Papers by Benito Gonzalez
ABSTRACT. Objective. To characterize the safety of rituximab (RTX) in combination with biologic d... more ABSTRACT. Objective. To characterize the safety of rituximab (RTX) in combination with biologic disease-modifying antirheumatic drugs (DMARD) in patients with rheumatoid arthritis (RA). Methods. We did an open-label study of the safety and efficacy of RTX in adult patients with active RA and an inadequate response to ≥ 1 biologic for ≥ 12 weeks (stable dose ≥ 4 weeks). RTX (2 × 500 mg) was added to patients' current biologic and nonbiologic DMARD treatment. After 24 weeks, patients with 28-joint Disease Activity Score ≥ 2.6 were eligible for RTX retreatment.
IEEE Transactions on Electron Devices, 2021
Thermal impedance is required to describe static and fast dynamic thermal behavior in silicon-oni... more Thermal impedance is required to describe static and fast dynamic thermal behavior in silicon-oninsulator (SOI) devices. This study presents an empirical physical model, which accounts for gate length, for calculating the thermal impedance of multi-finger partially depleted (PD) SOI MOSFETs at room temperature. For the first time, the parameters of the model are obtained from measurements of ac conductance and the characteristic thermal frequency determination. The model shows decreasing thermal resistance and linearly augmented thermal capacitance with increasing gate length from 0.18 to 2.50 μm. Thus, thermal time constants of ∼760 ns, extracted from a variety of gate lengths, are correctly predicted. Index Terms-Electrothermal characterization, model, silicon-on-insulator (SOI) MOSFET, thermal impedance. I. INTRODUCTION T HE typical thermal model for the temperature rise in devices induced by self-heating effects (SHEs) consists of an equivalent circuit with the thermal resistance, R th , and capacitance, C th , connected in parallel [see Fig. 1(a)]. The first-order R th-C th network was demonstrated to be sufficient for the thermal modeling of silicon-on-insulator (SOI) MOSFETs with intermediate gate lengths [1], [2]. The thermal resistance, which has been extensively studied in SOI MOSFETs [3]-[5], models the static thermal performance of a device. Meanwhile, thermal capacitance is necessary to describe the fast dynamic thermal behavior in SOI devices subjected to abrupt changes in power generation [6], [7]. Thus, the temperature rise in the device channel, T , is given by Z th P, where P is the thermal power dissipated in the device (P ∼ = V d I d , neglecting gate current losses) and Z th , with 1/Z th = 1/R th + j ωC th , its thermal impedance. This thermal model maintains a high degree of simplicity, which
Actualidades Investigativas en Educación, 2009
Se investigo un grupo de 254 estudiantes de una secundaria publica de Matamoros, Tamaulipas, Mexi... more Se investigo un grupo de 254 estudiantes de una secundaria publica de Matamoros, Tamaulipas, Mexico, adaptando el cuestionario utilizado por el Grup de Recerca Educacio i Ciutadani (GREIC) de la Universitat de les Illes Balears. El estudio se basa en un conjunto de 39 preguntas distribuidas en cuatro secciones: Afirmaciones relacionadas con el medio ambiente, para indagar su postura; Preocupacion por el medio ambiente, para identificar el lugar que genera mayor interes; Problemas ambientales, sirvio para identificar el conocimiento de la problematica que afecta a su region y la cuarta seccion Acciones para hacer un mundo mejor, para identificar la disposicion de los estudiantes para mejorar el ambiente. La validacion del cuestionario adaptado refiere un coeficiente del Alfa de Cronbach de 0.862 y los datos en estudio representan de forma generalizada la percepcion ambiental que tienen los estudiantes y manifiestan la importancia de la educacion ambiental. 254 public middle school st...
Poder adquisitivo y precio de entradas de fútbol en España. ¿Es más o menos caro el fútbol ahora que hace 50 años?. El caso del club Atlético de Madrid
espanolEn 1966 se inauguro el Estadio Vicente Calderon con un partido que enfrentaba al conjunto ... more espanolEn 1966 se inauguro el Estadio Vicente Calderon con un partido que enfrentaba al conjunto local, el Atletico de Madrid con el Valencia CF. 50 anos despues se celebro el mismo partido, uno de los clasicos del Campeonato Nacional de Liga en Espana. Hemos realizado una comparacion de los precios de ambos partidos, utilizando deflactores para hacerlos comparativos en terminos reales y analizando tambien el poder adquisitivo en ambos periodos. Curiosamente, mientras que los precios de este partido habian aumentado cerca del 300%, el poder adquisitivo medio medido a traves del PIB per capita tambien habia subido cerca del 300%. Por lo tanto un espanol medio podia comprar un numero de entradas de este espectaculo deportivo similar en los dos periodos (394: 1966; 400:2016). Existe bibliografia que confirma un mismo incremento general de los precios en el sector de la cultura del mismo tipo, mientras que en el conjunto de los sectores los precios han subido en menor medida que la rent...
A case study for financial feasibility of automated costing support in a small machine shop
Lower bounds for the logarithmic Sobolev constant avoiding uniform lower bounds on the Ricci curvature
Mathematische Nachrichten, 1999
ABSTRACT In this paper we obtain a lower bound for the logarithmic Sobolev constant of the operat... more ABSTRACT In this paper we obtain a lower bound for the logarithmic Sobolev constant of the operator on C∞ (M) given by LU f = Δf-(▽U|▽f), where U ∈ C∞ (M), M being a finite dimensional compact Riemannian manifold without boundary, in terms of the spectral gap of LU and the lowest eigenvalue of the operator - LU + V, where V is a function related to U and the Ricci curvature of M. Under suitable conditions and being U ≡ 0, this result improves a previous one by J. -D. DEUSCHEL and D. W. STROOCK (J. Funct. Anal. 92 (1990), 30-48).
