bulk stressとは 意味・読み方・使い方

To provide a forming method of a semiconductor bulk crystal which has a large crystal size, and in which contamination by impurities from the crucible is reduced and effect of stress and strain from the wall of the crucible is reduced.例文帳に追加

ルツボ壁からの核形成によらず凝固成長を開始して、結晶粒径が大きく、ルツボ壁からの不純物による汚染が少なく、ルツボ壁からの応力・歪みの影響が少ないバルク結晶の作成方法を提供する。 - 特許庁

To provide a shaft for a torque sensor capable of increasing the output of the sensor with an adverse effect of thermal stress reduced even if the length of a magnetostrictive member is reduced in the event that the shaft for the torque sensor is made by joining support parts of another kind of metal to the bulk magnetostrictive member put between them.例文帳に追加

トルクセンサ用シャフトをバルクの磁歪材を挟むように他の支持金属を接合して構成した場合に、磁歪材の長さを短くしても熱応力による悪影響を少なくでき、センサの出力を高くすることを可能にする。 - 特許庁

In a method for manufacturing the PTFE porous body, a pore-forming agent is mixed into a PTFE powder, the mixture is molded into a bulk shape while applying a shear stress in a prescribed direction, and the pore-forming agent is subsequently removed to form the pores.例文帳に追加

ＰＴＦＥ粉末に、造孔剤を混合し、これらを所定の方向にせん断応力を加えながらバルク型の形状に成形した後、上記造孔剤を除去することによって気孔を設ける上記ＰＴＦＥン多孔体の製造方法。 - 特許庁

The bulk textured yarn is produced by the knit-deknit processing of a false-twist crimped yarn having a crimp recovery (CR) of ≤20%, a crimp developing elongation (TR) of ≤10% and maximum value of the shrinking stress of ≥0.1 CN/dtex and ≤1.0 CN/dtex.例文帳に追加

伸縮復元率（ＣＲ）が２０％以下、捲縮発現伸長率（ＴＲ）が１０％以下で、収縮応力のＭＡＸ値が０．１ＣＮ／ｄｔｅｘ以上１．０ＣＮ／ｄｔｅｘ以下の仮ヨリ捲縮糸がニットデニット加工されてなることを特徴とする嵩高加工糸。 - 特許庁

A material sample is screened based on a large number of different bulk physical properties including Young's modulus (bending, uniaxial drawing, biaxial drawing, shearing), hardness (indentation), fracture (stress and strain at the time of fracture, toughness) adhesion (tackiness, loop tackiness), flow (viscosity, melt flow index, rheology), and the like.例文帳に追加

ヤング率（曲げ、一軸延伸、二軸圧縮、剪断）、硬度（インデンテーション）、破壊（破壊時の応力と歪み、靭性）、接着（タック性、ループタック性）、及び流れ（粘度、メルトフローインデックス、レオロジー）その他を含む、多数の異なるバルクな物理特性に基づいて、材料サンプルをスクリーニングする。 - 特許庁

To provide a device and method for determining a crystal structure of ceramics capable of determining a crystal state of thin film ceramics of which crystal state is more difficult to be obtained than a bulk state especially with an influence such as stress, more easily, in a shorter time, and with a higher accuracy than by a conventional method.例文帳に追加

特に応力などの影響によってバルク状態よりも結晶状態の把握が困難な薄膜セラミックスの結晶状態を、上記の方法より簡便にかつ短時間で、しかも高精度に判定できる、セラミックスの結晶構造判定装置、および結晶構造判定方法を提供する。 - 特許庁