne Michelson interferometer

Optics Communications, 2009

ABSTRACT This study proposes a modified dual-wavelength heterodyne Michelson interferometer for m... more ABSTRACT This study proposes a modified dual-wavelength heterodyne Michelson interferometer for measuring the absolute distance that can avoid the influence of wavelength drifts. This modified interferometer consists of two conventional Michelson interferometers. A standard plate is introduced in one arm of one Michelson interferometer. The phase differences of p- and s- polarization test lights in the two interferometers can be measured accurately by dual-wavelength heterodyne interferometry. Hence, the absolute distance can be determined by substituting the phase differences into special derived equations. Meanwhile, the test lights suffer from the same wavelength drift effect. Therefore, the negative effect caused by the drift can be offset, and the measurement stability can be significantly increased. The feasibility of this method was demonstrated with a measurement resolution of about 1.36 μm. Additionally, this method has a simple structure, easy operation and rapid measurement.

Reliability of multistacked tantalum-based structure as the barrier film in ultralarge-scale integrated metallization

Microelectronic Engineering, 2005

Diffusion barrier properties of Ta films with and without plasma treatments have been investigate... more Diffusion barrier properties of Ta films with and without plasma treatments have been investigated in the study. The nitrogen-incorporated Ta films were prepared by NH 3 plasma treatment or reactive sputtering. Barrier properties were evaluated by sheet resistance, X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy and reverse-biased junction leakage current.

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Effects of capping layers on the electrical characteristics of nickel silicided junctions

Microelectronic Engineering, 2007

The self-aligned silicidation (SALICIDE) process is one of the critical techniques for ultra larg... more The self-aligned silicidation (SALICIDE) process is one of the critical techniques for ultra large scale integrated (ULSI) circuits, and is more emphasized as the device dimensions become smaller than sub-90 nm. By using this technology, the contact resistance of silicide-Si interface at poly-Si gate and source/drain regions will be decreased, thereby increasing the driving current and the transconductance (Gm) of the MOS device. NiSi is attracted markedly attention owing to its characteristic of low resistance and less Si consumption during Ni silicidation. However, leakage junction current and sheet resistance degradation is the main problem in the NiSi silicidation process. In this paper, effects of capping layer on formation processes and electrical properties of Ni-silicided junctions have been described. A NiSi process with a thin Ti or TiN-capped layer is used to compare with uncapped sample. The uncapped (Ni single layer) and TiN-capped samples are shown to exhibit better thermal stability than the Ti-capped samples from the results of sheet resistance measurement. For the silicided junctions, samples with Ti capping layers exhibit the inferior performance due to larger leakage current density. A high-resistivity Ni x Ti y Si z compound layer is formed on the surface during silicidation for the Ti-capped sample, while the uncapped and TiN-capped samples are not. In addition, it is found that the thickness of NiSi layer, as well as the Ni x Ti y Si z layer, increases with increasing the Ti capping layer thickness. The formation of Ni x Ti y Si z layer not only increases the contact resistance, but also deepens the silicide thickness. Hence, the Ni x Ti y Si z causes larger junction leakage current. compares the sheet resistance of Ni silicide with different capping layer after 300-800 /30 sec annealed in N ℃ 2 . NiSi with low sheet resistance (about 4~5 Ω/sq.) are shown for temperatures ranging from 450 o C to 600 o C. After 600 , ℃ a slight increase of sheet resistance suggests the degradation of electrical performance. The XRD spectra for samples annealed at 400, 450, 600 and 700 o C are shown in Figs. 2(a)-2(d). It is noteworthy that two peaks (about 40.6 and 43.3 degree) are detected for the Ti 30-capped and Ti 10-capped samples, while these peaks can not be seen for uncapped and TiN 30-capped samples. and (b) illustrate the cross-sectional TEM images of the Ti 30-capped and TiN 30-capped samples annealed at 650 o C. We find the Ti 30-capped sample exhibits the double layers, while a single layer for TiN 30-capped samples. The EDS analysis in suggests the top layer is composed of a high-resistivity Ni x Ti y Si z compound and can not be removed by etchant. Similarly, the second layer is assigned to be a relative low-resistivity Ni-Si compound.

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Novel coexisted sol-gel derived poly-Si-oxide-nitride-oxide-silicon type memory

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2007

ABSTRACT The authors use a very simple sol-gel spin coating method at 900 ° C and 1 min rapid the... more ABSTRACT The authors use a very simple sol-gel spin coating method at 900 ° C and 1 min rapid thermal annealing to fabricate three different poly-Si-oxide-nitride-oxide-silicon-type flash memories. The memory windows estimated from the curve of drain current versus applied gate voltage are 3, 3.3, and 4 V for (i) Hf O 2 thin film, (ii) hafnium silicate nanocrystal, and (iii) coexisted hafnium silicate and zirconium silicate nanocrystal memory, respectively. Together with the measurement from gate disturbance and drain disturbance on these fabricated devices, the coexisted nanocrystal devices exhibit better reliability than both the thin film type memory and single nanocrystal type memory.

