{"id":"https:\/\/openalex.org\/W2089806784","doi":"https:\/\/doi.org\/10.1109\/apccas.2010.5775005","title":"A high performance vertical Si nanowire CMOS for ultra high density circuits","display_name":"A high performance vertical Si nanowire CMOS for ultra high density circuits","publication_year":2010,"publication_date":"2010-12-01","ids":{"openalex":"https:\/\/openalex.org\/W2089806784","doi":"https:\/\/doi.org\/10.1109\/apccas.2010.5775005","mag":"2089806784"},"language":"en","primary_location":{"id":"doi:10.1109\/apccas.2010.5775005","is_oa":false,"landing_page_url":"https:\/\/doi.org\/10.1109\/apccas.2010.5775005","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2010 IEEE Asia Pacific Conference on Circuits and Systems","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https:\/\/openalex.org\/A5079475933","display_name":"Satish Maheshwaram","orcid":"https:\/\/orcid.org\/0000-0002-1760-1545"},"institutions":[{"id":"https:\/\/openalex.org\/I154851008","display_name":"Indian Institute of Technology Roorkee","ror":"https:\/\/ror.org\/00582g326","country_code":"IN","type":"education","lineage":["https:\/\/openalex.org\/I154851008"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Satish Maheshwaram","raw_affiliation_strings":["Dept. of Electronics and Computer Engineering, Indian Institute of Technology, Roorkee, India","Dept. of Electronics and Computer Engineering, Indian Institute of Technology Roorkee, India-247667"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electronics and Computer Engineering, Indian Institute of Technology, Roorkee, India","institution_ids":["https:\/\/openalex.org\/I154851008"]},{"raw_affiliation_string":"Dept. of Electronics and Computer Engineering, Indian Institute of Technology Roorkee, India-247667","institution_ids":["https:\/\/openalex.org\/I154851008"]}]},{"author_position":"middle","author":{"id":"https:\/\/openalex.org\/A5041305093","display_name":"Gaurav Kaushal","orcid":"https:\/\/orcid.org\/0000-0002-7278-1104"},"institutions":[{"id":"https:\/\/openalex.org\/I154851008","display_name":"Indian Institute of Technology Roorkee","ror":"https:\/\/ror.org\/00582g326","country_code":"IN","type":"education","lineage":["https:\/\/openalex.org\/I154851008"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Gaurav Kaushal","raw_affiliation_strings":["Dept. of Electronics and Computer Engineering, Indian Institute of Technology, Roorkee, India","Dept. of Electronics and Computer Engineering, Indian Institute of Technology Roorkee, India-247667"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electronics and Computer Engineering, Indian Institute of Technology, Roorkee, India","institution_ids":["https:\/\/openalex.org\/I154851008"]},{"raw_affiliation_string":"Dept. of Electronics and Computer Engineering, Indian Institute of Technology Roorkee, India-247667","institution_ids":["https:\/\/openalex.org\/I154851008"]}]},{"author_position":"last","author":{"id":"https:\/\/openalex.org\/A5059645325","display_name":"S. K. Manhas","orcid":"https:\/\/orcid.org\/0000-0003-3360-9683"},"institutions":[{"id":"https:\/\/openalex.org\/I154851008","display_name":"Indian Institute of Technology Roorkee","ror":"https:\/\/ror.org\/00582g326","country_code":"IN","type":"education","lineage":["https:\/\/openalex.org\/I154851008"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"S K Manhas","raw_affiliation_strings":["Dept. of Electronics and Computer Engineering, Indian Institute of Technology, Roorkee, India","Dept. of Electronics and Computer Engineering, Indian Institute of Technology Roorkee, India-247667"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electronics and Computer Engineering, Indian Institute of Technology, Roorkee, India","institution_ids":["https:\/\/openalex.org\/I154851008"]},{"raw_affiliation_string":"Dept. of Electronics and Computer Engineering, Indian Institute of Technology