{"id":"https:\/\/openalex.org\/W2945091228","doi":"https:\/\/doi.org\/10.1109\/irps.2019.8720554","title":"Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT","display_name":"Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT","publication_year":2019,"publication_date":"2019-03-01","ids":{"openalex":"https:\/\/openalex.org\/W2945091228","doi":"https:\/\/doi.org\/10.1109\/irps.2019.8720554","mag":"2945091228"},"language":"en","primary_location":{"id":"doi:10.1109\/irps.2019.8720554","is_oa":false,"landing_page_url":"https:\/\/doi.org\/10.1109\/irps.2019.8720554","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https:\/\/openalex.org\/A5000836649","display_name":"A. G. Viey","orcid":"https:\/\/orcid.org\/0000-0002-4063-1814"},"institutions":[{"id":"https:\/\/openalex.org\/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https:\/\/ror.org\/00jjx8s55","country_code":"FR","type":"government","lineage":["https:\/\/openalex.org\/I2738703131"]},{"id":"https:\/\/openalex.org\/I4210150049","display_name":"Laboratoire d'\u00c9lectronique des Technologies de l'Information","ror":"https:\/\/ror.org\/04mf0wv34","country_code":"FR","type":"government","lineage":["https:\/\/openalex.org\/I2738703131","https:\/\/openalex.org\/I2738703131","https:\/\/openalex.org\/I4210117989","https:\/\/openalex.org\/I4210150049"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"A.G. Viey","raw_affiliation_strings":["CEA-Leti, Grenoble, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CEA-Leti, Grenoble, France","institution_ids":["https:\/\/openalex.org\/I2738703131","https:\/\/openalex.org\/I4210150049"]}]},{"author_position":"middle","author":{"id":"https:\/\/openalex.org\/A5075656637","display_name":"W. Vandendaele","orcid":null},"institutions":[{"id":"https:\/\/openalex.org\/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https:\/\/ror.org\/00jjx8s55","country_code":"FR","type":"government","lineage":["https:\/\/openalex.org\/I2738703131"]},{"id":"https:\/\/openalex.org\/I4210150049","display_name":"Laboratoire d'\u00c9lectronique des Technologies de l'Information","ror":"https:\/\/ror.org\/04mf0wv34","country_code":"FR","type":"government","lineage":["https:\/\/openalex.org\/I2738703131","https:\/\/openalex.org\/I2738703131","https:\/\/openalex.org\/I4210117989","https:\/\/openalex.org\/I4210150049"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"W. Vandendaele","raw_affiliation_strings":["CEA-Leti, Grenoble, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CEA-Leti, Grenoble, France","institution_ids":["https:\/\/openalex.org\/I2738703131","https:\/\/openalex.org\/I4210150049"]}]},{"author_position":"middle","author":{"id":"https:\/\/openalex.org\/A5108452210","display_name":"M.-A. Jaud","orcid":"https:\/\/orcid.org\/0000-0003-0772-7352"},"institutions":[{"id":"https:\/\/openalex.org\/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https:\/\/ror.org\/00jjx8s55","country_code":"FR","type":"government","lineage":["https:\/\/openalex.org\/I2738703131"]},{"id":"https:\/\/openalex.org\/I4210150049","display_name":"Laboratoire d'\u00c9lectronique des Technologies de l'Information","ror":"https:\/\/ror.org\/04mf0wv34","country_code":"FR","type":"government","lineage":["https:\/\/openalex.org\/I2738703131","https:\/\/openalex.org\/I2738703131","https:\/\/openalex.org\/I4210117989","https:\/\/openalex.org\/I4210150049"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"MA Jaud","raw_affiliation_strings":["CEA-Leti, Grenoble, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CEA-Leti, Grenoble, France","institution_ids":["https:\/\/openalex.org\/I2738703131","https:\/\/openalex.org\/I4210150049"]}]},{"author_position":"middle","author":{"id":"https:\/\/openalex.org\/A5047871626","display_name":"R. Gwoziecki","orcid":null},"institutions":[{"id":"https:\/\/openalex.org\/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https:\/\/ror.org\/00jjx8s55","country_code":"FR","type":"government","lineage":["https:\/\/openalex.org\/I2738703131"]},{"id":"https:\/\/openalex.org\/I4210150049","display_name":"Laboratoire d'\u00c9lectronique des Technologies de