Complete emissions control for highly fuel-efficient automobiles via a simulated stack of electrochemical-catalytic cells

Energy & Environmental Science, 2011

Simultaneous CO and NOx removal from simulated lean-burn engine exhaust via solid oxide fuel cell with La0.8Sr0.2Mn0.95Cu0.05O3 cathode

Electrochemistry Communications, 2011

Solid oxide fuel cell (SOFC) unit was constructed with Ni-YSZ as the anode, YSZ as the electrolyt... more Solid oxide fuel cell (SOFC) unit was constructed with Ni-YSZ as the anode, YSZ as the electrolyte, and La 0.8 Sr 0.2 Mn 0.95 Cu 0.05 O 3 -Ce 0.9 Gd 0.1 O 1.95 as the cathode. Fixed-voltage tests at 0.6 V were performed at 600 and 750°C with simulated lean-burn engine exhaust passing the cathode. Simultaneous CO and NO x removal over the SOFC cathode has been shown to be feasible. However, electrochemical CO 2 reduction occurred to result in a baseline CO concentration, although smaller than 100 ppm.

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Effect of temperature and concentration on treating NO in simulated diesel exhaust via SOFCs with Cu-added (LaSr)MnO3 cathode

Chemical Engineering Journal, 2011

A solid oxide fuel cell unit is constructed with Ni–YSZ as the anode, YSZ as the electrolyte, and... more A solid oxide fuel cell unit is constructed with Ni–YSZ as the anode, YSZ as the electrolyte, and Cu-added La0.8Sr0.2MnO3–Ce0.9Gd0.1O1.95 as the cathode. Cu addition is done by impregnation and doping, respectively. It is found that zero NOx emissions can be achieved no matter how large the inlet NO concentration is in the simulated diesel exhaust. The major driving force

Lean-burn NOx emission control via simulated stack of solid oxide fuel cells with Cu-added (LaSr)MnO3 cathodes

Chemical Engineering Journal, 2011

A stack of solid oxide fuel cells (SOFCs) can be used as an automotive catalytic converter for le... more A stack of solid oxide fuel cells (SOFCs) can be used as an automotive catalytic converter for lean-burn NO x emission control. With a simulated SOFC stack, it is demonstrated that this converter can reduce NO x in the lean-burn engine exhaust to zero no matter how large the inlet NO x concentration is. An SOFC unit operating at 600 • C was constructed with Ni-YSZ as the anode, YSZ as the electrolyte, and Cu-added La 0.8 Sr 0.2 MnO 3 -Ce 0.9 Gd 0.1 O 1.95 as the cathode. The NO x conversion increases not only with decreasing NO concentration in the low NO concentration range but also with increasing NO concentration in the high NO concentration range. In addition, the NO x conversion increases with increasing O 2 concentration and can increase with adding SO 2 . Simultaneous control of CO emission via oxidation can be performed in this converter.

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Stress-induced morphology and fine-line stability enhancement of NiSi on poly-SiGe with a buffer polycrystalline silicon interlayer

Applied Physics Letters, 2008

... Chi-Chang Wu, Wen-Fa Wu, Fu-Hsiang Ko, Hsin-Chiang You, Wen-Luh Yang. Abstract. ... Eng. 60, ... more

Electrochemical-catalytic conversion for simultaneous NOx and hydrocarbons emissions control of lean-burn gasoline engine

Applied Catalysis B: Environmental, 2011

Electrochemical-catalytic conversion via the electrochemical-catalytic cell (ECC) is effective at... more Electrochemical-catalytic conversion via the electrochemical-catalytic cell (ECC) is effective at 400 • C for simultaneous NO x and hydrocarbons emissions control of lean-burn gasoline engine without consuming any reductant. The NO reaction is direct NO decomposition. The NO x to N 2 rate over the cathode of the ECC can be three orders larger than those over conventional oxide catalysts for NO decomposition. In the high NO x concentration region, the NO conversion increases with increasing NO x concentration; this characteristic allows the engine to be operated at high enough temperature with excess oxygen to result in maximum fuel efficiency. In the low NO x concentration region, the NO conversion also increases with decreasing NO x concentration; this characteristic enables complete conversion of NO and thus can result in zero NO x emission. The NO conversion increases with decreasing temperature, at least till 400 • C. Higher oxygen concentration is beneficial to both the NO conversion and the hydrocarbons oxidation to result in zero pollution.

