{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,27]],"date-time":"2024-09-27T04:13:42Z","timestamp":1727410422202},"reference-count":17,"publisher":"Springer Science and Business Media LLC","issue":"3","license":[{"start":{"date-parts":[[2001,6,1]],"date-time":"2001-06-01T00:00:00Z","timestamp":991353600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springer.com\/tdm"},{"start":{"date-parts":[[2001,6,1]],"date-time":"2001-06-01T00:00:00Z","timestamp":991353600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sci China Ser F"],"published-print":{"date-parts":[[2001,6]]},"DOI":"10.1007\/bf02714568","type":"journal-article","created":{"date-parts":[[2022,5,31]],"date-time":"2022-05-31T16:32:11Z","timestamp":1654014731000},"page":"176-183","source":"Crossref","is-referenced-by-count":0,"title":["New strategy of modeling inversion layer characteristics in MOS structure for ULSI applications"],"prefix":"10.1007","volume":"44","author":[{"given":"Yutao","family":"Ma","sequence":"first","affiliation":[]},{"given":"Zhijian","family":"Li","sequence":"additional","affiliation":[]},{"given":"Litian","family":"Liu","sequence":"additional","affiliation":[]}],"member":"297","reference":[{"issue":"4","key":"BF02714568_CR1","doi-asserted-by":"publisher","first-page":"486","DOI":"10.1109\/5.573737","volume":"85","author":"Y. Taur","year":"1997","unstructured":"Taur, Y., Buchanan, D. A., Chen, W. et al., CMOS scaling into the nanometer regime, Proceedings of the IEEE, 1997, 85(4): 486.","journal-title":"Proceedings of the IEEE"},{"key":"BF02714568_CR2","volume-title":"Physics of Semiconductor Devices","author":"S. M. Sze","year":"1981","unstructured":"Sze, S. M., Physics of Semiconductor Devices, 2nd Ed. New York: Wiley, 1981.","edition":"2nd Ed."},{"issue":"12","key":"BF02714568_CR3","doi-asserted-by":"publisher","first-page":"4891","DOI":"10.1103\/PhysRevB.5.4891","volume":"5","author":"F. Stern","year":"1972","unstructured":"Stern, F., Self-consistent results for N-type Si inversion layers, Phys. Rev. B, 1972, 5(12): 4891.","journal-title":"Phys. Rev. B"},{"issue":"10","key":"BF02714568_CR4","first-page":"5186","volume":"175","author":"J. Tomasz","year":"1994","unstructured":"Tomasz, J., Bogdan, M., Influence of carrier energy quantization on threshold voltage of metal-oxide-semiconductor transistor, J. Appl. Phys., 1994, 175(10): 5186.","journal-title":"J. Appl. Phys."},{"issue":"3","key":"BF02714568_CR5","doi-asserted-by":"publisher","first-page":"297","DOI":"10.1109\/16.557719","volume":"44","author":"S. Jallepalli","year":"1997","unstructured":"Jallepalli, S., Bude, J., Shih, W. K. et al., Electron and hole quantization and their impact on deep submicron siliconp-andn-MOSFET characteristics, IEEE Trans. Electron Devices, 1997, 44(3): 297.","journal-title":"IEEE Trans. Electron Devices"},{"issue":"10","key":"BF02714568_CR6","doi-asserted-by":"publisher","first-page":"2213","DOI":"10.1109\/16.725256","volume":"45","author":"B., K. Ip","year":"1998","unstructured":"Ip, B., K., Brews, J. R., Quantum effects upon drain current in a biased MOSFET, IEEE Trans. Electron Devices, 1998, 45(10): 2213.","journal-title":"IEEE Trans. Electron Devices"},{"issue":"4","key":"BF02714568_CR7","doi-asserted-by":"publisher","first-page":"932","DOI":"10.1109\/16.127485","volume":"39","author":"M. J. van Dort","year":"1992","unstructured":"van Dort M. J. et al., Influence of high substrate doping levels on the threshold voltage and the mobility of deep-submicrometer MOSFET\u2019s, IEEE Trans. Electron Devices, 1992, 39(4): 932.","journal-title":"IEEE Trans. Electron Devices"},{"issue":"5","key":"BF02714568_CR8","doi-asserted-by":"crossref","first-page":"206","DOI":"10.1109\/55.568765","volume":"18","author":"C. Chindalore","year":"1997","unstructured":"Chindalore, C., Hareland, S. A., Jallepalli, S. et al., Experimental determination of threshold voltage shits due to quantum mechanical effects in MOS electrons and holes inversion layer, IEEE. EDL., 1997, 18(5): 206.","journal-title":"IEEE. EDL."