Papers by Salvador Gimenez
Synthesis Lectures on Emerging Engineering Technologies, 2016
This book aims at describing in detail the different layout techniques for remarkably boosting th... more This book aims at describing in detail the different layout techniques for remarkably boosting the electrical performance and the ionizing radiation tolerance of planar Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFETs), without adding any costs to the current planar Complementary MOS (CMOS) integrated circuits (ICs) manufacturing processes. These innovative layout styles are based on pn junctions engineering between the drain/source and channel regions or simply MOSFET gate layout change. These interesting layout structures are capable of incorporating new effects in the MOSFET structures, such as the Longitudinal Corner Effect (LCE), the Parallel connection of MOSFETs with Different Channel Lengths Effect (PAMDLE), the Deactivation of the Parallel MOSFETs in the Bird's Beak Regions (DEPAMBBRE), and the Drain Leakage Current Reduction Effect (DLECRE), which are still seldom explored by the semiconductor and CMOS ICs industries. Several three-dimensional (3D) numerical simulations and experimental works are referenced in this book to show how these layout techniques can help the designers to reach the analog and digital CMOS ICs specifications with no additional cost. Furthermore, the electrical performance and ionizing radiation robustness of the analog and digital CMOS ICs can significantly be increased by using this gate layout approach.
Journal of Integrated Circuits and Systems
Previous studies have been showing that the first generation of layout styles composed by the Dia... more Previous studies have been showing that the first generation of layout styles composed by the Diamond (hexagonal), Octo (octagonal) and Ellipsoidal gate shapes for implementing of the planar and three-dimensional MOSFETs are is capable of boosting their analog and digital electrical performances and also by reducing used die areas, when we replace conventional Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFETs), that present rectangular gate shape, by those implemented by these innovative layout styles. In order to further boosting these features obtained by the use of first generation of layout styles, we are introducing one of elements of the second generation of layout styles for MOSFETs, intitled Half-Diamond. This new proposal is an evolution of Diamond layout style, in which it is able to preserve the Longitudinal Corner Effect (LCE), the Parallel Connection of MOSFETs with Different Channel Lengths Effect (PAMDLE) and the Deactivation of Parasitic MOSFETs in Bi...
Springer eBooks, 2019
After decades of use in a wide range of applications, with high performance, efficiency and robus... more After decades of use in a wide range of applications, with high performance, efficiency and robustness, the 8051-core microcontrollers have reached a privileged position in the world market of microcontrollers, and to this day, they have been integrated/marketed by several manufacturers. Built by Intel in the 1980s, this project incorporated new features from many other manufacturers (Texas Instruments, Atmel, Philips, Analog Devices, Infineon, etc.), making even more fans. Boosted by its success in the 1990s, this project has caused a true revolution in the field of portable programmable electronic equipment projects This microcontroller is currently used in implantable medical devices (IMD) and in embedded systems for cars, trains, airplanes and aerospace applications, motivating the author to reformulate the book entitled 8051-Core Microcontrollers. This book, whose title is "8051-Core Microcontrollers-Fundamental Concepts and Exercises," describes the basic concepts of the 8051-core microcontroller hardware and software, as well as some examples of applications, which can be used in the free simulators/compilers and low-cost kits. It is divided into nine chapters and an appendix (detailed instructions set). The first chapter presents the basic and fundamental concepts for the understanding of computer systems based in microprocessors/microcontrollers. The second chapter highlights the 8051-core microcontroller hardware. The set of instructions and addressing modes are described and discussed in the third chapter. Chapter 4, considered the most important, explains in detail how a software designer of computer systems should proceed to implement a software project regarding a simple and systematic way, using the flowchart design tool. The author thoroughly presents and discusses the definition, how the subroutines work, and how they can be used in the structuring of the assembly programming language for the implementation of computer systems, so that the reader may become a software designer. The input and output interfaces and how to manipulate the variables of a computer system based in 8051-core microcontrollers are described in Chap. 6. In Chap. 7, the interruptions of the 8051-core microcontroller are presented, and some examples of applications are given and discussed.