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Improving high-resistance state uniformity and leakage current for polyimide-based resistive switching memory by rubbing post-treatment

Japanese Journal of Applied Physics, 2015

Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories

Microelectronics Reliability, 2015

Improving Characteristics of Tantalum Oxide Thin Film Devices with Copper Electrodes

Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials, 2004

Research of StemBios Cell Therapy on Dental Implants Containing Nanostructured Surfaces

Implant Dentistry, 2015

The aim of the present study was to examine the osseointegration in low-density bone tissue for S... more The aim of the present study was to examine the osseointegration in low-density bone tissue for SLAffinity-treated implants with StemBios (SB) cell therapy. The morphologies of SLAffinity-treated surfaces were characterized using scanning electron microscopy. In the animal model, implants were installed in the mandibular canine-premolar area of 12 miniature pigs. Each pig received 3 implants of machine, sand blasted, large grit, and acid etched, and SLAffinity-treated implants. In the clinical trial, 10 patients received 1 SLAffinity-treated implant in the maxilla in the posterior area and 1 patient with low bone tissue density received 2 SLAffinity-treated implants with SB cell therapy. Resonance frequency analysis and computed tomography were assessed monthly over the first 3 months after implant placement. The results demonstrated that surface treatment significantly affected early osseointegration in patients who received SB cell therapy. SB cell therapy transferred the stress caused by the implant more uniformly, and the stress decreased with healing time. SLAffinity-treated implants also proved clinically successful after the 3 months. The SLAffinity treatments enhanced osseointegration significantly, especially at early stages of bone tissue healing with SB cell therapy.

Nanocrystallization and interfacial tension of sol-gel derived memory

Applied Physics Letters, 2008

The formation of the nanocrystals (NCs) by using the sol-gel spin-coating method at various annea... more The formation of the nanocrystals (NCs) by using the sol-gel spin-coating method at various annealing temperatures had been studied. The film started to form the islands at 600 °C annealing, and finally transferred into NCs at 900 °C. A model was proposed to explain the transformation of thin film. The morphology of sol-gel thin film at 600 °C annealing was

Determination of polarization charge density on interface of AlGaN∕GaN heterostructure by electroreflectance

Applied Physics Letters, 2006

Download

Well aligned ultrasharp nanotip arrays for high-efficiency field emission

The 4th IEEE International NanoElectronics Conference, 2011

Alternative method of wavelength drift free dual-wavelength heterodyne interferometry for the absolute distance measurement

Optical Review, 2009

Download

Nanowire field effect transistor with its sub-picomolar label-free biosensing capability toward a gene mutation

2010 3rd International Nanoelectronics Conference (INEC), 2010

Novel sol-gel derived SONOS-type nanocrystal memory

2010 3rd International Nanoelectronics Conference (INEC), 2010

Absolute distance measurement by using modified dual-wavelength heterodyne Michelson interferometer

Optics Communications, 2009

Reliability of multistacked tantalum-based structure as the barrier film in ultralarge-scale integrated metallization

Microelectronic Engineering, 2005

Download

Effects of capping layers on the electrical characteristics of nickel silicided junctions

Microelectronic Engineering, 2007

Download

Novel coexisted sol-gel derived poly-Si-oxide-nitride-oxide-silicon type memory

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2007

Complete emissions control for highly fuel-efficient automobiles via a simulated stack of electrochemical-catalytic cells

Energy & Environmental Science, 2011

Simultaneous CO and NOx removal from simulated lean-burn engine exhaust via solid oxide fuel cell with La0.8Sr0.2Mn0.95Cu0.05O3 cathode

Electrochemistry Communications, 2011

Download

Effect of temperature and concentration on treating NO in simulated diesel exhaust via SOFCs with Cu-added (LaSr)MnO3 cathode

Chemical Engineering Journal, 2011

Lean-burn NOx emission control via simulated stack of solid oxide fuel cells with Cu-added (LaSr)MnO3 cathodes

Chemical Engineering Journal, 2011

Download

Stress-induced morphology and fine-line stability enhancement of NiSi on poly-SiGe with a buffer polycrystalline silicon interlayer

Applied Physics Letters, 2008

... Chi-Chang Wu, Wen-Fa Wu, Fu-Hsiang Ko, Hsin-Chiang You, Wen-Luh Yang. Abstract. ... Eng. 60, ... more

Electrochemical-catalytic conversion for simultaneous NOx and hydrocarbons emissions control of lean-burn gasoline engine

Applied Catalysis B: Environmental, 2011

Download

Improving high-resistance state uniformity and leakage current for polyimide-based resistive switching memory by rubbing post-treatment

Japanese Journal of Applied Physics, 2015

Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories

Microelectronics Reliability, 2015

Improving Characteristics of Tantalum Oxide Thin Film Devices with Copper Electrodes

Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials, 2004

Research of StemBios Cell Therapy on Dental Implants Containing Nanostructured Surfaces

Implant Dentistry, 2015

Nanocrystallization and interfacial tension of sol-gel derived memory

Applied Physics Letters, 2008

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