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2020 – today
- 2024
[j3]Hsin-Cheng Lin
, Wei-Teng Hsu, Tsai-Yu Chung, He-Wen Shen, Ching-Wang Yao, Tao Chou, Li-Kai Wang, Chee Wee Liu:
RF Performance Benchmark of Nanosheets, Nanowires, FinFETs, and TreeFETs. IEEE Access 12: 70512-70518 (2024)- [j2]Zefu Zhao, Yun-Wen Chen, Yu-Rui Chen, Chee Wee Liu:
Engineering Ferroelectric HZO With n+-Si/Ge Substrates Achieving High 2Pr=84 μC/cm2 and Endurance >1E11. IEEE Access 12: 71598-71605 (2024) - [c13]Zefu Zhao, Yu-Rui Chen, Yu-Tsung Liao, Yun-Wen Chen, Wan-Hsuan Hsieh, Jer-Fu Wang, Yu-An Chen, Hao-Yi Lu, Wei-Teng Hsu, Dai-Ying Lee, Ming-Hsiu Lee, Chee Wee Liu:
Engineering HZO by Flat Amorphous TiN with 0.3nm Roughness Achieving Uniform c-Axis Alignment, Record High Breakdown Field (~10nm HZO), and Record Final 2Pr of 56 μC/cm2 with Endurance > 4E12. VLSI Technology and Circuits 2024: 1-2 - 2023
- [c12]Yu-Rui Chen, Yi-Chun Liu, Zefu Zhao, Wan-Hsuan Hsieh, Jia-Yang Lee, Chien-Te Tu, Bo-Wei Huang, Jer-Fu Wang, Shee-Jier Chueh, Yifan Xing, Guan-Hua Chen, Hung-Chun Chou, Dong Soo Woo, Min-Hung Lee, Chee Wee Liu:
First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles. VLSI Technology and Circuits 2023: 1-2 - [c11]Jih-Chao Chiu, Eknath Sarkar, Yuan-Ming Liu, Yu-Ciao Chen, Yu-Cheng Fan, Chee Wee Liu:
First Demonstration of a-IGZO GAA Nanosheet FETs Featuring Achievable SS=61mV/dec, Ioff<10-7 μA/μm, DIBL =44mV/V, Positive VT, and Process Temp. of 300 °C. VLSI Technology and Circuits 2023: 1-2 - [c10]Kuo-Yu Hsiang, J.-Y. Lee, F.-S. Chang, Z.-F. Lou, Z.-X. Li, Z.-H. Li, J.-H. Chen, Chee Wee Liu, T.-H. Hou, Min-Hung Lee:
FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations. VLSI Technology and Circuits 2023: 1-2 - [c9]J.-Y. Lee, F.-S. Chang, Kuo-Yu Hsiang, P.-H. Chen, Z.-F. Luo, Z.-X. Li, J.-H. Tsai, Chee Wee Liu, Min-Hung Lee:
3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs. VLSI Technology and Circuits 2023: 1-2 - [c8]Yi-Chun Liu, Yu-Rui Chen, Yun-Wen Chen, Hsin-Cheng Lin, Wan-Hsuan Hsieh, Chien-Te Tu, Bo-Wei Huang, Wei-Jen Chen, Chun-Yi Cheng, Shee-Jier Chueh, Chee Wee Liu:
Extremely High-κ Hf0.2Zr0.8O2 Gate Stacks Integrated into Ge0.95Si0.05 Nanowire and Nanosheet nFETs Featuring Respective Record Ion per Footprint of 9200μA/μm and Record Ion per Stack of 360μA at VOV=VDS=0.5V. VLSI Technology and Circuits 2023: 1-2 - [c7]Zefu Zhao, Yu-Rui Chen, Yun-Wen Chen, Wan-Hsuan Hsieh, Jer-Fu Wang, Jia-Yang Lee, Yifan Xing, Guan-Hua Chen, Chee Wee Liu:
Towards Epitaxial Ferroelectric HZO on n+-Si/Ge Substrates Achieving Record 2Pr = 84 μC/cm² and Endurance > 1E11. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c6]H.-L. Chiang, J.-F. Wang, K.-H. Lin, C.-H. Nien, J.-J. Wu, Kuo-Yu Hsiang, C.-P. Chuu, Yun-Wen Chen, X. W. Zhang, Chee Wee Liu, Tahui Wang, C. C. Wang, Min-Hung Lee, M.-F. Chang, C.-S. Chang, T. C. Chen:
Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array. VLSI Technology and Circuits 2022: 361-362 - [c5]Chung-En Tsai, Chun-Yi Cheng, Bo-Wei Huang, Hsin-Cheng Lin, Tao Chou, Chien-Te Tu, Yi-Chun Liu, Sun-Rong Jan, Yu-Rui Chen, Wan-Hsuan Hsieh, Kung-Ying Chiu, Shee-Jier Chueh, Chee Wee Liu:
Nearly Ideal Subthreshold Swing and Delay Reduction of Stacked Nanosheets Using Ultrathin Bodies. VLSI Technology and Circuits 2022: 401-402
2010 – 2019
- 2018
- [c4]Pin-Shiang Chen, Shou-Chung Lee, A. S. Oates, Chee Wee Liu:
BEOL TDDB reliability modeling and lifetime prediction using critical energy to breakdown. IRPS 2018: 6 - [c3]Zong-You Luo, Ya-Jui Tsou, Yi-Cheng Dong, Ching Lu, Chee Wee Liu:
Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Utilizing Voltage-Controlled Magnetic Anisotropy Pulse Width Optimization. NVMTS 2018: 1-5 - 2015
- [c2]Chee Wee Liu, I.-H. Wong, Shu-Han Hsu, C.-H. Huang, Shu-Han Hsu:
Advanced germanium channel transistors (invited). ASICON 2015: 1-4 - 2012
- [c1]P. L. Chen, James Su, M. H. Shiao, M. N. Chang, C. H. Lee, Chee Wee Liu:
Scanning electron beam induced deposition for conductive tip modification. NEMS 2012: 553-556 - 2010
- [j1]Chu-Hsuan Lin, Chee Wee Liu:
Metal-Insulator-Semiconductor Photodetectors. Sensors 10(10): 8797-8826 (2010)
Coauthor Index
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