{"@attributes":{"name":"Francis Balestra","pid":"60\/695","n":"16"},"person":{"@attributes":{"key":"homepages\/60\/695","mdate":"2009-06-09"},"author":"Francis Balestra"},"r":[{"inproceedings":{"@attributes":{"key":"conf\/irps\/MariaBTGZC23","mdate":"2025-03-03"},"author":["F. Serra Di Santa Maria","Francis Balestra","Christoforos G. Theodorou","G\u00e9rard Ghibaudo","Cezar B. Zota","Eunjung Cha"],"title":"Experimental Study of Self-Heating Effect in InGaAs HEMTs for Quantum Technologies Down to 10K.","pages":"1-4","year":"2023","booktitle":"IRPS","ee":"https:\/\/doi.org\/10.1109\/IRPS48203.2023.10118294","crossref":"conf\/irps\/2023","url":"db\/conf\/irps\/irps2023.html#MariaBTGZC23"}},{"inproceedings":{"@attributes":{"key":"conf\/essderc\/MariaTBGCZ22","mdate":"2025-03-03"},"author":["F. Serra Di Santa Maria","Christoforos G. Theodorou","Francis Balestra","G\u00e9rard Ghibaudo","Eunjung Cha","Cezar B. Zota"],"title":"In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications.","pages":"257-260","year":"2022","booktitle":"ESSDERC","ee":"https:\/\/doi.org\/10.1109\/ESSDERC55479.2022.9947142","crossref":"conf\/essderc\/2022","url":"db\/conf\/essderc\/essderc2022.html#MariaTBGCZ22"}},{"inproceedings":{"@attributes":{"key":"conf\/asicon\/Balestra21","mdate":"2021-12-06"},"author":"Francis Balestra","title":"Status and trends in Nanoelectronic devices for the ultimate integration of ICs.","pages":"1-4","year":"2021","booktitle":"ASICON","ee":"https:\/\/doi.org\/10.1109\/ASICON52560.2021.9620257","crossref":"conf\/asicon\/2021","url":"db\/conf\/asicon\/asicon2021.html#Balestra21"}},{"inproceedings":{"@attributes":{"key":"conf\/asicon\/Balestra19","mdate":"2020-02-12"},"author":"Francis Balestra","title":"Nanoscale Devices for the end of the Roadmap.","pages":"1-4","year":"2019","booktitle":"ASICON","ee":"https:\/\/doi.org\/10.1109\/ASICON47005.2019.8983541","crossref":"conf\/asicon\/2019","url":"db\/conf\/asicon\/asicon2019.html#Balestra19"}},{"article":{"@attributes":{"key":"journals\/mr\/DobriJPJCPB17","mdate":"2024-10-06"},"author":["Adam Dobri","Simon Jeannot","Fausto Piazza","Carine Jahan","Jean Coignus","Luca Perniola","Francis Balestra"],"title":"Development and application of the Oxide Stress Separation technique for the measurement of ONO leakage currents at low electric fields in 40 nm floating gate embedded-flash memory.","pages":"47-51","year":"2017","volume":"69","journal":"Microelectron. Reliab.","ee":"https:\/\/doi.org\/10.1016\/j.microrel.2016.12.006","url":"db\/journals\/mr\/mr69.html#DobriJPJCPB17"}},{"inproceedings":{"@attributes":{"key":"conf\/asicon\/Balestra17","mdate":"2018-01-17"},"author":"Francis Balestra","title":"Ultra low power and high performance nanoelectronic devices.","pages":"1049-1052","year":"2017","booktitle":"ASICON","ee":"https:\/\/doi.org\/10.1109\/ASICON.2017.8252659","crossref":"conf\/asicon\/2017","url":"db\/conf\/asicon\/asicon2017.html#Balestra17"}},{"inproceedings":{"@attributes":{"key":"conf\/essderc\/AkkezCFBRBG12","mdate":"2022-01-03"},"author":["Imed Ben Akkez","Antoine Cros","Claire