Roorkee, India-247667","institution_ids":["https:\/\/openalex.org\/I154851008"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https:\/\/openalex.org\/I154851008"],"apc_list":null,"apc_paid":null,"fwci":0.4451,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.60141853,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"1219","last_page":"1222"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https:\/\/openalex.org\/T10472","display_name":"Semiconductor materials and devices","score":1,"subfield":{"id":"https:\/\/openalex.org\/subfields\/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https:\/\/openalex.org\/fields\/22","display_name":"Engineering"},"domain":{"id":"https:\/\/openalex.org\/domains\/3","display_name":"Physical Sciences"}},"topics":[{"id":"https:\/\/openalex.org\/T10472","display_name":"Semiconductor materials and devices","score":1,"subfield":{"id":"https:\/\/openalex.org\/subfields\/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https:\/\/openalex.org\/fields\/22","display_name":"Engineering"},"domain":{"id":"https:\/\/openalex.org\/domains\/3","display_name":"Physical Sciences"}},{"id":"https:\/\/openalex.org\/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1,"subfield":{"id":"https:\/\/openalex.org\/subfields\/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https:\/\/openalex.org\/fields\/22","display_name":"Engineering"},"domain":{"id":"https:\/\/openalex.org\/domains\/3","display_name":"Physical Sciences"}},{"id":"https:\/\/openalex.org\/T11272","display_name":"Nanowire Synthesis and Applications","score":0.9998999834060669,"subfield":{"id":"https:\/\/openalex.org\/subfields\/2204","display_name":"Biomedical Engineering"},"field":{"id":"https:\/\/openalex.org\/fields\/22","display_name":"Engineering"},"domain":{"id":"https:\/\/openalex.org\/domains\/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https:\/\/openalex.org\/keywords\/cmos","display_name":"CMOS","score":0.8962277173995972},{"id":"https:\/\/openalex.org\/keywords\/nanowire","display_name":"Nanowire","score":0.864199161529541},{"id":"https:\/\/openalex.org\/keywords\/materials-science","display_name":"Materials science","score":0.6497635245323181},{"id":"https:\/\/openalex.org\/keywords\/inverter","display_name":"Inverter","score":0.6130709648132324},{"id":"https:\/\/openalex.org\/keywords\/mosfet","display_name":"MOSFET","score":0.528178334236145},{"id":"https:\/\/openalex.org\/keywords\/optoelectronics","display_name":"Optoelectronics","score":0.5064033269882202},{"id":"https:\/\/openalex.org\/keywords\/logic-gate","display_name":"Logic gate","score":0.4911799132823944},{"id":"https:\/\/openalex.org\/keywords\/electronic-circuit","display_name":"Electronic circuit","score":0.4889591932296753},{"id":"https:\/\/openalex.org\/keywords\/electronic-engineering","display_name":"Electronic engineering","score":0.44800880551338196},{"id":"https:\/\/openalex.org\/keywords\/electrical-engineering","display_name":"Electrical engineering","score":0.36869513988494873},{"id":"https:\/\/openalex.org\/keywords\/transistor","display_name":"Transistor","score":0.23498013615608215},{"id":"https:\/\/openalex.org\/keywords\/engineering","display_name":"Engineering","score":0.1902599036693573},{"id":"https:\/\/openalex.org\/keywords\/voltage","display_name":"Voltage","score":0.11621102690696716}],"concepts":[{"id":"https:\/\/openalex.org\/C46362747","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q173431","display_name":"CMOS","level":2,"score":0.8962277173995972},{"id":"https:\/\/openalex.org\/C74214498","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q631739","display_name":"Nanowire","level":2,"score":0.864199161529541},{"id":"https:\/\/openalex.org\/C192562407","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q228736","display_name":"Materials