breakdown potentialとは 意味・読み方・使い方

To compose a safety circuit which protects a measuring instrument from breakdown caused by the abnormal potential of the BNC common ground terminal of the measuring instrument and protects a user from the abnormal potential of relatively economical components.例文帳に追加

測定機器のＢＮＣ共通接地端子の異常電位による測定機器破壊や、ユーザを保護するための安全回路を比較的安価な部品で構成する。 - 特許庁

Breakdown voltage between a potential of terminal T2 and ground potential (or power supply voltage) by increasing a gate width of a MOS transistor included in a switch SW2.例文帳に追加

スイッチＳＷ２に含まれるＭＯＳトランジスタのゲート幅を大きくすることにより端子Ｔ２の電位と接地電位（あるいは電源電位）との間の耐圧が向上する。 - 特許庁

With such a pattern, the breakdown voltage in a case where the first n source region 12 is made to have high potential can be made higher than that of a case where the second n source region 14 is made to have high potential.例文帳に追加

このパターンにすることで、第１ｎソース領域１２を高電位にした場合に第２ｎソース領域１４を高電位にする場合より高耐圧にできる。 - 特許庁

In this case, the potential to be applied to the common electrode 3a is made larger and the potential to be applied to the pixel electrode 3b is made to be within the tolerance range of the breakdown voltage of a TFT(thin film transistor) 4.例文帳に追加

この場合、共通電極３ａに印加する方の電位を大きくして、画素電極３ｂに印加する電位はＴＦＴ４の耐圧許容範囲とする。 - 特許庁

Thus, if the potential of a steel skeleton portion 4 rises, damage to the metal pipe 1 due to dielectric breakdown can be prevented by causing dielectric breakdown in the steel skeleton portion 4 and the metal shielding layer 3.例文帳に追加

これにより、鉄骨部４が上昇電位したとき、鉄骨部４と金属遮へい層３で絶縁破壊させ、金属配管１の絶縁破壊による損傷を防ぐことが可能となる。 - 特許庁

Two regions having different potential in a high breakdown voltage IC chip 10 (concretely speaking, a high breakdown voltage junction termination structure 23 and a GND reference circuit formation region 22 for surrounding a floating potential reference circuit formation region 21) are further surrounded by a trench structure 7.例文帳に追加

高耐圧ＩＣチップ１０内の電位が異なる２つの領域（具体的には浮遊電位基準回路形成領域２１を囲う高耐圧接合終端構造２３及びＧＮＤ基準回路形成領域２２）を、さらにトレンチ構造７で囲う。 - 特許庁

To provide a semiconductor device in which a low-potential reference circuit and a high-potential reference circuit are mixedly loaded and the level shift between the low-potential reference circuit and the high-potential reference circuit can be preformed, and which is compact and is superior in breakdown voltage.例文帳に追加

低電位基準回路と高電位基準回路とを混載させた半導体装置であって，低電位基準回路と高電位基準回路との間でレベルシフトを行うことができ，コンパクトであるとともに耐圧に優れた半導体装置を提供すること。 - 特許庁

The smallest space is provided with a value that causes no short circuit due to dielectric breakdown when the potential difference V1 is imparted between the bit lines.例文帳に追加

最小スペースは、ビット線間に電位差Ｖ１が与えられたときに、絶縁破壊による配線ショートが生じない値である。 - 特許庁