l'Information","ror":"https:\/\/ror.org\/04mf0wv34","country_code":"FR","type":"government","lineage":["https:\/\/openalex.org\/I2738703131","https:\/\/openalex.org\/I2738703131","https:\/\/openalex.org\/I4210117989","https:\/\/openalex.org\/I4210150049"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"R. Gwoziecki","raw_affiliation_strings":["CEA-Leti, Grenoble, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CEA-Leti, Grenoble, France","institution_ids":["https:\/\/openalex.org\/I2738703131","https:\/\/openalex.org\/I4210150049"]}]},{"author_position":"middle","author":{"id":"https:\/\/openalex.org\/A5020906871","display_name":"A. Torres","orcid":"https:\/\/orcid.org\/0009-0008-9497-7395"},"institutions":[{"id":"https:\/\/openalex.org\/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https:\/\/ror.org\/00jjx8s55","country_code":"FR","type":"government","lineage":["https:\/\/openalex.org\/I2738703131"]},{"id":"https:\/\/openalex.org\/I4210150049","display_name":"Laboratoire d'\u00c9lectronique des Technologies de l'Information","ror":"https:\/\/ror.org\/04mf0wv34","country_code":"FR","type":"government","lineage":["https:\/\/openalex.org\/I2738703131","https:\/\/openalex.org\/I2738703131","https:\/\/openalex.org\/I4210117989","https:\/\/openalex.org\/I4210150049"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"A. Torres","raw_affiliation_strings":["CEA-Leti, Grenoble, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CEA-Leti, Grenoble, France","institution_ids":["https:\/\/openalex.org\/I2738703131","https:\/\/openalex.org\/I4210150049"]}]},{"author_position":"middle","author":{"id":"https:\/\/openalex.org\/A5058507704","display_name":"M. Plissonnier","orcid":null},"institutions":[{"id":"https:\/\/openalex.org\/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https:\/\/ror.org\/00jjx8s55","country_code":"FR","type":"government","lineage":["https:\/\/openalex.org\/I2738703131"]},{"id":"https:\/\/openalex.org\/I4210150049","display_name":"Laboratoire d'\u00c9lectronique des Technologies de l'Information","ror":"https:\/\/ror.org\/04mf0wv34","country_code":"FR","type":"government","lineage":["https:\/\/openalex.org\/I2738703131","https:\/\/openalex.org\/I2738703131","https:\/\/openalex.org\/I4210117989","https:\/\/openalex.org\/I4210150049"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"M. Plissonnier","raw_affiliation_strings":["CEA-Leti, Grenoble, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CEA-Leti, Grenoble, France","institution_ids":["https:\/\/openalex.org\/I2738703131","https:\/\/openalex.org\/I4210150049"]}]},{"author_position":"middle","author":{"id":"https:\/\/openalex.org\/A5074811744","display_name":"F. Gaillard","orcid":null},"institutions":[{"id":"https:\/\/openalex.org\/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https:\/\/ror.org\/00jjx8s55","country_code":"FR","type":"government","lineage":["https:\/\/openalex.org\/I2738703131"]},{"id":"https:\/\/openalex.org\/I4210150049","display_name":"Laboratoire d'\u00c9lectronique des Technologies de l'Information","ror":"https:\/\/ror.org\/04mf0wv34","country_code":"FR","type":"government","lineage":["https:\/\/openalex.org\/I2738703131","https:\/\/openalex.org\/I2738703131","https:\/\/openalex.org\/I4210117989","https:\/\/openalex.org\/I4210150049"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"F. Gaillard","raw_affiliation_strings":["CEA-Leti, Grenoble, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CEA-Leti, Grenoble, France","institution_ids":["https:\/\/openalex.org\/I2738703131","https:\/\/openalex.org\/I4210150049"]}]},{"author_position":"middle","author":{"id":"https:\/\/openalex.org\/A5062992025","display_name":"G. Ghibaudo","orcid":null},"institutions":[{"id":"https:\/\/openalex.org\/I106785703","display_name":"Institut polytechnique de Grenoble","ror":"https:\/\/ror.org\/05sbt2524","country_code":"FR","type":"education","lineage":["https:\/\/openalex.org\/I106785703","https:\/\/openalex.org\/I899635006"]},{"id":"https:\/\/openalex.org\/I4210139715","display_name":"Institut de Micro\u00e9lectronique, Electromagn\u00e9tisme et Photonique","ror":"https:\/\/ror.org\/03taa9n66","country_code":"FR","type":"facility","lineage":["https:\/\/openalex.org\/I106785703","https:\/\/openalex.org\/I1294671590","https:\/\/openalex.org\/I4210095849","https:\/\/openalex.org\/I4210139715","https:\/\/openalex.org\/I70900168","https:\/\/openalex.org\/I899635006"]},{"id":"https:\/\/openalex.org\/I4400573202","display_name":"Centre de Radiofr\u00e9quences, Optique et Micro-nano\u00e9lectronique des Alpes","ror":"https:\/\/ror.org\/050rs7291","country_code":"FR","type":"facility","lineage":["https:\/\/openalex.org\/I106785703","https:\/\/openalex.org\/I1294671590","https:\/\/openalex.org\/I4400573202","https:\/\/openalex.org\/I70900168","https:\/\/openalex.org\/I899635006","https:\/\/openalex.org\/I899635006"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"G. Ghibaudo","raw_affiliation_strings":["IMEP-LAHC MINATEC, Grenoble, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMEP-LAHC