Introduction and Aims: IgA nephropathy, the most common primary glomerulonephritis worldwide, can... more Introduction and Aims: IgA nephropathy, the most common primary glomerulonephritis worldwide, can lead to end-stage renal disease and kidney transplantation. Disease recurrence frequently occurs after transplantation. We investigated the predictive value of three markers including galactose-deficient (Gd) IgA1, IgG anti-IgA autoantibodies, IgA-soluble (s) CD89 complexes for IgA nephropathy recurrence. The efficacy of intravenous pulse steroid administration for treatment of recurrent IgA nephropathy was evaluated. Methods: The IgA nephropathy recurrent group (R group, n=11) was compared to matched patients transplanted for IgA nephropathy but without recurrence (NR group, n=13) and healthy subjects (n=22) for proportions of serum Gd-IgA1, IgA-IgG complexes and IgA-sCD89 complexes. Efficacy of pulse steroid therapy in reducing proteinuria was analysed in kidney transplant recipients R group. Results: Pre-transplantation serum proportion of Gd-IgA1 and IgA-IgG complexes were higher in R group compared to NR group or healthy controls (respectively p<0•01 and p<0•001). Both the R and NR groups had increased values of IgA-sCD89 complexes compared to healthy controls, but values were lower in R compared to NR (p<0•01). The ROC curve analysis identified the predictive power of each biomarker (AUCGd-IgA=0•85, p=0•003, CI 0•69-1; AUCIgA-IgG=0•94, p=0•0002, CI 0•86-1; AUCsCD89-IgA=0•89, p=0•001, CI 0•75-1). Finally, steroid treatment markedly reduced proteinuria in the R group (p<0•001) and restored all 3 markers back to their pre-transplantation level. Conclusions: The markers: Gd-IgA1, IgG-IgA and IgA-sCD89 complexes appeared as valuable biomarkers to predict disease recurrence. Intravenous pulse steroid therapy seemed to be an efficient and safe option for recurrent IgA nephropathy. Prospective studies on larger cohortes are needed to confirm these results.
ECS Journal of Solid State Science and Technology, 2019
The aim of this paper is to simulate the behavior of Carbon NanoTube Field Effect Transistors (CN... more The aim of this paper is to simulate the behavior of Carbon NanoTube Field Effect Transistors (CNTFETs) operating in sub-threshold region for ultra-low power applications. In particular we propose the design of a SRAM cell based on CNTFET, in which we use a CNTFET model, already proposed by us. Then, for comparison purposes, the same design procedure is applied to characterize a SRAM cell based on CMOS technology, in which we use the BSIM4 model of the ADS library. In particular the MOSFET parameters are tuned by us through parametric simulations to obtain performance of the MOSFET model comparable to the CNTFET one.
In this paper, we present the effect of process parameters variations on [Formula: see text]–[For... more In this paper, we present the effect of process parameters variations on [Formula: see text]–[Formula: see text] characteristics of LDD MOSFETs through a simulation study, applying also to any submicron device. In particular, we examine the effect of variation of ionic implantation for different channel doping involved in MOSFET production. At last, we examine a linear [Formula: see text]–[Formula: see text] model to simulate more adequately the effects of variation of the process parameters as correction to the base model.
In this paper we present an exhaustive description of the basic types of CNTFETs. In particular w... more In this paper we present an exhaustive description of the basic types of CNTFETs. In particular we review two models, already proposed by us, which allow an easy implementation in circuit simulators, both in analog and in digital applications.
ECS Journal of Solid State Science and Technology, Mar 1, 2022
In this paper we propose a procedure for the study of CNTFETs as memory devices. In particular we... more In this paper we propose a procedure for the study of CNTFETs as memory devices. In particular we analyze the design of a 6-T SRAM, in order to evaluate the writing and reading times, in single and double supplies, the static noise margin, the static power consumption and the power-delay product. For these goals, we use a CNTFET model, already proposed by us. Then we apply the same procedure using the Stanford model in order to compare the obtained results. At last we apply the proposed analysis for the design of a 6-T SRAM in CMOS technology, showing the improvements obtained with CNTFET technology.
A semi-empirical approach to model the temperature effects on I-V characteristics of Carbon Nanot... more A semi-empirical approach to model the temperature effects on I-V characteristics of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. The model includes two thermal parameters describing CNTFET behaviour in terms of saturation drain current and threshold voltage, whose values are extracted from the simulated and trans-characteristics of the device in different temperature conditions. Our results are compared with those of a numerical model online available, obtaining I-V characteristics comparable but with a lower CPU calculation time.
In this paper a 2-D Fourier transform-based analytical method for the thermal and electrical layo... more In this paper a 2-D Fourier transform-based analytical method for the thermal and electrical layout optimisation of multilayer structure solid-state devices is proposed. Compared with previous models presented in literature, it is general and can be easily applied to a large variety of integrated devices, provided that their structure can be represented as an arbitrary number of superimposed layers with a 2-D embedded thermal source, so as to include the effect of the package. The proposed method is independent of the specific physical properties of the layers, hence GaAs MESFETs and HEMTs as well as Silicon and Silicon-On-Insulator MOSFETs and heterostructure LASERs can be analysed. Moreover, it takes into account the dependence of the thermal conductivity of all the layers on the temperature; the heat equation is solved coupled with the device current-voltage relation in order to give physical consistence to the experimental evidence that a temperature increase causes a degradation of the electrical performances and that the electrical power is not uniformly distributed.