Fish Layout Style (“<” Gate Shape) for MOSFET
Springer eBooks, 2016
Experimental Study for Mosfet with Ellipsoidal Layout
Meeting abstracts, 2018
Many efforts in research are conducted and high investments are currently made to create increasi... more Many efforts in research are conducted and high investments are currently made to create increasingly smaller MOSFETs and with better analog and digital electrical characteristics. There are several ways to try to achieve these goals, among them are the use of new materials for the manufacture of semiconductor devices, new planar and threedimensional structures of MOSFETs and new manufacturing processes. Another innovative and fully-Brazilian alternative is the use of new and different layouts for the implementation of these devices. Among the different layouts proposed, we have the ellipsoidal that is the evolution of other layouts, such as the hexagonal and the octagonal. Recently, experimental studies on the advantages and disadvantages between the ellipsoidal layout MOSFET and its corresponding rectangular were conducted showing promising results for this new layout. The main idea of diamond and ellipsoidal layouts was to take advantage of the cornering effects to potentiate the drain current of the device. This effect is called the LCE (Longitudinal Corner Effect) and it is responsible for increasing the longitudinal electric field along the channel of the MOSFET, thus increasing the velocity of drift from the movable carriers in the channel, which ultimately results in a higher drain current (IDS), transconductance, on-state resistance, etc. In addition to the effect cited above, others are still incorporated into the structure of MOSFET ellipsoidal, which can enhance their electric performance. Examples of these new effects are the PAMDLE (Parallel connection of MOSFETs with Different channel Length Effect) and the LECRE (Leakage Current Reduction Effect), which further enhances the drain current around the margins of the device and reduces the leakage current when the device operates in the cut-off region, respectively. The main objective of this study then is to investigate the benefits of this geometry in relation to conventional geometry, to apply this innovative layout in analog and digital integrated circuits. For conducting the study, devices of the same technology were characterized in the ellipsoidal and conventional geometries, in the same bias conditions and through the normalization of curves by the aspect ratio (W/L). For the characterization of the devices was used a chip with the manufacturing technology of TSMC (Taiwan Semiconductor), with a minimum size of 180 nm. These devices were manufactured via MOSIS, through the MEP program. Through the system of electrical characterization of the Keithley were obtained the curves ID x VD and ID x VG for the same conditions of polarizations on both devices. After the normalization of the curves by the aspect ratio, several parameters of the devices were compared to establish how much the gate geometry influenced the electric behavior of the ellipsoidal MOSFET. Figure 1 shows the values of the drain current in function of the gate tension for both devices, with a drain tension of 50 mV. Table I presents the values obtained for the currents of the on-state and off-state (ION and IOFF), as well as the figure of merit ION/IOFF. A comparative study between Ellipsoidal MOSFET and conventional counterpart was performed. The ellipsoidal layout style proved to be a better alternative for the improvement of the performance of devices. Figure 1
Octo Layout Style (Octagonal Gate Shape) for MOSFET
Springer eBooks, 2016
Wave Layout Style (“S” Gate Shape) for MOSFET
Springer eBooks, 2016
(Invited) New Layout Styles to Boost the Electrical, Energy, and Frequency Response Performances of Analog MOSFETs, Considering a Wide Range of High Temperatures
ECS transactions, May 19, 2023
Effect of the green density on the dewaxing behaviour of uniaxially pressed powder compacts
HAL (Le Centre pour la Communication Scientifique Directe), 2006
8051 Microcontroller Instruction Set of the 8051 Core
The instruction set of the 8051 family is directly related to a special function register called ... more The instruction set of the 8051 family is directly related to a special function register called program status word (PSW). This special function register is able to provide the conditions of the processing of the last instruction performed, which is capable of changing it (only some instructions can modify it). It is used by the decision-making instructions to implement control and management software of machines, processes, and tasks to be performed [1–10].
Basic 8051 Core Microcontroller Interruptions
The most common method of communication between humans is by interruptions, e.g., when a person c... more The most common method of communication between humans is by interruptions, e.g., when a person calls/asks another (it is an interruption process). The person who is contacted must usually stop what they are doing and respond to the request of the person that needs to be answered. Afterwards, the person who has been called must return to what they were doing. This same approach has also been implemented in computer systems, for instance, when a transducer (electrical/electronic circuit with a sensor) that is electrically connected to one of its interruption inputs requests an action from the computer system. Therefore, the computer system must stop what it is doing, answer the call of the interruption, and finally resume what it was doing. This strategy of input variable monitoring greatly facilitates the use of microcontrollers in machine control applications [1–10].
Fundamental Concepts of Computer Systems
JICS. Journal of integrated circuits and systems, May 22, 2023
Journal of Electronic Testing, Mar 7, 2017
This article describes in detail a custom, highperformance, compact, flexible and reconfigurable ... more This article describes in detail a custom, highperformance, compact, flexible and reconfigurable test equipment. This measurement system is able to perform, locally or remotely, the electrical characterization of semiconductor devices and integrated circuits (ICs) under ionizing irradiation tests. This measurement platform can be managed remotely through serial, Local Network Area (LAN) link, allowing the electrical characterization of these devices in harsh test environments. Using this customized test measurement system, we were capable to reduce total test time by 1/3 in our TID test application.
Direitos para esta edição cedidos à Atena Editora pelos autores. Open access publication by Atena... more Direitos para esta edição cedidos à Atena Editora pelos autores. Open access publication by Atena Editora Todo o conteúdo deste livro está licenciado sob uma Licença de Atribuição Creative Commons. Atribuição-Não-Comercial-NãoDerivativos 4.0 Internacional (CC BY-NC-ND 4.0). O conteúdo dos artigos e seus dados em sua forma, correção e confiabilidade são de responsabilidade exclusiva dos autores, inclusive não representam necessariamente a posição oficial da Atena Editora. Permitido o download da obra e o compartilhamento desde que sejam atribuídos créditos aos autores, mas sem a possibilidade de alterá-la de nenhuma forma ou utilizá-la para fins comerciais. Todos os manuscritos foram previamente submetidos à avaliação cega pelos pares, membros do Conselho Editorial desta Editora, tendo sido aprovados para a publicação com base em critérios de neutralidade e imparcialidade acadêmica. A Atena Editora é comprometida em garantir a integridade editorial em todas as etapas do processo de publicação, evitando plágio, dados ou resultados fraudulentos e impedindo que interesses financeiros comprometam os padrões éticos da publicação. Situações suspeitas de má conduta científica serão investigadas sob o mais alto padrão de rigor acadêmico e ético.