A representation for the Fourier transform of members in $scr S'_k$
A class of index transforms associated with Olevskiui's
Abelian theorems for the index 2 F 1 -transform
Revista Técnica de la Facultad de Ingeniería Universidad del Zulia
A convolution theorem for the index 2 F 1 -transform
Bulletin mathématiques de la Société des sciences mathématiques de Roumanie
A convolution theorem for the distributional index 2 F 1 -transform is established. For it, a gen... more A convolution theorem for the distributional index 2 F 1 -transform is established. For it, a generalized translation operator that allows to define a convolution structure is introduced.
Flow past two uniformly rotating cylinders in a side-by-side configuration is studied experimenta... more Flow past two uniformly rotating cylinders in a side-by-side configuration is studied experimentally at Reynolds numbers, Re, varying from 100 to 500 and the ratio of surface speed of cylinder to the free stream velocity, alpha, varying from 0 to 5. The center-to-center spacing between the cylinders, T, normalized by the cylinder diameter, D are 1.8, 2.5, 4.0, and 7.5. Two possibilities of rotations are considered with the cylinder surfaces in between the two cylinders moving upstream in one case (inward rotation case) and downstream in the other (outward rotation case). The diagnostics is done by flow visualization and particle-image-velocimetry. Vortex shedding is found to be suppressed in the inward rotation cases for Re = 200 to 500 and all spacing ratios at alpha=alphas˜2.0. The value of alphas for Re of 100 in this case increases from 1.2 to1.7 as T/D increases from 1.8 to 4.0 and does not increase further with T/D. For outward rotation cases, vortex shedding suppression is ob...
2015 10th Spanish Conference on Electron Devices (CDE), 2015
DC thermal effects modelling for nanometric silicon-on-insulator (SOI) and bulk fin-shaped field-... more DC thermal effects modelling for nanometric silicon-on-insulator (SOI) and bulk fin-shaped field-effect transistors (FinFETs) is presented. Among other features, the model incorporates self-heating effects (SHEs), velocity saturation and short-channel effects. SHEs are analysed in depth by means of thermal resistances, which are determined through an equivalent thermal circuit, accounting for the degraded thermal conductivity of the ultrathin films within the device. Once the thermal resistance for single-fin devices has been validated for different gate lengths and biases, comparing the modelled output characteristics and device temperatures with numerical simulations obtained using Sentaurus Device, the thermal model is extended by circuital analysis to multi-fin devices with multiple fingers.
The index 2 F 1-transform of generalized functions
Revista chilena de pediatría, 1984
A patient with Cronic thrombocytopenic purpura (ITP) not responding to splenectomy, prednisone an... more A patient with Cronic thrombocytopenic purpura (ITP) not responding to splenectomy, prednisone and azathioprine in usual doses was treated with intravenous comercial polivalent gammaglobulin 0,4 g./kg of body weight per day for five days. Platelet counts reached near normal values after six days of treatment, remaining within the normal range during 15 days to fall again to abnormal counts in 30 days. However, this time, a new treatment period with immnunosupressors succesfully rose platelet counts to normal, the response persisting indefinitely. No untoward effects of Ig therapy were observed.
Flow around a single spinning circular cylinder is studied experimentally. The experiments are ca... more Flow around a single spinning circular cylinder is studied experimentally. The experiments are carried out in a free-surface water tunnel at Reynolds numbers (Re) of 200, 300, and 400 and non-dimensional rotation rates (ratio of surface speed of cylinder to free stream velocity), alpha, varying from 0 to 5. The diagnostics was done by flow visualization using hydrogen bubble technique.
N-well resistance modelling in Q-factor of doughnut-shaped PN varactors
Solid-State Electronics, 2015
ABSTRACT In this paper the N-well resistance in doughnut-shaped PN varactors, with the cathode co... more ABSTRACT In this paper the N-well resistance in doughnut-shaped PN varactors, with the cathode connected to an N+ buried layer, has been modelled. The proposed expression for the N-well resistance, numerically validated, is based on the device geometry and overlapping of adjacent basic cells, and adequately reproduces its applied reverse bias voltage dependency. Once the varactor extrinsic parasitic components are extracted considering proximity effects, from anode-to-cathode measured RF admittances, and frequencies ranging from 0.5 GHz to 10 GHz, the impact of the N-well resistance on the experimental varactor quality factor is determined for reverse biases up to 5 V.
Revista ICONO14. Revista científica de Comunicación y Tecnologías emergentes, 2012
La Comunicación Financiera externa en situaciones de crisis. Objetivos y principales conclusiones... more La Comunicación Financiera externa en situaciones de crisis. Objetivos y principales conclusiones del estudio realizado entre analistas e inversores por Estudio de Comunicación en colaboración con el diario Expansión. Retos de futuro en la Comunicación Financiera en España.
VLSI Circuits and Systems II, 2005
In this paper models for the capacitance of cross integrated varactors based in the PN junction a... more In this paper models for the capacitance of cross integrated varactors based in the PN junction are presented. Three different approximations are assumed, in order to reproduce the measured results of the capacitance. The relative error with the measured capacitance is under 10% in all cases.
<title>Temperature in HFETs when operating in DC</title>
VLSI Circuits and Systems, 2003
This work analyses the DC response of an InGaAs channel PHFET when varying temperature. An analyt... more This work analyses the DC response of an InGaAs channel PHFET when varying temperature. An analytic model for the drain current is derived from previous work, incorporating the extrinsic resistances. Experimental output characteristics at different temperatures are compared with those offered by the resulting model and numerical simulations. The DC drain current is obtained introducing the external voltages applied to
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Papers by Benito Gonzalez