Rachel Frazier

University of Alabama - Tuscaloosa, Office for Research, Department Member

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Nassim Tahouni

University of Tehran

Ajay Mandal

Indian School of Mines, Dhanbad

Mihir Bhagat

Institute of Chemical Technology, Mumbai

Univ. of Technology

Universiti Malaya

University of Gujrat

University of New Hampshire

Mariangélica Domini

Vrije Universiteit Brussel

Vasiliki Polychniatou

National Technical University of Athens

Dr. Abdul-Sattar Nizami

Government College University, Lahore

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Papers by Rachel Frazier

Investigation of a GaMnN/GaN/InGaN structure for spin LED

Theoretical and experimental studies of GaMnN/GaN/InGaN structure for a spin LED device were perf... more Theoretical and experimental studies of GaMnN/GaN/InGaN structure for a spin LED device were performed. Strong electron spin relaxation was experimentally observed in a InGaN/GaN quantum well. It is shown that the strong spin relaxation might result from the built-in piezoelectric field in strained wurzite heterostructures. A five level k . p model was used for microscopic calculations of the structure inversion asymmetry induced spin-orbit interaction. The magnitude of this interaction is shown to be comparable with that in InGaAs/GaAs quantum structures.

Effect of Nucleation Layer on the Magnetic Properties of GaMnN

... These results suggest that the degradation of the magnetic behavior is due to defect interact... more

Spintronics device concepts

Iee Proceedings-circuits Devices and Systems, 2005

Spin-dependent phenomena in semiconductors may lead to devices with new or enhanced functionality... more Spin-dependent phenomena in semiconductors may lead to devices with new or enhanced functionality, such as polarised solid-state light sources (spin light-emitting diodes), novel microprocessors and sensitive biological and chemical sensors. The realisation of robust semiconductor spin-device technology requires the ability to control the injection, transport and detection of polarised carriers, and to manipulate their density by a field gating. The absence of Sibased or room-temperature dilute magnetic semiconductors has subdued the initial excitement over semiconductor spintronics, but recent reports demonstrate that progress is far from dormant. The authors give examples of a number of different spin-device concepts for polarised light emission, spin field-effect transistors) and nanowire sensors. It is important to re-examine some of the earlier concepts for spintronics devices, such as the spin field-effect transistor, to account for the presence of the strong magnetic field which has deleterious effects. In some of these cases, the spin device appears to have no advantage relative to the conventional charge-control electronic analogue. There have been demonstrations of device-type operation in structures based on GaMnAs and InMnAs at low temperatures. The most promising materials for room-temperature polarised light emission are thought to be GaN and ZnO, but results to date on realising such devices have been disappointing. The short spin-relaxation time observed in GaN/InGaN heterostructures probably results from the Rashba effect. Possible solutions involve either cubic phase nitrides or the use of additional stressor layers to create a larger spin-splitting, to get polarised light emission from these structures, or to look at alternative semiconductors and fresh device approaches.

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Optical study of spin injection dynamics in InGaN∕GaN quantum wells with GaMnN injection layers

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004

The spin injection dynamics of multiquantum well (MQW) light emitting diodes (LEDs) grown by mole... more

Effect of Oxygen Co-Doping on the Electronic and Magnetic Properties of Ga[sub (1−x)]Mn[sub x]N

Electrochemical and Solid State Letters, 2005