MINATEC, Grenoble, France","institution_ids":["https:\/\/openalex.org\/I106785703","https:\/\/openalex.org\/I4210139715","https:\/\/openalex.org\/I4400573202"]}]},{"author_position":"middle","author":{"id":"https:\/\/openalex.org\/A5070140690","display_name":"R. Modica","orcid":"https:\/\/orcid.org\/0000-0003-2199-6460"},"institutions":[{"id":"https:\/\/openalex.org\/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https:\/\/ror.org\/053bqv655","country_code":"IT","type":"company","lineage":["https:\/\/openalex.org\/I131827901","https:\/\/openalex.org\/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"R. Modica","raw_affiliation_strings":["STMicroelectronics, Catania, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Catania, Italy","institution_ids":["https:\/\/openalex.org\/I4210154781"]}]},{"author_position":"middle","author":{"id":"https:\/\/openalex.org\/A5023257879","display_name":"F. Iucolano","orcid":"https:\/\/orcid.org\/0000-0001-7269-7052"},"institutions":[{"id":"https:\/\/openalex.org\/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https:\/\/ror.org\/053bqv655","country_code":"IT","type":"company","lineage":["https:\/\/openalex.org\/I131827901","https:\/\/openalex.org\/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"F. Iucolano","raw_affiliation_strings":["STMicroelectronics, Catania, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Catania, Italy","institution_ids":["https:\/\/openalex.org\/I4210154781"]}]},{"author_position":"middle","author":{"id":"https:\/\/openalex.org\/A5059611177","display_name":"Matteo Meneghini","orcid":"https:\/\/orcid.org\/0000-0003-2421-505X"},"institutions":[{"id":"https:\/\/openalex.org\/I138689650","display_name":"University of Padua","ror":"https:\/\/ror.org\/00240q980","country_code":"IT","type":"education","lineage":["https:\/\/openalex.org\/I138689650"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"M. Meneghini","raw_affiliation_strings":["Department of Information Engineering, University of Padova, Padova, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Information Engineering, University of Padova, Padova, Italy","institution_ids":["https:\/\/openalex.org\/I138689650"]}]},{"author_position":"last","author":{"id":"https:\/\/openalex.org\/A5101587480","display_name":"Gaudenzio Meneghesso","orcid":"https:\/\/orcid.org\/0000-0002-6715-4827"},"institutions":[{"id":"https:\/\/openalex.org\/I138689650","display_name":"University of Padua","ror":"https:\/\/ror.org\/00240q980","country_code":"IT","type":"education","lineage":["https:\/\/openalex.org\/I138689650"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"G. Meneghesso","raw_affiliation_strings":["Department of Information Engineering, University of Padova, Padova, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Information Engineering, University of Padova, Padova, Italy","institution_ids":["https:\/\/openalex.org\/I138689650"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":7,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.7553,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.88372093,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":96,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https:\/\/openalex.org\/T10099","display_name":"GaN-based semiconductor devices and materials","score":1,"subfield":{"id":"https:\/\/openalex.org\/subfields\/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https:\/\/openalex.org\/fields\/31","display_name":"Physics and Astronomy"},"domain":{"id":"https:\/\/openalex.org\/domains\/3","display_name":"Physical Sciences"}},"topics":[{"id":"https:\/\/openalex.org\/T10099","display_name":"GaN-based semiconductor devices and materials","score":1,"subfield":{"id":"https:\/\/openalex.org\/subfields\/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https:\/\/openalex.org\/fields\/31","display_name":"Physics and Astronomy"},"domain":{"id":"https:\/\/openalex.org\/domains\/3","display_name":"Physical Sciences"}},{"id":"https:\/\/openalex.org\/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https:\/\/openalex.org\/subfields\/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https:\/\/openalex.org\/fields\/22","display_name":"Engineering"},"domain":{"id":"https:\/\/openalex.org\/domains\/3","display_name":"Physical Sciences"}},{"id":"https:\/\/openalex.org\/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998000264167786,"subfield":{"id":"https:\/\/openalex.org\/subfields\/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https:\/\/openalex.org\/fields\/22","display_name":"Engineering"},"domain":{"id":"https:\/\/openalex.org\/domains\/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https:\/\/openalex.org\/keywords\/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.7297199368476868},{"id":"https:\/\/openalex.org\/keywords\/degradation","display_name":"Degradation (telecommunications)","score":0.7056261897087097},{"id":"https:\/\/openalex.org\/keywords\/materials-science","display_name":"Materials science","score":0.6387804746627808},{"id":"https:\/\/openalex.org\/keywords\/threshold-voltage","display_name":"Threshold voltage","score":0.6106670498847961},{"id":"https:\/\/openalex.org\/keywords\/optoelectronics","display_name":"Optoelectronics","score":0.5763689875602722},{"id":"https:\/\/openalex.org\/keywords\/transient","display_name":"Transient (computer programming)","score":0.5200521349906921},{"id":"https:\/\/openalex.org\/keywords\/logic-gate","display_name":"Logic gate","score":0.5137961506843567},{"id":"https:\/\/openalex.org\/keywords\/gallium-nitride","display_name":"Gallium nitride","score":0.4691886901855469},{"id":"https:\/\/openalex.org\/keywords\/silicon","display_name":"Silicon","score":0.4373517632484436},{"id":"https:\/\/openalex.org\/keywords\/mode","display_name":"Mode (computer interface)","score":0.4313575029373169},{"id":"https:\/\/openalex.org\/keywords\/electrical-engineering","display_name":"Electrical engineering","score":0.39054667949676514},{"id":"https:\/\/openalex.org\/keywords\/electronic-engineering","display_name":"Electronic engineering","score":0.3881651759147644},{"id":"https:\/\/openalex.org\/keywords\/voltage","display_name":"Voltage","score":0.33127227425575256},{"id":"https:\/\/openalex.org\/keywords\/computer-science","display_name":"Computer science","score":0.28542450070381165},{"id":"https:\/\/openalex.org\/keywords\/transistor","display_name":"Transistor","score":0.2270508110523224},{"id":"https:\/\/openalex.org\/keywords\/nanotechnology","display_name":"Nanotechnology","score":0.19592514634132385},{"id":"https:\/\/openalex.org\/keywords\/engineering","display_name":"Engineering","score":0.18950998783111572},{"id":"https:\/\/openalex.org\/keywords\/layer","display_name":"Layer (electronics)","score":0.07691460847854614}],"concepts":[{"id":"https:\/\/openalex.org\/C162057924","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.7297199368476868},{"id":"https:\/\/openalex.org\/C2779679103","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.7056261897087097},{"id":"https:\/\/openalex.org\/C192562407","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q228736","display_name":"Materials science","level":0,"score":0.6387804746627808},{"id":"https:\/\/openalex.org\/C195370968","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q1754002","display_name":"Threshold voltage","level":4,"score":0.6106670498847961},{"id":"https:\/\/openalex.org\/C49040817","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q193091","display_name":"Optoelectronics","level":1,"score":0.5763689875602722},{"id":"https:\/\/openalex.org\/C2780799671","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q17087362","display_name":"Transient (computer programming)","level":2,"score":0.5200521349906921},{"id":"https:\/\/openalex.org\/C131017901","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q170451","display_name":"Logic gate","level":2,"score":0.5137961506843567},{"id":"https:\/\/openalex.org\/C2778871202","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q411713","display_name":"Gallium nitride","level":3,"score":0.4691886901855469},{"id":"https:\/\/openalex.org\/C544956773","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q670","display_name":"Silicon","level":2,"score":0.4373517632484436},{"id":"https:\/\/openalex.org\/C48677424","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q6888088","display_name":"Mode (computer interface)","level":2,"score":0.4313575029373169},{"id":"https:\/\/openalex.org\/C119599485","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q43035","display_name":"Electrical engineering","level":1,"score":0.39054667949676514},{"id":"https:\/\/openalex.org\/C24326235","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q126095","display_name":"Electronic engineering","level":1,"score":0.3881651759147644},{"id":"https:\/\/openalex.org\/C165801399","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q25428","display_name":"Voltage","level":2,"score":0.33127227425575256},{"id":"https:\/\/openalex.org\/C41008148","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q21198","display_name":"Computer