Fenouillet-B\u00e9ranger","Fr\u00e9d\u00e9ric Boeuf","Quentin Rafhay","Francis Balestra","G\u00e9rard Ghibaudo"],"title":"New parameter extraction method based on split C-V for FDSOI MOSFETs.","pages":"217-220","year":"2012","booktitle":"ESSDERC","ee":"https:\/\/doi.org\/10.1109\/ESSDERC.2012.6343372","crossref":"conf\/essderc\/2012","url":"db\/conf\/essderc\/essderc2012.html#AkkezCFBRBG12"}},{"article":{"@attributes":{"key":"journals\/mr\/ExarchosPJB09","mdate":"2022-10-02"},"author":["M. A. Exarchos","George J. Papaioannou","Jalal Jomaah","Francis Balestra"],"title":"Investigation of defects introduced by static and dynamic hot carrier stress on SOI partially depleted body-contact MOSFETs.","pages":"1018-1023","year":"2009","volume":"49","journal":"Microelectron. Reliab.","number":"9-11","ee":"https:\/\/doi.org\/10.1016\/j.microrel.2009.07.024","url":"db\/journals\/mr\/mr49.html#ExarchosPJB09"}},{"article":{"@attributes":{"key":"journals\/mj\/BenfdilaB06","mdate":"2020-02-22"},"author":["A. Benfdila","Francis Balestra"],"title":"On the drain current saturation in short channel MOSFETs.","pages":"635-641","year":"2006","volume":"37","journal":"Microelectron. J.","number":"7","ee":"https:\/\/doi.org\/10.1016\/j.mejo.2005.09.020","url":"db\/journals\/mj\/mj37.html#BenfdilaB06"}},{"article":{"@attributes":{"key":"journals\/mr\/ExarchosPJB05","mdate":"2022-10-02"},"author":["M. A. Exarchos","George J. Papaioannou","Jalal Jomaah","Francis Balestra"],"title":"The impact of static and dynamic degradation on SOI \"smart-cut\" floating body MOSFETs.","pages":"1386-1389","year":"2005","volume":"45","journal":"Microelectron. Reliab.","number":"9-11","ee":"https:\/\/doi.org\/10.1016\/j.microrel.2005.07.027","url":"db\/journals\/mr\/mr45.html#ExarchosPJB05"}},{"article":{"@attributes":{"key":"journals\/mr\/ExarchosDJPB04","mdate":"2020-02-22"},"author":["M. A. Exarchos","Fran\u00e7ois Dieudonn\u00e9","Jalal Jomaah","George J. Papaioannou","Francis Balestra"],"title":"On the defects introduced by AC and DC hot carrier stress in SOI PD MOSFETs.","pages":"1643-1647","year":"2004","volume":"44","journal":"Microelectron. Reliab.","number":"9-11","ee":"https:\/\/doi.org\/10.1016\/j.microrel.2004.07.084","url":"db\/journals\/mr\/mr44.html#ExarchosDJPB04"}},{"article":{"@attributes":{"key":"journals\/mr\/DieudonneHJB03","mdate":"2020-02-22"},"author":["Fran\u00e7ois Dieudonn\u00e9","S\u00e9bastien Haendler","Jalal Jomaah","Francis Balestra"],"title":"Low frequency noise in 0.12 mum partially and fully depleted SOI technology.","pages":"243-248","year":"2003","volume":"43","journal":"Microelectron. Reliab.","number":"2","ee":"https:\/\/doi.org\/10.1016\/S0026-2714(02)00279-2","url":"db\/journals\/mr\/mr43.html#DieudonneHJB03"}},{"article":{"@attributes":{"key":"journals\/mr\/CretuBGG02","mdate":"2025-11-07"},"author":["Bogdan Cretu","Francis Balestra","G\u00e9rard Ghibaudo","Georges Gu\u00e9gan"],"title":"Origin of hot carrier degradation in advanced nMOSFET