n層の英語

By cooling the (SiO2/Ta2O5)n layer 210, the mutual diffusion of Ta2O5 and SiO2 is prevented, and crystallizing heat treatment is enabled.例文帳に追加

（SiO_2 /Ta_2O_5）^n 層210の冷却でTa_2O_5 とSiO_2の相互拡散が防止され、結晶化熱処理が可能になる。 - 特許庁

In IGBT having at least a p+n-pn+ structure from a collector side to an emitter side, and an n layer having high concentration compared with an n- layer between the n- layer and a p layer, an n layer having the further high concentration compared with the n layer is formed between the n- layer and the p layer.例文帳に追加

コレクタ側からエミッタ側に向かって少なくともｐ＋ｎ−ｐｎ＋構造と、ｎ−層とｐ層との間にｎ−層よりも高濃度のｎ層と有するIGBTにおいて、ｎ−層とp層との間にn層よりさらに高濃度のn層を形成する。 - 特許庁

The process for producing free-standing III-N layer comprises depositing at least one first III-N layer 15 by means of molecular beam epitaxy on an Li(Al, Ga)O_x substrate 7, where 1≤x≤3.例文帳に追加

Li(Al, Ga)O_X基板（１≦ｘ≦３）７上に、分子線エピタキシ法により少なくとも１つの第一のIII-N層１５を堆積させる工程を備える。 - 特許庁

The semiconductor device includes: a device substrate which has a top surface side and a reverse surface side; an interconnection structure which is arranged on the top surface side of the device substrate, and has n metal layers; and a bonding pad which is drawn through the interconnection structure, and comes into direct contact with an (n)th metal layer among the n metal layers.例文帳に追加

表面側及び裏面側を有するデバイス基板、前記デバイス基板の前記表面側に配置され、n層数の金属層を有する相互接続構造、及び前記相互接続構造を通過して延伸し、前記n層数の金属層の前記第n番目の金属層に直接接触するボンディングパッドを含む半導体デバイス。 - 特許庁

The terminal connection structure further includes a winding portion 2 in which the number of superconductor layers is n layers (four layers) at a point immediately before a point where the superconductor layers are brought into contact with the usual conductive terminal hardware F1.例文帳に追加

そして、超電導導体層が常電導端末金具F1と接触する直前箇所で、超電導導体層がn層(4層)である巻回部2を備える。 - 特許庁

The thin-film resonator 10 is such that n layers (n is a natural number of 3 or above) of piezoelectric layers (first piezoelectric layer 111, second piezoelectric layer 112, third piezoelectric layer...) are provided between a first electrode 121 and a second electrode 122.例文帳に追加

薄膜共振子１０は、第１電極１２１と第２電極１２２の間にn層（nは3以上の自然数）の圧電体層（第１圧電体層１１１、第２圧電体層１１２、第３圧電体層. - 特許庁

During cooling of the structure 15 and 17 produced in this way, the Li(Al, Ga)O_x substrate 7 completely or largely flakes off the III-N layers 15, or residues 7' can be removed if necessary, by using etching liquid, such as aqua regia.例文帳に追加

このようにして製造された層１５、１７の冷却中、Li(Al, Ga)O_X基板７は全てあるいは大部分がIII-N層１５から脱落し、必要ならば、王水などのエッチング液により残留物７’を除去する。 - 特許庁

To provide a process for producing III-N layer, wherein III denotes at least one element from group III of the periodic table selected from among Al, Ga and In, having suitable properties which is substantially free of impurities from uncontrolled incorporation, and to provide a free-standing III-N substrate.例文帳に追加

実質的に非制御下の混入による不純物を実質的に含まず、好適な特性を備えるIII-N層（IIIが周期表第III族の、Al、GaおよびInから選択される少なくとも一元素を示す）の製造方法および自立III-N基板を提供する。 - 特許庁