Introduction and Aims: IgA nephropathy, the most common primary glomerulonephritis worldwide, can... more Introduction and Aims: IgA nephropathy, the most common primary glomerulonephritis worldwide, can lead to end-stage renal disease and kidney transplantation. Disease recurrence frequently occurs after transplantation. We investigated the predictive value of three markers including galactose-deficient (Gd) IgA1, IgG anti-IgA autoantibodies, IgA-soluble (s) CD89 complexes for IgA nephropathy recurrence. The efficacy of intravenous pulse steroid administration for treatment of recurrent IgA nephropathy was evaluated. Methods: The IgA nephropathy recurrent group (R group, n=11) was compared to matched patients transplanted for IgA nephropathy but without recurrence (NR group, n=13) and healthy subjects (n=22) for proportions of serum Gd-IgA1, IgA-IgG complexes and IgA-sCD89 complexes. Efficacy of pulse steroid therapy in reducing proteinuria was analysed in kidney transplant recipients R group. Results: Pre-transplantation serum proportion of Gd-IgA1 and IgA-IgG complexes were higher in R group compared to NR group or healthy controls (respectively p<0•01 and p<0•001). Both the R and NR groups had increased values of IgA-sCD89 complexes compared to healthy controls, but values were lower in R compared to NR (p<0•01). The ROC curve analysis identified the predictive power of each biomarker (AUCGd-IgA=0•85, p=0•003, CI 0•69-1; AUCIgA-IgG=0•94, p=0•0002, CI 0•86-1; AUCsCD89-IgA=0•89, p=0•001, CI 0•75-1). Finally, steroid treatment markedly reduced proteinuria in the R group (p<0•001) and restored all 3 markers back to their pre-transplantation level. Conclusions: The markers: Gd-IgA1, IgG-IgA and IgA-sCD89 complexes appeared as valuable biomarkers to predict disease recurrence. Intravenous pulse steroid therapy seemed to be an efficient and safe option for recurrent IgA nephropathy. Prospective studies on larger cohortes are needed to confirm these results.
ECS Journal of Solid State Science and Technology, 2019
The aim of this paper is to simulate the behavior of Carbon NanoTube Field Effect Transistors (CN... more The aim of this paper is to simulate the behavior of Carbon NanoTube Field Effect Transistors (CNTFETs) operating in sub-threshold region for ultra-low power applications. In particular we propose the design of a SRAM cell based on CNTFET, in which we use a CNTFET model, already proposed by us. Then, for comparison purposes, the same design procedure is applied to characterize a SRAM cell based on CMOS technology, in which we use the BSIM4 model of the ADS library. In particular the MOSFET parameters are tuned by us through parametric simulations to obtain performance of the MOSFET model comparable to the CNTFET one.
In this paper, we present the effect of process parameters variations on [Formula: see text]–[For... more In this paper, we present the effect of process parameters variations on [Formula: see text]–[Formula: see text] characteristics of LDD MOSFETs through a simulation study, applying also to any submicron device. In particular, we examine the effect of variation of ionic implantation for different channel doping involved in MOSFET production. At last, we examine a linear [Formula: see text]–[Formula: see text] model to simulate more adequately the effects of variation of the process parameters as correction to the base model.
In this paper we present an exhaustive description of the basic types of CNTFETs. In particular w... more In this paper we present an exhaustive description of the basic types of CNTFETs. In particular we review two models, already proposed by us, which allow an easy implementation in circuit simulators, both in analog and in digital applications.
ECS Journal of Solid State Science and Technology, Mar 1, 2022
In this paper we propose a procedure for the study of CNTFETs as memory devices. In particular we... more In this paper we propose a procedure for the study of CNTFETs as memory devices. In particular we analyze the design of a 6-T SRAM, in order to evaluate the writing and reading times, in single and double supplies, the static noise margin, the static power consumption and the power-delay product. For these goals, we use a CNTFET model, already proposed by us. Then we apply the same procedure using the Stanford model in order to compare the obtained results. At last we apply the proposed analysis for the design of a 6-T SRAM in CMOS technology, showing the improvements obtained with CNTFET technology.
A semi-empirical approach to model the temperature effects on I-V characteristics of Carbon Nanot... more A semi-empirical approach to model the temperature effects on I-V characteristics of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. The model includes two thermal parameters describing CNTFET behaviour in terms of saturation drain current and threshold voltage, whose values are extracted from the simulated and trans-characteristics of the device in different temperature conditions. Our results are compared with those of a numerical model online available, obtaining I-V characteristics comparable but with a lower CPU calculation time.
In this paper a 2-D Fourier transform-based analytical method for the thermal and electrical layo... more In this paper a 2-D Fourier transform-based analytical method for the thermal and electrical layout optimisation of multilayer structure solid-state devices is proposed. Compared with previous models presented in literature, it is general and can be easily applied to a large variety of integrated devices, provided that their structure can be represented as an arbitrary number of superimposed layers with a 2-D embedded thermal source, so as to include the effect of the package. The proposed method is independent of the specific physical properties of the layers, hence GaAs MESFETs and HEMTs as well as Silicon and Silicon-On-Insulator MOSFETs and heterostructure LASERs can be analysed. Moreover, it takes into account the dependence of the thermal conductivity of all the layers on the temperature; the heat equation is solved coupled with the device current-voltage relation in order to give physical consistence to the experimental evidence that a temperature increase causes a degradation of the electrical performances and that the electrical power is not uniformly distributed.
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