science","level":0,"score":0.6497635245323181},{"id":"https:\/\/openalex.org\/C11190779","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q664575","display_name":"Inverter","level":3,"score":0.6130709648132324},{"id":"https:\/\/openalex.org\/C2778413303","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q210793","display_name":"MOSFET","level":4,"score":0.528178334236145},{"id":"https:\/\/openalex.org\/C49040817","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q193091","display_name":"Optoelectronics","level":1,"score":0.5064033269882202},{"id":"https:\/\/openalex.org\/C131017901","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q170451","display_name":"Logic gate","level":2,"score":0.4911799132823944},{"id":"https:\/\/openalex.org\/C134146338","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q1815901","display_name":"Electronic circuit","level":2,"score":0.4889591932296753},{"id":"https:\/\/openalex.org\/C24326235","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q126095","display_name":"Electronic engineering","level":1,"score":0.44800880551338196},{"id":"https:\/\/openalex.org\/C119599485","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q43035","display_name":"Electrical engineering","level":1,"score":0.36869513988494873},{"id":"https:\/\/openalex.org\/C172385210","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q5339","display_name":"Transistor","level":3,"score":0.23498013615608215},{"id":"https:\/\/openalex.org\/C127413603","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q11023","display_name":"Engineering","level":0,"score":0.1902599036693573},{"id":"https:\/\/openalex.org\/C165801399","wikidata":"https:\/\/www.wikidata.org\/wiki\/Q25428","display_name":"Voltage","level":2,"score":0.11621102690696716}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109\/apccas.2010.5775005","is_oa":false,"landing_page_url":"https:\/\/doi.org\/10.1109\/apccas.2010.5775005","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2010 IEEE Asia Pacific Conference on Circuits and Systems","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.5299999713897705,"id":"https:\/\/metadata.un.org\/sdg\/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https:\/\/openalex.org\/W2095596186","https:\/\/openalex.org\/W2119918420","https:\/\/openalex.org\/W2138044531","https:\/\/openalex.org\/W2147731882"],"related_works":["https:\/\/openalex.org\/W3143516596","https:\/\/openalex.org\/W2089372549","https:\/\/openalex.org\/W1669133231","https:\/\/openalex.org\/W4300780679","https:\/\/openalex.org\/W98453623","https:\/\/openalex.org\/W2340624421","https:\/\/openalex.org\/W2891188466","https:\/\/openalex.org\/W2170979950","https:\/\/openalex.org\/W2226796451","https:\/\/openalex.org\/W1900707063"],"abstract_inverted_index":{"In":[0],"this":[1],"work":[2],"we":[3],"investigate":[4],"novel":[5],"vertical":[6,26,37,54,92],"Silicon":[7],"nanowire":[8,22,25,52,93],"(NW)":[9],"based":[10,53,94],"CMOS":[11,27,55,95],"technology":[12,96],"for":[13,101,110],"logic":[14],"applications.":[15],"The":[16,88],"performance":[17,43,109],"and":[18,23,31,64,80,105],"behaviour":[19],"of":[20,68,76],"two":[21],"single":[24,84],"inverter":[28],"are":[29],"simulated":[30],"analysed.":[32],"It":[33],"is":[34],"seen":[35],"that":[36,51,91],"NW":[38],"MOSFET":[39],"has":[40,97],"a":[41],"significant":[42],"gain":[44],"over":[45],"corresponding":[46],"FinFET":[47],"technology.":[48],"We":[49],"show":[50,90],"offer":[56],"up":[57],"to":[58],"80%":[59],"reduction":[60,70],"in":[61,71],"layout":[62],"area,":[63],"nearly":[65],"one":[66],"order":[67],"magnitude":[69],"power":[72,103],"at":[73],"the":[74],"cost":[75],"15%":[77],"(two":[78],"wire)":[79,85],"40%":[81],"(single":[82],"diameter":[83],"increased":[86],"delay.":[87],"results":[89],"very":[98],"high":[99],"potential":[100],"ultra-low":[102],"applications":[104],"offers":[106],"excellent":[107],"overall":[108],"deca-nanoscale":[111],"CMOS.":[112]},"counts_by_year":[{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}