devices.","pages":"1405-1408","year":"2002","volume":"42","journal":"Microelectron. Reliab.","number":"9-11","ee":"https:\/\/doi.org\/10.1016\/S0026-2714(02)00159-2","url":"db\/journals\/mr\/mr42.html#CretuBGG02"}},{"article":{"@attributes":{"key":"journals\/mr\/HaendlerJGB01","mdate":"2020-02-22"},"author":["S\u00e9bastien Haendler","Jalal Jomaah","G\u00e9rard Ghibaudo","Francis Balestra"],"title":"Improved analysis of low frequency noise in dynamic threshold MOS\/SOI transistors.","pages":"855-860","year":"2001","volume":"41","journal":"Microelectron. Reliab.","number":"6","ee":"https:\/\/doi.org\/10.1016\/S0026-2714(01)00021-X","url":"db\/journals\/mr\/mr41.html#HaendlerJGB01"}},{"article":{"@attributes":{"key":"journals\/mr\/DieudonneDJRB01","mdate":"2020-02-22"},"author":["Fran\u00e7ois Dieudonn\u00e9","F. Daug\u00e9","Jalal Jomaah","C. Raynaud","Francis Balestra"],"title":"An overview of hot-carrier induced degradation in 0.25 mum Partially and Fully Depleted SOI N-MOSFET's.","pages":"1417-1420","year":"2001","volume":"41","journal":"Microelectron. Reliab.","number":"9-10","url":"db\/journals\/mr\/mr41.html#DieudonneDJRB01","ee":"https:\/\/doi.org\/10.1016\/S0026-2714(01)00165-2"}},{"inproceedings":{"@attributes":{"key":"conf\/icecsys\/RozeauHJBBRP00","mdate":"2021-01-20"},"author":["O. Rozeau","S\u00e9bastien Haendler","Jalal Jomaah","J. Boussey","Francis Balestra","C. Raynaud","J. L. Pelloie"],"title":"0.25 \u03bcm SOI technologies performance for low-power radio-frequency applications.","pages":"45-48","year":"2000","booktitle":"ICECS","ee":"https:\/\/doi.org\/10.1109\/ICECS.2000.911481","crossref":"conf\/icecsys\/2000","url":"db\/conf\/icecsys\/icecsys2000.html#RozeauHJBBRP00"}}],"coauthors":{"@attributes":{"n":"29","nc":"1"},"co":[{"@attributes":{"c":"0"},"na":"Imed Ben Akkez"},{"@attributes":{"c":"-1"},"na":"A. Benfdila"},{"@attributes":{"c":"0"},"na":"Fr\u00e9d\u00e9ric Boeuf"},{"@attributes":{"c":"0"},"na":"J. Boussey"},{"@attributes":{"c":"0"},"na":"Eunjung Cha"},{"@attributes":{"c":"0"},"na":"Jean Coignus"},{"@attributes":{"c":"0"},"na":"Bogdan Cretu"},{"@attributes":{"c":"0"},"na":"Antoine Cros"},{"@attributes":{"c":"0"},"na":"F. Daug\u00e9"},{"@attributes":{"c":"0"},"na":"Fran\u00e7ois Dieudonn\u00e9"},{"@attributes":{"c":"0"},"na":"Adam Dobri"},{"@attributes":{"c":"0"},"na":"M. A. Exarchos"},{"@attributes":{"c":"0"},"na":"Claire Fenouillet-B\u00e9ranger"},{"@attributes":{"c":"0"},"na":"G\u00e9rard Ghibaudo"},{"@attributes":{"c":"0"},"na":"Georges Gu\u00e9gan"},{"@attributes":{"c":"0"},"na":"S\u00e9bastien Haendler"},{"@attributes":{"c":"0"},"na":"Carine Jahan"},{"@attributes":{"c":"0"},"na":"Simon Jeannot"},{"@attributes":{"c":"0"},"na":"Jalal Jomaah"},{"@attributes":{"c":"0"},"na":"F. Serra Di Santa Maria"},{"@attributes":{"c":"0"},"na":"George J. Papaioannou"},{"@attributes":{"c":"0"},"na":"J. L. Pelloie"},{"@attributes":{"c":"0"},"na":"Luca Perniola"},{"@attributes":{"c":"0"},"na":"Fausto Piazza"},{"@attributes":{"c":"0"},"na":"Quentin Rafhay"},{"@attributes":{"c":"0"},"na":"C. Raynaud"},{"@attributes":{"c":"0"},"na":"O. Rozeau"},{"@attributes":{"c":"0"},"na":"Christoforos G. Theodorou"},{"@attributes":{"c":"0"},"na":"Cezar B. Zota"}]}}