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ORCIDYue Hao 0001
Person information
- affiliation: Xidian University, State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xi'an, China
- affiliation (PhD 1990): Xi'an Jiao Tong University, China
Other persons with the same name
- Yue Hao — disambiguation page
- Yue Hao 0002
![[0000-0002-4189-5010]](https://dblp.dagstuhl.de/img/orcid-mark.12x12.png "0000-0002-4189-5010")
— University of Amsterdam, Computational Science Lab, Informatics Institute, Faculty of Science, Netherlands - Yue Hao 0003 — George Mason University, Department of Computer Science, Fairfax, VA, USA
- Yue Hao 0004 — Lawrence Livermore National Laboratory, CA, USA
- Yue Hao 0005 — Lanzhou University, School of Mathematics and Statistics, China
- Yue Hao 0006 — China Mobile Research Institute, Beijing, China
- Yue Hao 0007 — Beijing Institute of Technology, School of Integrated Circuits and Electronics, China
- Yue Hao 0008 — Harbin Medical University, Department of Neurobiology, China
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2020 – today
- 2025
[j64]Qiuxia Wu, Yue Peng, Wenwu Xiao, Wenxuan Ma, Shuo Zhang, Litao Sun, Chunfu Zhang, Xiaohua Ma, Yue Hao:
Physics based circuit compatible model for hybrid antiferroelectric random access memory. Sci. China Inf. Sci. 68(1) (2025)- [j63]Yitao Feng, Hong Zhou, Sami Alghamdi, Hao Fang, Xiaorong Zhang, Yanbo Chen, Guotao Tian, Saud Wasly, Yue Hao, Jincheng Zhang:
1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations. Sci. China Inf. Sci. 68(2) (2025) - [j62]Tongtong Wang, Yong Zhang, Danyang Yao, Zhi Jiang, Dongxin Tan, Jie Wen, Qiyu Yang, Xuetao Gan, Yan Liu, Yue Hao, Genquan Han:
Electro-optic tuning in ferroelectric capacitor with photonic crystal nanobeam cavity. Sci. China Inf. Sci. 68(2) (2025) - [j61]Lingjie Qin, Jiejie Zhu, Bowen Zhang, Yuxi Zhou, Huantao Duan, Huimei Ma, Mengdi Li, Simei Huang, Jin Rao, Xiaohua Ma, Yue Hao:
Al2O3/AlN/GaN MOS-HEMTs on 6-inch silicon substrate with high transconductance and state-of-the-art fmax × LG. Sci. China Inf. Sci. 68(3) (2025) - [j60]Chaoqun Zhang, Hong Zhou, Sami Alghamdi, Kun Zhang, Zhihong Liu, Yue Hao, Jingcheng Zhang:
24.4 THz·V fT×BV figure-of-merit AlN/GaN/AlN MISHEMTs with thin AlN buffer layer. Sci. China Inf. Sci. 68(3) (2025) - [j59]Can Gong, Minhan Mi, Yuwei Zhou, Pengfei Wang, Hanzhen Li, Xinyi Wen, Ting Meng, Sirui An, Xiang Du, Kai Cheng, Meng Zhang, Qing Zhu, Xiaohua Ma, Yue Hao:
High linearity GaN HEMT by optimized three-dimensional-gated modulation via top-MIS-gate nanowire channel structure. Sci. China Inf. Sci. 68(4) (2025) - [j58]Mao Jia, Bin Hou, Ling Yang, Meng Zhang, Mei Wu, Hao Lu, Xitong Hong, Zhiqiang Xue, Jiale Du, Qingyuan Chang, Qian Xiao, Xiaohua Ma, Yue Hao:
Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT. Sci. China Inf. Sci. 68(5) (2025) - [j57]Yao Li, Chenxu Wang, Qun Li, Jinfeng Zhang, Kai Su, Jichao Hu, Tao Lin, Zeyang Ren, Jiaduo Zhu, Yachao Zhang, Yue Hao:
Potential of boron nitride/diamond heterostructures for n- and p-type conduction. Sci. China Inf. Sci. 68(8) (2025) - [j56]Wen-Liang Liu, Jing-Ya Deng, Chupeng Yi, Zi-Yue Zhao, Ting Feng, Xin Liu, Yang Lu, Xiao-Hua Ma, Yue Hao:
Class-F-1 GaN Power Amplifier Integrated Active Antenna With Increased Efficiency for Wireless Power Transmission Applications. IEEE Internet Things J. 12(3): 2486-2497 (2025) - [j55]Xuan Huang, Lin-An Yang, Jian-Hua Zhou, Xin-Yi Wang, Xiao-Hua Ma, Yue Hao:
Study of GaN Schottky barrier IMPATT diodes with a self-aligned field plate for terahertz applications. Microelectron. J. 157: 106572 (2025) - [j54]Xuan Huang, Lin-An Yang, Jian-Hua Zhou, Xin-Yi Wang, Dong-Liang Chen, Xiaohua Ma, Yue Hao:
A comprehensive study on the electrical effects of avalanche region on GaN Schottky barrier IMPATT diodes through injection phases. Microelectron. J. 165: 106818 (2025) - [j53]Wenzhuo Liu, Shuiying Xiang, Tao Zhang, Yanan Han, Yahui Zhang, Xingxing Guo, Licun Yu, Yue Hao:
S4-KD: A single step spiking SiamFC+ + for object tracking with knowledge distillation. Neural Networks 188: 107478 (2025) - [j52]Peijun Ma, Jie Li, Hongjin Liu, Jiangyi Shi, Shaolin Zhang, Weitao Pan, Yue Hao:
Hardware Trojan Detection Methods for Gate-Level Netlists Based on Graph Neural Networks. IEEE Trans. Computers 74(5): 1470-1481 (2025) - [j51]Zhijian Hao, Chenlong He, Jiaming Liu, Qi Zheng, Jinchang Xu, Peijun Ma, Xiaohua Ma, Yue Hao:
A Novel Transform Accelerator With Fast Kernel Selection and Efficient Transform Circuit. IEEE Trans. Circuits Syst. I Regul. Pap. 72(6): 2726-2739 (2025) - [j50]Longyang Yu, Sheng-Lei Zhao, Xuejing Sun, Wei Mu, Xiufeng Song, Shuzhen You, Yue Hao, Jincheng Zhang:
Symmetrical GaN-Based Vertical Module With Low Interference Integration and High Thermal Performance for PoL Converters. IEEE Trans. Ind. Electron. 72(12): 13164-13175 (2025) - [j49]Peijun Ma, Ge Shang, Hongjin Liu, Jiangyi Shi, Weitao Pan, Yan Zhang, Yue Hao:
GNN-Based Hardware Trojan Detection at Register Transfer Level Leveraging Multiple-Category Features. IEEE Trans. Very Large Scale Integr. Syst. 33(3): 831-840 (2025) - [j48]Peijun Ma, Ge Shang, Hongjin Liu, Jiangyi Shi, Weitao Pan, Yan Zhang, Yue Hao:
Corrections to "GNN-Based Hardware Trojan Detection at Register Transfer Level Leveraging Multiple-Category Features". IEEE Trans. Very Large Scale Integr. Syst. 33(3): 902 (2025) - [c15]Zhijian Hao, Jiaming Liu, Chenlong He, Qi Zheng, Shushi Chen, Jinchang Xu, Yue Hao, Xiao Yan, Xiaohua Ma:
A High-Precision and Low-Cost Approximate Transform Accelerator for Video Coding. DAC 2025: 1-7 - [i4]Zekun Wang, Binghao Yue, Weitao Pan, Jiangyi Shi, Yue Hao:
Design of a Timer Queue Supporting Dynamic Update Operations. CoRR abs/2508.10283 (2025) - [i3]Mengting Yu, Shuiying Xiang, Changjian Xie, Yonghang Chen, Haowen Zhao, Xingxing Guo, Yahui Zhang, Yanan Han, Yue Hao:
Hardware-Software Collaborative Computing of Photonic Spiking Reinforcement Learning for Robotic Continuous Control. CoRR abs/2512.00427 (2025) - 2024
- [j47]Wei Zhu, Yi-Xing He, Hao-Nan Li, Xian-Qin Liu, Siwen Zhang, Lei Wang, Jiang Zhu, Yue-Qi Wang, Jincheng Zhang, Yue Hao, Haijiao Harsan Ma:
Cascade and Extensible In-Memory Arithmetic Computing in 2T1R ReRAM Arrays Using Time-Sum-Logic Design. IEEE Access 12: 104081-104090 (2024) - [j46]Sirui An, Minhan Mi, Pengfei Wang, Sijia Liu, Qing Zhu, Meng Zhang, Zhihong Chen, Jielong Liu, Siyin Guo, Can Gong, Xiaohua Ma, Yue Hao:
A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness. Sci. China Inf. Sci. 67(1) (2024) - [j45]Chunzhou Shi, Ling Yang, Meng Zhang, Hao Lu, Mei Wu, Bin Hou, Xuerui Niu, Qian Yu, Wenliang Liu, Wenze Gao, Xiaohua Ma, Yue Hao:
Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure. Sci. China Inf. Sci. 67(4) (2024) - [j44]Wen Hong, Chao Zhang, Fang Zhang, Xuefeng Zheng, Xiaohua Ma, Yue Hao:
Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate. Sci. China Inf. Sci. 67(5) (2024) - [j43]Hanghai Du, Lu Hao, Zhihong Liu, Zeyu Song, Yachao Zhang, Kui Dang, Jin Zhou, Jing Ning, Zan Li, Jincheng Zhang, Yue Hao:
High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz. Sci. China Inf. Sci. 67(6) (2024) - [j42]Hao Qiu, Zhihao Yu, Tiange Zhao, Qi Zhang, Mingsheng Xu, Peifeng Li, Taotao Li, Wenzhong Bao, Yang Chai, Shula Chen, Yiqi Chen, Hui-Ming Cheng, Daoxin Dai, Zengfeng Di, Zhuo Dong, Xidong Duan, Yuhan Feng, Yu Fu, Jingshu Guo, Pengwen Guo, Yue Hao, Jun He, Xiao He, Jingyi Hu, Weida Hu, Zehua Hu, Xinyue Huang, Ziyang Huang, Ali Imran, Ziqiang Kong, Jia Li, Qian Li, Weisheng Li, Lei Liao, Bilu Liu, Can Liu, Chunsen Liu, Guanyu Liu, Kaihui Liu, Liwei Liu, Sheng Liu, Yuan Liu, Donglin Lu, Likuan Ma, Feng Miao, Zhenhua Ni, Jing Ning, Anlian Pan, Tian-Ling Ren, Haowen Shu, Litao Sun, Yue Sun, Quanyang Tao, Ziao Tian, Dong Wang, Hao Wang, Haomin Wang, Jialong Wang, Junyong Wang, Wenhui Wang, Xingjun Wang, Yeliang Wang, Yuwei Wang, Zhenyu Wang, Yao Wen, Haidi Wu, Hongzhao Wu, Jiangbin Wu, Yanqing Wu, Longfei Xia, Baixu Xiang, Luwen Xing, Qihua Xiong, Xiong Xiong, Jeffrey Xu, Tao Xu, Yang Xu, Liu Yang, Yi Yang, Yuekun Yang, Lei Ye, Yu Ye, Bin Yu, Ting Yu, Hui Zeng, Guangyu Zhang, Hongyun Zhang, Jincheng Zhang, Kai Zhang, Tao Zhang, Xinbo Zhang, Yanfeng Zhang, Chunsong Zhao, Yuda Zhao, Ting Zheng, Peng Zhou, Shaohua Kevin Zhou, Yuxuan Zhu, Deren Yang, Yi Shi, Han Wang, Xinran Wang:
Two-dimensional materials for future information technology: status and prospects. Sci. China Inf. Sci. 67(6) (2024) - [j41]Yong Zhang, Dongxin Tan, Cizhe Fang, Zheng-Dong Luo, Qiyu Yang, Qiao Zhang, Yu Zhang, Xuetao Gan, Yan Liu, Yue Hao, Genquan Han:
Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic. Sci. China Inf. Sci. 67(9) (2024) - [j40]Ruoying Kanyang, Cizhe Fang, Yibo Wang, Xiaoxi Li, Xiangyu Zeng, Yan Liu, Yue Hao, Genquan Han:
Tunable lithium niobate metasurfaces for phase-only modulation based on quasi-bound states in the continuum. Sci. China Inf. Sci. 67(11) (2024) - [j39]Qingyuan Chang, Bin Hou, Ling Yang, Mei Wu, Meng Zhang, Hao Lu, Fuchun Jia, Xuerui Niu, Chunzhou Shi, Jiale Du, Mao Jia, Qian Yu, Shiming Li, Youjun Zhu, Xiaohua Ma, Yue Hao:
High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation. Sci. China Inf. Sci. 67(12) (2024) - [j38]Yahui Feng, Hongxia Guo, Wuying Ma, Jiawen Hu, Xiaoping Ouyang, Jinxin Zhang, Fengqi Zhang, Hong Zhang, Ruxue Bai, Xiaohua Ma, Yue Hao:
Effect of 60Coγ ray radiation on electrical properties of SiGe HBTs at low temperatures. Microelectron. J. 144: 106058 (2024) - [j37]Xin-Yi Wang, Lin-An Yang, Xuan Huang, Jian-Hua Zhou, Xiao-Hua Ma, Yue Hao:
Low-high-low doped Ga2O3 Schottky barrier IMPATT diodes on various crystal orientations for terahertz applications. Microelectron. J. 151: 106350 (2024) - [j36]Wenzhuo Liu, Shuying Xiang, Tao Zhang, Yanan Han, Xingxing Guo, Yahui Zhang, Yue Hao:
Judgmentally adjusted Q-values based on Q-ensemble for offline reinforcement learning. Neural Comput. Appl. 36(25): 15255-15277 (2024) - [c14]Min Zhou, Hong Zhou, Jincheng Zhang, Yue Hao:
$\beta$-Ga2O3-on-SiC RF MOSFETs $\beta$. TENCON 2024: 454-455 - [c13]Min Zhou, Hong Zhou, Mengwei Si, Guangjie Gao, Xiaojin Chen, Xiaoxiao Zhu, Kui Dang, Peijun Ma, Xiaohua Ma, Xuefeng Zheng, Zhihong Liu, Jincheng Zhang, Yuhao Zhang, Yue Hao:
71 GHz-fmax β-Ga2O3-on-SiC RF Power MOSFETs with Record Pout=3.1 W/mm and PAE=50.8% at 2 GHz, Pout= 2.3 W/mm at 4 GHz, and Low Microwave Noise Figure. VLSI Technology and Circuits 2024: 1-2 - 2023
- [j35]Yilin Chen, Qing Zhu, Jiejie Zhu, Minhan Mi, Meng Zhang, Yuwei Zhou, Ziyue Zhao, Xiaohua Ma, Yue Hao:
Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light. Sci. China Inf. Sci. 66(2) (2023) - [j34]Sheng-Lei Zhao, Jincheng Zhang, Yachao Zhang, Lansheng Feng, Shuang Liu, Xiufeng Song, Yixin Yao, Jun Luo, Zhihong Liu, Shengrui Xu, Yue Hao:
1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate. Sci. China Inf. Sci. 66(2) (2023) - [j33]Ren Huang, Weihang Zhang, Jincheng Zhang, Chunxu Su, Xi Liu, Liyu Fu, Yue Hao:
2.29-kV GaN-based double-channel Schottky barrier diodes on Si substrates with high VON uniformity. Sci. China Inf. Sci. 66(6) (2023) - [j32]Xiaole Jia, Yibo Wang, Jinyu Yang, Yan Liu, Yue Hao, Genquan Han:
A compact model of DC I-V characteristics for depleted Ga2O3 MOSFETs. Microelectron. J. 140: 105920 (2023) - [c12]Pengfei Dong, Chenlu Wang, Qinglong Yan, Yingming Wang, Jian Wang, Sami Alghamdi, Zhihong Liu, Jincheng Zhang, Hong Zhou, Yue Hao:
Ga2O3 Heterojunction PN Diodes with Suppressed Background Carrier Concentration for Improved Breakdown Voltage. DRC 2023: 1-2 - 2022
- [j31]Xin Gan, Yueying Zhang, Yupeng Hui, Shaoxuan Liu, Lei Wang, Jincheng Zhang, Yue Hao, Haijiao Harsan Ma:
Controlling Memristance and Negative Differential Resistance in Point-Contacted Metal-Oxides-Metal Heterojunctions: Role of Oxygen Vacancy Electromigration and Electron Hopping. Adv. Intell. Syst. 4(6) (2022) - [j30]Haiyong Wang, Wei Mao, Shenglei Zhao, Yuanhao He, Jiabo Chen, Ming Du, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao:
Unidirectional p-GaN gate HEMT with composite source-drain field plates. Sci. China Inf. Sci. 65(2) (2022) - [j29]Dujun Zhao, Zhaoxi Wu, Chao Duan, Bo Mei, Zhongyang Li, Zhongxu Wang, Qing Tang, Qing Yang, Yinhe Wu, Weihang Zhang, Zhihong Liu, Shenglei Zhao, Jincheng Zhang, Yue Hao:
Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate. Sci. China Inf. Sci. 65(2) (2022) - [j28]Ziwei Song, Shuiying Xiang, Xingyu Cao, Shihao Zhao, Yue Hao:
Experimental demonstration of photonic spike-timing-dependent plasticity based on a VCSOA. Sci. China Inf. Sci. 65(8): 1-10 (2022) - [j27]Yinhe Wu, Jincheng Zhang, Shenglei Zhao, Zhaoxi Wu, Zhongxu Wang, Bo Mei, Chao Duan, Dujun Zhao, Weihang Zhang, Zhihong Liu, Yue Hao:
Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs. Sci. China Inf. Sci. 65(8): 1-7 (2022) - [j26]Siyu Liu, Xiaohua Ma, Jiejie Zhu, Minhan Mi, Jingshu Guo, Jielong Liu, Yilin Chen, Qing Zhu, Ling Yang, Yue Hao:
Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method. Sci. China Inf. Sci. 65(10) (2022) - [j25]Qing Wan, Changjin Wan, Huaqiang Wu, Yuchao Yang, Xiaohe Huang, Peng Zhou, Lin Chen, Tian-Yu Wang, Yi Li, Kanhao Xue, Yu-Hui He, Xiangshui Miao, Xi Li, Chenchen Xie, Houpeng Chen, Zhitang Song, Hong Wang, Yue Hao, Junyao Zhang, Jia Huang, Zheng Yu Ren, Li Qiang Zhu, Jianyu Du, Chen Ge, Yang Liu, Guanglong Ding, Ye Zhou, Su-Ting Han, Guosheng Wang, Xiao Yu, Bing Chen, Zhufei Chu, Lunyao Wang, Yinshui Xia, Chen Mu, Feng Lin, Chixiao Chen, Bojun Cheng, Yannan Xing, Weitao Zeng, Hong Chen, Lei Yu, Giacomo Indiveri, Ning Qiao:
2022 roadmap on neuromorphic devices and applications research in China. Neuromorph. Comput. Eng. 2(4): 42501 (2022) - [j24]Yuchen Wang, Xiaohua Ma, Yang Lu, Bochao Zhao, Ziyue Zhao, Chupeng Yi, Ling Yang, Jiangyi Shi, Yue Hao:
A Broadband Amplifier With Flat Bandwidth for Modulator and Measurement Driver Circuits. IEEE Trans. Instrum. Meas. 71: 1-9 (2022) - [c11]Lulu Chou, Xiao Yu, Huan Liu, Yan Liu, Genquan Han, Yue Hao:
Systematic Study on Positive Bias Temperature Instability(PBTI) of ZrO2-based Ge nMOSFETs with Interlayer Passivations. ICICDT 2022: 12-15 - [c10]Hao Lu, Likun Zhou, Longge Deng, Ling Yang, Bin Hou, Xiaohua Ma, Yue Hao:
First Demonstration of High PAE Performance Using InGaN Channel HEMT for 5G RF Applications. ICTA 2022: 30-31 - [c9]Pengfei Wang, Minhan Mi, Sirui An, Xiang Du, Xiaohua Ma, Yue Hao:
A Novel Concept of using Double Threshold Voltage Coupling to Improve the linearity of AlGaN/GaN HEMTs for millimeter-wave applications. ICTA 2022: 114-115 - [i2]Shuiying Xiang, Yuechun Shi, Xingxing Guo, Yahui Zhang, Hongji Wang, Dianzhuang Zheng, Ziwei Song, Yanan Han, Shuang Gao, Shihao Zhao, Biling Gu, Hailing Wang, Xiaojun Zhu, Lianping Hou, Xiangfei Chen, Wanhua Zheng, Xiaohua Ma, Yue Hao:
Hardware-algorithm collaborative computing with photonic spiking neuron chip based on integrated Fabry-Pérot laser with saturable absorber. CoRR abs/2204.08362 (2022) - [i1]Shuiying Xiang, Tao Zhang, Shuqing Jiang, Yanan Han, Yahui Zhang, Chenyang Du, Xingxing Guo, Licun Yu, Yuechun Shi, Yue Hao:
Spiking SiamFC++: Deep Spiking Neural Network for Object Tracking. CoRR abs/2209.12010 (2022) - 2021
- [j23]Yahui Zhang, Shuiying Xiang, Xingxing Guo, Aijun Wen, Yue Hao:
A modified supervised learning rule for training a photonic spiking neural network to recognize digital patterns. Sci. China Inf. Sci. 64(2) (2021) - [j22]Huan Liu, Genquan Han, Jiuren Zhou, Yan Liu, Yue Hao:
High mobility germanium-on-insulator p-channel FinFETs. Sci. China Inf. Sci. 64(4) (2021) - [j21]Yue Hao, Shuiying Xiang, Genquan Han, Jincheng Zhang, Xiaohua Ma, Zhangming Zhu, Xingxing Guo, Yahui Zhang, Yanan Han, Ziwei Song, Yan Liu, Ling Yang, Hong Zhou, Jiangyi Shi, Wei Zhang, Min Xu, Weisheng Zhao, Biao Pan, Yangqi Huang, Qi Liu, Yimao Cai, Jian Zhu, Xin Ou, Tiangui You, Huaqiang Wu, Bin Gao, Zhiyong Zhang, Guoping Guo, Yonghua Chen, Yong Liu, Xiangfei Chen, Chunlai Xue, Xingjun Wang, Lixia Zhao, Xihua Zou, Lianshan Yan, Ming Li:
Recent progress of integrated circuits and optoelectronic chips. Sci. China Inf. Sci. 64(10) (2021) - [j20]Shuiying Xiang, Zhenxing Ren, Ziwei Song, Yahui Zhang, Xingxing Guo, Genquan Han, Yue Hao:
Computing Primitive of Fully VCSEL-Based All-Optical Spiking Neural Network for Supervised Learning and Pattern Classification. IEEE Trans. Neural Networks Learn. Syst. 32(6): 2494-2505 (2021) - [c8]Yanshuang Ba, Sunjie HuangFu, Miaomiao Li, Junxiao Ma, Weidong Zhu, Dazheng Chen, He Xi, Jincheng Zhang, Chunfu Zhang, Yue Hao:
All-Inorganic Two-Dimensional Ruddlesden-Popper Perovskite Cs2PbI2Cl2 Nanosheet Films for Self-Powered, Visible-Blind UV Photodetectors. ASICON 2021: 1-4 - [c7]Hao Lu, Xiaohua Ma, Bin Hou, Ling Yang, Teng Huo, Zeyan Si, Yue Hao:
Novel Selective Area Recessed Regrowth-free Ohmic Contacts to High Al-content Barrier. ICTA 2021: 78-79 - 2020
- [j19]Kai Su, Zeyang Ren, Yue Peng, Jinfeng Zhang, Jincheng Zhang, Yachao Zhang, Qi He, Chunfu Zhang, Yue Hao:
Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor With Ferroelectric HfZrOx/Al2O3 Gate Dielectrics. IEEE Access 8: 20043-20050 (2020) - [j18]Qing Zhu, Xiaohua Ma, Bin Hou, Mei Wu, Jiejie Zhu, Ling Yang, Meng Zhang, Yue Hao:
Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature. IEEE Access 8: 35520-35528 (2020) - [j17]Zeyang Ren, Qi He, Jiamin Xu, Guansheng Yuan, Jinfeng Zhang, Jincheng Zhang, Kai Su, Yue Hao:
Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al2O3 Gate Dielectric. IEEE Access 8: 50465-50471 (2020) - [j16]Shuang Liu, Xiufeng Song, Jincheng Zhang, Sheng-Lei Zhao, Jun Luo, Hong Zhang, Yachao Zhang, Weihang Zhang, Hong Zhou, Zhihong Liu, Yue Hao:
Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs. IEEE Access 8: 57126-57135 (2020) - [j15]Xingxing Guo, Shuiying Xiang, Yahui Zhang, Aijun Wen, Yue Hao:
Enhanced memory capacity of a neuromorphic reservoir computing system based on a VCSEL with double optical feedbacks. Sci. China Inf. Sci. 63(6) (2020) - [j14]Shuiying Xiang, Yanan Han, Xingxing Guo, Aijun Wen, Genquan Han, Yue Hao:
Real-time optical spike-timing dependent plasticity in a single VCSEL with dual-polarized pulsed optical injection. Sci. China Inf. Sci. 63(6) (2020) - [j13]Kui Dang, Jincheng Zhang, Hong Zhou, Shan Yin, Tao Zhang, Jing Ning, Yachao Zhang, Zhaoke Bian, Jiabo Chen, Xiaoling Duan, Sheng-Lei Zhao, Yue Hao:
Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration. IEEE Trans. Ind. Electron. 67(8): 6597-6606 (2020) - [c6]Yingzhe Wang, Xuefeng Zheng, Jiaduo Zhu, Shengrui Xu, Xiaohua Ma, Jincheng Zhang, Yue Hao, Linlin Xu, Jiangnan Dai, Peixian Li:
Evolution of Defect in AlGaN-based Deep Ultraviolet Light Emitting Diodes During Electrical Stress. IRPS 2020: 1-4 - [c5]Shuiying Xiang, Zhenxing Ren, Yahui Zhang, Xingxing Guo, Ziwei Song, Aijun Wen, Yue Hao:
Hardware Architecture and Algorithm Co-Design for Multi-Layer Photonic Neuromorphic Network with Excitable VCSELs-SA. OFC 2020: 1-3
2010 – 2019
- 2018
- [c4]Jiejie Zhu, Bin Hou, Lixiang Chen, Qing Zhu, Ling Yang, Xiaowei Zhou, Peng Zhang, Xiaohua Ma, Yue Hao:
Threshold voltage shift and interface/border trapping mechanism in Al2O3/AlGaN/GaN MOS-HEMTs. IRPS 2018: 1 - 2016
- [j12]Bochao Zhao, Peijun Ma, Yang Lu, Jiaxin Zheng, Hengshuang Zhang, Zuo-Chen Shi, Xiaohua Ma, Yue Hao:
A novel graphical method for dual-frequency two sections transformer. IEICE Electron. Express 13(12): 20160509 (2016) - 2015
- [j11]Bochao Zhao, Xiaohua Ma, Yang Lu, Jiaxin Zheng, Wenzhe Han, Honghe Zhang, Yanlong Zhang, Yue Hao:
A 5-8 GHz wideband 100 W internally matched GaN power amplifier. IEICE Electron. Express 12(6): 20150172 (2015) - [j10]Xiangdong Li, Weihang Zhang, Mengdi Fu, Jincheng Zhang, Haiqing Jiang, Zhenxing Guo, Yu Zou, Renyuan Jiang, Zuo-Chen Shi, Yue Hao:
AlGaN channel MIS-HEMTs with a very high breakdown electric field and excellent high-temperature performance. IEICE Electron. Express 12(20): 20150694 (2015) - [j9]Minhan Mi, Yunlong He, Bin Hou, Meng Zhang, Zuo-Chen Shi, Xiaohua Ma, Peixian Li, Yue Hao:
The characteristics of fluorinated gate dielectric AlGaN/GaN MIS-HEMT. IEICE Electron. Express 12(24): 20150943 (2015) - [j8]Zhixiong Di, Yue Hao, Jiangyi Shi, Peijun Ma:
A High-Throughput VLSI Architecture Design of Arithmetic Encoder in JPEG2000. J. Signal Process. Syst. 81(2): 227-247 (2015) - 2014
- [j7]Peng Zhang, Yuan Wang, Xing Zhang, Xiaohua Ma, Yue Hao:
Novel silicon-controlled rectifier (SCR) for digital and high-voltage ESD power supply clamp. Sci. China Inf. Sci. 57(2): 1-6 (2014) - [j6]Wei-Wei Chen, Xiaohua Ma, Bin Hou, Sheng-Lei Zhao, Jiejie Zhu, Jincheng Zhang, Yue Hao:
Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress. Microelectron. Reliab. 54(6-7): 1293-1298 (2014) - 2013
- [j5]Haoran Chen, Lin-An Yang, Xiaoxian Liu, Zhangming Zhu, Jun Luo, Yue Hao:
The impact of trapping centers on AlGaN/GaN resonant tunneling diode. IEICE Electron. Express 10(19): 20130588 (2013) - [j4]Haoran Chen, Lin-An Yang, Xiaoxian Liu, Zhangming Zhu, Jun Luo, Yue Hao:
Erratum: The impact of trapping centers on AlGaN/GaN resonant tunneling diode [IEICE Electronics Express Vol 10 (2013) No 19 pp 20130588]. IEICE Electron. Express 10(24): 20138002 (2013) - 2010
- [j3]Jincheng Zhang, Zhiming Li, Yue Hao, Hao Wang, Peixian Li:
Finite element analysis and optimization of temperature field in GaN-MOCVD reactor. Sci. China Inf. Sci. 53(10): 2138-2143 (2010)
2000 – 2009
- 2008
- [j2]Jinfeng Zhang, Yue Hao, Jincheng Zhang, JinYu Ni:
The mobility of two-dimensional electron gas in AlGaN/GaN heterostructures with varied Al content. Sci. China Ser. F Inf. Sci. 51(6): 780-789 (2008) - 2005
- [j1]Ming-e Jing, Yue Hao, Jinfeng Zhang, Peijun Ma:
Efficient parametric yield optimization of VLSI circuit by uniform design sampling method. Microelectron. Reliab. 45(1): 155-162 (2005) - [c3]Junping Wang, Yue Hao:
Short Critical Area Computational Method Using Mathematical Morphology. CIS (2) 2005: 796-803 - 2003
- [c2]Tianxu Zhao, Xuchao Duan, Yue Hao, Peijun Ma:
Reliability Estimation Model of ICs Interconnect Based on Uniform Distribution of Defects on a Chip. DFT 2003: 11-17 - 2001
- [c1]Tianxu Zhao, Yue Hao, Peijun Ma, Taifeng Chen:
Relation between Reliability and Yield of IC's Based on Discrete Defect Distribution Model. DFT 2001: 48-
Coauthor Index
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