},{"issue":"6","key":"BF02714568_CR9","doi-asserted-by":"publisher","first-page":"1263","DOI":"10.1109\/16.678531","volume":"45","author":"J. Tomasz","year":"1998","unstructured":"Tomasz, J., Bogdan, M., Analysis of the MOS transistor based on the self-consistent solution to the Schr\u00f6dinger and Poisson equations and on the local mobility model, IEEE Trans. Electron Devices, 1998, 45(6): 1263.","journal-title":"IEEE Trans. Electron Devices"},{"issue":"7","key":"BF02714568_CR10","doi-asserted-by":"publisher","first-page":"1169","DOI":"10.1109\/16.595946","volume":"44","author":"A. Pacelli","year":"1997","unstructured":"Pacelli, A., Self-consistent solution of the Schr\u00f6dinger equation in semiconductor devices by implicit iteration, IEEE Trans. Electron Devices, 1997, 44(7): 1169.","journal-title":"IEEE Trans. Electron Devices"},{"key":"BF02714568_CR11","doi-asserted-by":"crossref","unstructured":"Rios, R., Narain, D. A., Huang, C. L. et al., A physical compact MOSFET model, including quantum mechanical effects, for statistical circuit design applications, IEDM95, 1995, 937.","DOI":"10.1109\/IEDM.1995.499370"},{"issue":"3","key":"BF02714568_CR12","doi-asserted-by":"publisher","first-page":"435","DOI":"10.1016\/0038-1101(94)90005-1","volume":"37","author":"M. J. van Dort","year":"1994","unstructured":"van Dort, M. J., Woerlee, P. H., Walker, A. j., A simple model for quantization effects in heavily-doped silicon MOSFET\u2019s at inversion conditions, Solid-state Electron., 1994, 37(3): 435.","journal-title":"Solid-state Electron."},{"issue":"7","key":"BF02714568_CR13","doi-asserted-by":"publisher","first-page":"1487","DOI":"10.1109\/16.701479","volume":"45","author":"S. A. Hareland","year":"1998","unstructured":"Hareland, S. A., Manassian, M., Shin, W. K. et al., Computational efficient models for quantization effects in MOS electron and hole accumulation layers, IEEE Trans. Electron Devices, 1998, 45(7): 1487.","journal-title":"IEEE Trans. Electron Devices"},{"issue":"5","key":"BF02714568_CR14","doi-asserted-by":"publisher","first-page":"1070","DOI":"10.1109\/16.760418","volume":"46","author":"Weidong Lin","year":"1999","unstructured":"Lin Weidong, Jin Xiaodong, King Yachin et al., An efficient and accurate compact model for thin-oxide-MOSEFT intrinsic capacitance considering the finite charge layer thickness, IEEE Trans. Electron Devices, 1999, 46(5): 1070.","journal-title":"IEEE Trans. Electron Devices"},{"issue":"3","key":"BF02714568_CR15","doi-asserted-by":"publisher","first-page":"401","DOI":"10.1016\/S0038-1101(99)00251-8","volume":"44","author":"Yutao Ma","year":"2000","unstructured":"Ma Yutao, Li Zhijian, Liu Litian et al., Effective density-of-states approach to QM correction in MOS structures, Solid-state Electronics, 2000, 44(3): 401.","journal-title":"Solid-state Electronics"},{"issue":"9","key":"BF02714568_CR16","doi-asserted-by":"publisher","first-page":"1764","DOI":"10.1109\/16.861589","volume":"47","author":"Yutao Ma","year":"2000","unstructured":"Ma Yutao, Liu Litian, Yu Zhiping et al., Validity and applicability of triangle potential well approximation in modeling of MOS structure inversion and accumulation layer, IEEE Trans. Electron Devices, 2000, 47(9): 1764.","journal-title":"IEEE Trans. Electron Devices"},{"key":"BF02714568_CR17","volume-title":"Operation and Modeling of the MOS Transistor","author":"Y. P. Tsividis","year":"1987","unstructured":"Tsividis, Y. P., Operation and Modeling of the MOS Transistor, New York: McGraw-Hill Inc., 1987."}],"container-title":["Science in China Series F Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/BF02714568.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/BF02714568\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/BF02714568.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,9,26]],"date-time":"2024-09-26T05:13:28Z","timestamp":1727327608000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/BF02714568"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2001,6]]},"references-count":17,"journal-issue":{"issue":"3","published-print":{"date-parts":[[2001,6]]}},"alternative-id":["BF02714568"],"URL":"https:\/\/doi.org\/10.1007\/bf02714568","relation":{},"ISSN":["1009-2757","1862-2836"],"issn-type":[{"type":"print","value":"1009-2757"},{"type":"electronic","value":"1862-2836"}],"subject":[],"published":{"date-parts":[[2001,6]]}}}