Using the Octagonal Layout Style to Implement the Pass MOSFET to Improve the Electrical Performance of the CL–LDO Voltage Regulator
ECS transactions, Apr 10, 2018
This paper presents a study by SPICE simulations and experimental data of a capacitor-less low-dr... more This paper presents a study by SPICE simulations and experimental data of a capacitor-less low-dropout (CL–LDO) voltage regulator (VR) by using a novel backend technique to improve its electrical performance. This study regards the use of an octagonal layout style in the pass device MOSFET of a CL–LDO VR to mainly boost its open-loop voltage gain and reduce output impedance. The results show that this innovative layout approach used in the CL–LDO voltage regulator can increase its power supply rejection ratio (PSRR) in approximately 2 dB (60 Hz), without degrading its quiescent current (Iq) (improvement of 2% better), and without wasting additional die area, in comparison to the one that its pass MOSFETs was implemented by using standard rectangular layout style. The 130 nm Bipolar Complementary Metal-Oxide-Semiconductor (BiCMOS) manufacturing process from GlobalFoundries was used to implement both CL–LDO VRs, via MOSIS Educational Program. The die areas of each CL–LDO VRs are the same and equal to 0.00994mm2.
8051 Core Microcontrollers
Springer eBooks, May 23, 2018
This chapter describes the family of 8051 core microcontrollers (originally from Intel), consider... more This chapter describes the family of 8051 core microcontrollers (originally from Intel), considering the main physical (encapsulation and pinning), constructive, electrical (internal architecture), and operating features (Idle and low power, among others).
LCE and PAMDLE Effects From Diamond Layout for MOSFETs at High-Temperature Ranges
IEEE Transactions on Electron Devices, Aug 1, 2021
This article presents, for the first time, a study about of behavior of the intrinsic effects fro... more This article presents, for the first time, a study about of behavior of the intrinsic effects from diamond layout style [longitudinal corner effect (LCE) and PArallel connection of MOSFETs with Different channel Lengths Effect (PAMDLE)] for metal–oxide–semiconductor field-effect transistors (MOSFETs) influenced by wide high-temperature ranges. These effects are capable of boosting the electrical performance of analog MOSFETs in relation to that of the standard MOSFET (rectangular gate shape). First, we have developed an experimental comparative study between MOSFETs implemented with the hexagonal layout style diamond MOSFET (DM) and its rectangular MOSFET (RM) counterpart, regarding that they present the same channel width and gate area, operating in a wide high-temperature range (from 300 to 573 K). These devices were manufactured with the technology of bulk complementary MOS (CMOS) integrated circuits (ICs) of 180 nm. The experimental results have shown that DM has obtained a better electrical performance of analog MOSFETs than the one observed in RM counterpart (for example, gains of 67% for saturation drain current and 90% for the transconductance), regardless of temperatures in which they were exposed. 3-D numerical simulations were used to justify the better electrical performance of DMs due to the LCE and PAMDLE effects, in relation to one of the RM counterparts, by observing the behavior of electrostatic potentials, longitudinal electric fields, and drain current densities of the devices as the temperature increases. Besides, a study about the short-channel effect has shown that DM can suppress this effect more effectively than RM at room temperature due to a smaller reduction in effective channel length of DM.
Springer eBooks, 2016
This book aims at describing in detail the different layout techniques for remarkably boosting th... more This book aims at describing in detail the different layout techniques for remarkably boosting the electrical performance and the ionizing radiation tolerance of planar Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFETs), without adding any costs to the current planar Complementary MOS (CMOS) integrated circuits (ICs) manufacturing processes. These innovative layout styles are based on pn junctions engineering between the drain/source and channel regions or simply MOSFET gate layout change. These interesting layout structures are capable of incorporating new effects in the MOSFET structures, such as the Longitudinal Corner Effect (LCE), the Parallel connection of MOSFETs with Different Channel Lengths Effect (PAMDLE), the Deactivation of the Parallel MOSFETs in the Bird's Beak Regions (DEPAMBBRE), and the Drain Leakage Current Reduction Effect (DLECRE), which are still seldom explored by the semiconductor and CMOS ICs industries. Several three-dimensional (3D) numerical simulations and experimental works are referenced in this book to show how these layout techniques can help the designers to reach the analog and digital CMOS ICs specifications with no additional cost. Furthermore, the electrical performance and ionizing radiation robustness of the analog and digital CMOS ICs can significantly be increased by using this gate layout approach.
JICS. Journal of integrated circuits and systems, Sep 17, 2022
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Papers by Salvador Gimenez