science","level":0,"score":0.28542450070381165},{"id":"https:\/\/openalex.org\/C172385210","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q5339","display_name":"Transistor","level":3,"score":0.2270508110523224},{"id":"https:\/\/openalex.org\/C171250308","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q11468","display_name":"Nanotechnology","level":1,"score":0.19592514634132385},{"id":"https:\/\/openalex.org\/C127413603","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q11023","display_name":"Engineering","level":0,"score":0.18950998783111572},{"id":"https:\/\/openalex.org\/C2779227376","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.07691460847854614},{"id":"https:\/\/openalex.org\/C111919701","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q9135","display_name":"Operating system","level":1,"score":0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1109\/irps.2019.8720554","is_oa":false,"landing_page_url":"https:\/\/doi.org\/10.1109\/irps.2019.8720554","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},{"id":"pmh:oai:HAL:cea-04797646v1","is_oa":false,"landing_page_url":"https:\/\/cea.hal.science\/cea-04797646","pdf_url":null,"source":{"id":"https:\/\/openalex.org\/S4306402512","display_name":"HAL (Le Centre pour la Communication Scientifique Directe)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https:\/\/openalex.org\/I1294671590","host_organization_name":"Centre National de la Recherche Scientifique","host_organization_lineage":["https:\/\/openalex.org\/I1294671590"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS), Mar 2019, Monterey, United States. pp.1-6, ⟨10.1109\/IRPS.2019.8720554⟩","raw_type":"info:eu-repo\/semantics\/conferenceObject"},{"id":"pmh:oai:www.research.unipd.it:11577\/3305182","is_oa":false,"landing_page_url":"http:\/\/hdl.handle.net\/11577\/3305182","pdf_url":null,"source":{"id":"https:\/\/openalex.org\/S4306402547","display_name":"Padua Research Archive (University of Padova)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https:\/\/openalex.org\/I138689650","host_organization_name":"University of Padua","host_organization_lineage":["https:\/\/openalex.org\/I138689650"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"info:eu-repo\/semantics\/conferenceObject"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Clean water and sanitation","score":0.4099999964237213,"id":"https:\/\/metadata.un.org\/sdg\/6"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https:\/\/openalex.org\/W1864244490","https:\/\/openalex.org\/W2013305463","https:\/\/openalex.org\/W2025307127","https:\/\/openalex.org\/W2041714088","https:\/\/openalex.org\/W2047708973","https:\/\/openalex.org\/W2292409369","https:\/\/openalex.org\/W2525729296","https:\/\/openalex.org\/W2611328757","https:\/\/openalex.org\/W2620722801","https:\/\/openalex.org\/W2623811665","https:\/\/openalex.org\/W2772412456","https:\/\/openalex.org\/W2791841474","https:\/\/openalex.org\/W2799343418","https:\/\/openalex.org\/W2809865532","https:\/\/openalex.org\/W2810530039"],"related_works":["https:\/\/openalex.org\/W2472160638","https:\/\/openalex.org\/W3209950509","https:\/\/openalex.org\/W2559825181","https:\/\/openalex.org\/W4377089489","https:\/\/openalex.org\/W4388207625","https:\/\/openalex.org\/W1975307200","https:\/\/openalex.org\/W3088454288","https:\/\/openalex.org\/W2466508933","https:\/\/openalex.org\/W4313611767","https:\/\/openalex.org\/W4385217635"],"abstract_inverted_index":{"In":[0],"this":[1,84],"paper,":[2],"we":[3],"explore":[4],"the":[5,8,23,47,57,61,64,73],"influence":[6],"of":[7,25,63],"fully":[9],"recessed":[10],"gate":[11,41,58,76],"length":[12,42,59],"on":[13,29],"threshold":[14],"voltage":[15],"instabilities.":[16],"The":[17],"study":[18],"has":[19],"been":[20],"performed":[21],"by":[22],"use":[24],"ultra-fast":[26],"pBTI":[27,48],"measurements":[28],"GaN-on-Si":[30],"E-mode":[31],"MOSc-HEMTs,":[32],"as":[33,35],"well":[34],"TCAD":[36,69],"simulations.":[37],"It":[38],"reveals":[39],"that":[40,72],"reduction":[43],"tends":[44],"to":[45],"decrease":[46],"degradation.":[49,87],"Transient":[50],"analyses":[51],"(degradation\/relexation)":[52],"reveal":[53],"same":[54],"dynamics":[55],"whatever":[56],"while":[60],"value":[62],"initial":[65],"VTHdirectly":[66],"influences":[67],"BTI.":[68],"simulations":[70],"highlight":[71],"full":[74],"recess":[75],"configuration":[77],"creates":[78],"a":[79],"short-channel":[80],"effect":[81],"responsible":[82],"for":[83],"peculiar":[85],"Vth":[86]},"counts_by_year":[{"year":2021,"cited_by_count":4}],"updated_date":"2026-09-03T10:48:47.769340","created_date":"2019-05-29T00:00:00"}